Topic
Gate driver
About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.
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15 Mar 2015
TL;DR: In this paper, the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on is measured, which is proportional to the peak gate current and fluctuates with temperature due to the temperature dependent resistance of the internal gate resistance.
Abstract: A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.
30 citations
TL;DR: In this article, a low-leakage gate driver circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix liquid crystal display (AMLCD) applications is presented.
Abstract: This paper presents a new low-leakage gate driver circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix liquid crystal display (AMLCD) applications. The pull-down TFTs are turned OFF to maintain the high driving capability of the proposed circuit. Four phase clock signals with a duty ratio of 33% are utilized to turn ON the pull-down TFTs in advance to improve the stability of the row line at ${V}_{L}$ . The electrical characteristics of a fabricated a-Si:H TFT are measured to establish the model for HSPICE simulation to elucidate the effect of charge loss on the proposed circuit. Measurements confirm that the output waveforms of the proposed gate driver circuit remain identical to the initial waveforms and can be stabilized at ${V}_{L}$ at 85 °C over 720 h, ensuring the feasibility of the use of the proposed gate driver circuit in AMLCDs.
30 citations
TL;DR: In this article, a Josephson logic gate with a closed loop with four Josephson junctions (4JL gate) and its operating characteristics are described. But this is not the case for all 4JL gates with a minimum line width of 5 µm.
Abstract: A Josephson logic gate which consists of a closed loop with four Josephson junctions (4JL gate) and its operating characteristics are described. Devices have been fabricated using Pb-alloy technology with a minimum line-width of 5 µm. Gate operations with a current gain of 2 have been performed under complete input/output current isolation. A logic delay of 20 ps per gate has been measured in a chain of ten OR-gates for a fan-out of 1 with an average power dissipation of 3.7 µW.
30 citations
20 Jun 2004
TL;DR: The paper particularly details the progresses made for near future options related to the IGBT chip technology, including a ' reverse-conducting type' and a 'reverse-blocking type' device concepts, and prospects of silicon carbide based power semiconductors for far future power conversion applications.
Abstract: A brief history of power semiconductor devices, starting from its bipolar based origin to the present day IGBT Modules and intelligent power modules (IPMs), has been reviewed in the beginning of this paper. The review is then followed by an analysis of the changing requirements from the application fields and a projection of future growth for power semiconductors to comply with such needs. The paper particularly details the progresses made for near future options related to the IGBT chip technology, including a 'reverse-conducting type' and a 'reverse-blocking type' device concepts, and prospects of silicon carbide based power semiconductors for far future power conversion applications.
30 citations
TL;DR: In this article, the feasibility and effectiveness of implementing resonant gate drivers in widebandgap semiconductor transistors is discussed according to a detailed comparison of loss decomposition, and a case study of two representative gate driver topologies is given.
Abstract: The increasing transistor power loss brought by the high switching frequency places a limit to the future high power density converter design. A review of resonant gate drivers is given in this paper to provide a vision for its future application. Various resonant gate driver topologies from the prior-art research is categorized and thoroughly compared in terms of the implementation frequency and the percentage gate driver loss reduction. Moreover, a case study of two representative resonant gate driver topologies is given. The conventional gate drive and two resonant gate drivers are implemented to driver Silicon MOSFETs and Gallium Nitride transistors, respectively. The feasibility and effectiveness of implementing resonant gate drivers in wide-bandgap semiconductor transistors is discussed according to a detailed comparison of loss decomposition.
30 citations