Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

Junction Temperature Measurement during Inverter Operation using a TJ-IGBT-Driver

Abstract: The junction temperature of an IGBT power module is a key parameter for its optimal operation and reliability. In recent years different sensor systems were presented for real-time TJmeasurement, but none of these solutions could prove its functionality during the real inverter operation. For the first time this paper presents an IGBT gate driver with integrated real-time TJ-measurement and investigates its properties within a working voltage source inverter. The measurement is based on the on-chip internal gate resistor RGi, whose temperature is determined by superimposing the negative gate voltage with a high-frequency identification signal. Therefore the driver consists of a small control unit that manages the entire identification process during the regular switching operation of the IGBT and calculates its junction temperature using a pre-programmed reference sensor curve. Within an automatic one-point calibration at room temperature a certain power modules can be adjusted to this sensor curve. To demonstrate the functionality of the TJ-measurement during inverter operation the driver is integrated into one phase of a voltage source inverter. The junction temperature variations that can be measured at low-frequency phase currents and during the emulation of different load-profiles show very good agreement with the temperature that is measured with an IRcamera. Thereby the so-called TJ-IGBT-Driver offers a very good temperature and time resolution of 1 K and 2.5 ms. In summary, this paper shows a working sensor system that allows real-time junction temperature measurement of conventional IGBT power modules with very good sensor properties and in a way that is suitable for series production.

Transistor structure for use in erasable and programmable semiconductor memory devices

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate and an additional program gate in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to a high voltage onto the floating gate during programming so as to produce hot-electron injection at the split point in the channel region between the control gate and the floating gate. Submicrosecond programming at a 5 V drain voltage can thereby be achieved.

600V SOI Gate Driver IC with advanced level shifter concepts for medium and high power applications

Abstract: An advanced level shifter topology allows any desired reference voltage drop between the primary side and the secondary sides of a high voltage IC (HVIC), including negative voltages caused by parasitic elements. This makes the HVICs suitable for medium and high power applications. For integration into latch-up free SOI technology the advanced level shifter topology is preferable. The capabilities of the level shifters are demonstrated in an experimental 7-channel 600V gate driver IC. It is demonstrated that the circuit remains operational for negative reference voltages down to -45V (bottom channel) and -20V (top channel) respectively.

LCD and drive method thereof

Abstract: A liquid crystal display device includes a liquid crystal panel, gate and data drivers providing the liquid crystal panel with gate and data signals, and a timing controller receiving input signals that include an image signal, a sync signal, a data enable signal and a clock signal, wherein the timing controller includes a gate control signal generator controlling the gate driver, a data control signal generator controlling the data driver, a data processor supplying the image signal to the data driver, and a vertical enable signal generator generating a vertical enable signal according to the data enable signal and controlling the gate control signal generator and the data control signal generator.

High performance gate drives for utilizing the IGBT in the active region

Abstract: The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed.