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Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a photonic power converter (PPC) was applied to power a 650-V SiC mosfet gate driver requiring high galvanic isolation, demonstrating a 20dB reduction in conducted-current EMI from the power circuit into the low-voltage control systems.
Abstract: Photonic power converters (PPCs) are a class of photovoltaic devices designed for efficient conversion of monochromatic (laser or LED) light to electricity. These devices are composed of multiple p-n junction diodes arranged in a tandem configuration and connected in series. They have reached high energy conversion efficiencies (70%) and areal power densities of 100 W/cm $^2$ . When these devices are illuminated with a high-efficiency diode laser, they can provide isolated dc–dc conversion from the laser voltage ( $^{3}$ , compared with 1.5 W/cm $^{3}$ for the reference. Relative to switch-mode power conversion, the photonic technology has lower efficiency and lower power density, but superior isolation and rejection of ripple and EMI. Both technologies are highly scalable. For the second application, the same unit is applied to power a 650-V SiC mosfet gate driver requiring high galvanic isolation, demonstrating a 20 dB reduction in conducted-current EMI from the power circuit into the low-voltage control systems.

25 citations

Patent
17 Oct 1989
TL;DR: In this article, a closed loop bipolar transistor driver is coupled to an open loop MOSFET output stage to produce a desirable vacuum tube-like sound characterized by warm, even harmonics.
Abstract: A closed loop bipolar transistor driver is coupled to an open loop MOSFET output stage. The closed loop driver amplifier operates within a higher voltage range than the open loop MOSFET output amplifier. The closed loop driver stage is capable of driving the MOSFET output stage into saturation and the MOSFET output stage thereby produces a desirable vacuum tube-like sound characterized by warm, even harmonics. Feedback is used to maintain the closed loop driver circuit in a linear operating regime thereby preventing undesirable hard clipping associated with bipolar transistors when they are overdriven.

25 citations

Patent
11 Nov 1980
TL;DR: In this article, the authors proposed cross-coupled flip-flops with a driver and a complementary driver or load connected in series in each of the circuits, one driver or complementary driver being a floating gate transistor such as a FATMOS.
Abstract: Memory circuits having a floating gate transistor as a non-volatile storage element are constructed with a shunt transistor across the floating-gate transistor which in the event of a short circuit between the floating gate and the transistor substrate causes the memory to go into a predetermined fail-safe condition. The circuits are cross-coupled flip-flops with a driver and a complementary driver or load connected in series in each of the circuits, one driver or complementary driver or load being a floating gate transistor such as a FATMOS. Short circuiting of the floating gate to the control gate of the floating-gate transistor gives the same fail-safe condition.

25 citations

Patent
03 Mar 2005
TL;DR: In this article, the authors compare the gray scale levels of source driver output of two lines and adjust the pre-charge period of a pre-charged line by adjusting a pulse width of a gate driver output.
Abstract: Data (gray scale levels of source driver output) of two lines are compared between an actually charged line and a pre-charged line for which actual charging and pre-charging are carried out, respectively, during the same horizontal period. Based on the result of comparison, a pre-charged period of the pre-charged line is adjusted by adjusting a pulse width of a gate driver output. In this way, the pre-charge period is reduced and thereby overcharge is avoided in pixels which are likely to be overcharged by the pre-charging.

25 citations

Proceedings ArticleDOI
04 Aug 2002
TL;DR: A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35/spl mu/m CMOS technology and can be integrated for class 1 Bluetooth application.
Abstract: A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35/spl mu/m CMOS technology. A common-gate Class E power amplifier is employed. A common-gate switch is suitable for low supply voltage operation without degrading the PAE. A pre-amplifier with positive feedback configuration is used to drive the common-gate output stage. The amplifier delivers 18dBm output power with 33% power-added efficiency (PAE) under a 1V supply voltage. With a 1.2V supply, the amplifier delivers 20dBm output power with 35% PAE and can be integrated for class 1 Bluetooth application.

25 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202351
202297
2021235
2020372
2019425
2018449