Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

Dynamic gate drive voltage adjustment

Abstract: A DC-DC buck converter comprises a high-side power FET having a current path connected in series between an input terminal and an inductor connected to an output terminal supplying an output current to a load. The converter further comprises a low-side power FET having a current path connected between a reference terminal and an interconnection node of the high-side power FET with the inductor. The converter has a pulse width modulation controller receiving a feedback signal from the output terminal and providing pulse width modulated signals, and a gate driver circuit that receives the pulse width modulated signals from the pulse width modulation controller and applies pulse width modulated drive signals to the gates of the power FETs. The gate driver circuit supplies the drive signals to the gates of the power FETs at a variable voltage level adjusted in response to at least the output current, minimizing the power dissipation of the gate driver circuit.

Sound-responsive light

Abstract: A sound-responsive light illuminated by an audio-actuated serially connected switch. The audio-actuated switch includes a thyristor, preferably an SCR, the gate of which is triggered by an audio frequency signal from a microphone and audio amplifier. The amplifier is a class A audio amplifier with biasing and loading provided so that the light will be illuminated by sound above a selected level. A nonlinear potentiometer is used for the load impedance of one of the amplifier stages to permit selection of the desired audio level which triggers the thyristor. The input terminals of a rectified power supply are connected across the principal terminals of the SCR so that the parallel combination may be connected in series with the electric light and an alternating current power source. Coupling is provided from the output of the audio amplifier to the gate of the thyristor by means of a series capacitor and a shunt gate resistor of approximately 1000 ohms.

Gate driver structure of TFT-LCD display

Abstract: A gate driver structure of TFT-LCD display, comprising: a plurality of first level shifters, each input terminal of which being connected with an input signal; a plurality of output buffers with a plurality of output terminals, each input terminal of the output buffers being connected with each output terminal of the first level shifters; a second level shifter, the input terminal of which being connected with a low voltage signal and the first output terminal of which being connected with a plurality of first level shifters. In addition, the connecting wires between each output terminal of the plurality of first level shifters and each input terminal of the plurality of output buffers are in parallel with a pair of first MOS and second MOS daisy-chained together. The gate of each first MOS is connected with the output terminal of output buffer of the previous cell, and the gate of each second MOS is connected with the second output terminal of the second level shifter.

High threshold voltage p-GaN gate power devices on 200 mm Si

Abstract: In this paper, we present high threshold voltage, low on-resistance, and high speed GaN-HEMT devices using a p-GaN layer in the gate stack. There are three novel features - first, for the first time, p-GaN gate HEMTs were fabricated on a 200-mm GaN on Si substrate using a Au-free fully CMOS-compatible process. Second, good electrical characteristics, including a threshold voltage of higher than 2.8 V, a low gate leakage current, no hysteresis, and fast switching, were obtained by employing a p-GaN and W gate stack. Finally, TO-220 packaged p-GaN gate HEMT devices, which can sustain a gate bias of up to 20 V, were demonstrated. Such properties indicate that our p-GaN HEMT devices are compatible with the conventional gate drivers for Si power devices.

An online V ce measurement and temperature estimation method for high power IGBT module in normal PWM operation

Abstract: An on-state collector-emitter voltage (V ce ) measurement and thereby an estimation of average temperature in space for high power IGBT module is presented while power converter is in operation. The proposed measurement circuit is able to measure both high and low side IGBT and anti parallel diode voltages for a half bridge module which are also used to monitor the electrical degradation of the module. The V ce load current is proposed to estimate the variation of average temperature in space at every fundamental cycle of sinusoidal loading current. Initially, the calibration of voltage and junction temperature for load current level is presented and a trend of change in calibration factor for the IGBT is presented. Finally, the variation in temperature for sinusoidal variation of current is presented at initial stage and after an ageing of the IGBT. The measurement technique is simple and easy to implement into a gate driver for field applications.