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Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.


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Patent
Peter Dr. Hille1
29 Jan 1998
TL;DR: In this paper, the authors propose an overload protection of a switch to which a load circuit and a control circuit are connected, wherein the control circuit includes at least one logic circuit, a gate drive connected between an output of the logic circuit and the control input of the switch, a comparator, and a temperature sensor.
Abstract: An arrangement for overload protection of a switch to which a load circuit and a control circuit are connected, wherein: the control circuit includes at least one logic circuit, a gate drive connected between an output of the logic circuit and a control input of the switch, a comparator, and a temperature sensor. The comparator compares a voltage drop across the switch to a predetermined threshold value, and the temperature sensor is a discrete component relative to at least the switch and has an associated threshold-value recognition. The logic circuit is responsive to the output of the comparator and the temperature sensor to cause the gate driver to switch off the switch when at least one limit value for the voltage drop across the switch, or a limit value for the permissible switch temperature, is exceeded. Moreover, the temperature sensor has its temperature-measurement point on an external electrical connection of the switch, with this electrical connection simultaneously serving for the thermal coupling of the temperature sensor and the switch.

24 citations

Patent
02 Jan 2009
TL;DR: In this article, a half-bridge LLC resonant converter with self-driven synchronous rectifiers is presented, which utilizes a primary IC controller and a gate driver to drive the SRS rectifiers.
Abstract: The present invention discloses a half-bridge LLC resonant converter with self-driven synchronous rectifiers, which utilizes a primary IC controller and a gate driver to drive the secondary synchronous rectifiers. In correspondence with the gate drive output voltages of the primary IC controller to the primary switch transistors, the gate driver for the secondary synchronous rectifiers comprises a differential transformer if the primary IC controller outputs two ground-referenced gate drive voltages, which cannot directly drive the primary switch transistors but can be imposed on the differential transformer; or comprises a DC shifter, a DC restorer and a differential transformer if the primary IC controller outputs two gate-source voltages, which can directly drive the primary switch transistors but cannot be imposed on the differential transformer. The drive voltages of the primary switch transistors are unipolar; however the drive voltage of the secondary synchronous rectifiers can be bipolar or unipolar. Under the valid operation mode, this converter can decrease the rectifier conduction losses to increase the power converter efficiency.

24 citations

Patent
20 Nov 2002
TL;DR: In this article, a multi-chip module semiconductor device with a flip-chip IC is shown to have low impedance circuit connections provided by the bump electrodes (31, 32) and strap connections (181,182).
Abstract: In a multi-chip module semiconductor device (1), at least one first semiconductor die (20) is mounted on the base portion (11) of a lead-frame (10). A flip chip IC die (30) is mounted by first bump electrodes (31) to electrode contacts (G, S() on the at least one first die (20) and by second bump electrodes (32) to terminal pins (14) of the lead frame. The integrated circuit of the flip chip (30) does not require any lead-frame base-portion area for mounting, and low impedance circuit connections are provided by the bump electrodes (31, 32). The first die (20) may be a MOSFET power switching transistor, with a gate driver circuit in the flip chip (30). The circuit impedance for the switching transistor may be further reduced by having distributed parallel gate connections (G), which may alternate with distributed parallel source connections (S(), and furthermore by having distributed and alternating power supply connections (VCC, GND). The module may comprise two series connected transistors (201, 202) and a control circuit flip chip (300), with bump electrodes (31, 32) and strap connections (181,182) for providing a dc-dc converter without any wire bonds.

24 citations

Patent
30 Aug 1988
TL;DR: In this paper, an output driver circuit is described which can be programmed by the user into tri-state or open-collector configurations, depending on the needs of the user.
Abstract: An output driver circuit is described which can be programmed by the user into tri-state or open-collector configurations, depending on the needs of the user The driver circuit comprises a pair of a first pull-up and a pull-down FET transistor The source of the pull-up transistor and drain of the pull-down transistor are both connected to the output of the driver The gates of the pair of transistors are controlled by an input signal and its complement The driver further includes a second pull-up FET whose source is connected to the output of the driver The channel width to channel length ratio of the second pull-up transistor is at least about an order of magnitude greater than that of the first pull-up transistor The driver further includes a control means responsive to the input signal for applying a second signal to the gate of the second pull-up transistor for programming the driver into tri-state or open-collector modes The driver circuit may be controlled by the output of an OR gate in an AND-OR array in a FPLA or PAL device The driver is programmable by programming the AND gate or OR gate array and applying selected input signals to the AND gate array; the driver can also be programmed permanently into the tri-state or open-collector mode

24 citations

Journal ArticleDOI
TL;DR: In this paper, a hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver on array with low-level holding TFTs biased under bipolar pulse is investigated.
Abstract: A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver on array with low-level holding TFTs (LLH TFTs) biased under bipolar pulse is investigated. It is shown that the bipolar bias at low frequency significantly alleviates the threshold voltage shift of the LLH TFTs. As a result, the lifetime of the proposed gate driver is demonstrated to be several times of that under the conventional unipolar pulse bias. In addition, the improvement in the lifetime becomes more significant at the higher work temperature. The liquid crystal display television panels (32-in, $1366\times \textrm {RGB}\times 768$ ) with the proposed a-Si:H gate drivers integrated on array are manufactured, and the feasibility of the proposed driving scheme is well verified.

24 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202351
202297
2021235
2020372
2019425
2018449