Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

Electrowetting display device

Abstract: An electrowetting display device including a display panel that includes a display area in which a plurality of pixels is partitioned by a partition wall and a non-display area, a data driver that applies data voltages to the pixels through a plurality of data lines, and a gate driver disposed in the non-display area to apply gate signals to the pixels through a plurality of gate lines. The pixels receive the data voltages in response to the gate signals and display gray scales corresponding to the data voltages, and the partition wall is extended in the non-display area to cover the gate driver.

Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters

Abstract: The 4H-SiC n-IGBT is a promising power semiconductor device for medium voltage power conversion. Currently, Cree has successfully built 15 kV n-IGBTs. These IGBTs are pivotal for the smart grid power conversion systems and medium voltage drives. The need for complex multi-level topologies or series connected devices can be eliminated, while achieving reduced power loss, by using the SiC IGBT. In this paper, characteristics of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest switching characterization voltage ever reported on a single power semiconductor device. The paper includes static characteristics up to 25 A (forward) and 12 kV (blocking). The dependency of the power loss with voltage, current and temperature are provided. In addition, the basic converter design considerations using this ultrahigh voltage IGBT for high power conversion applications are presented. Also, a comparative evaluation is reported with an IGBT with thicker field-stop buffer layer as a means to show flexibility in choosing the IGBT design parameters based on the power converter frequency and power rating specification. Finally, power loss comparison of the IGBTs and MOSFET is provided to consummate the results for a complete reference.

Discharging apparatus for liquid crystal display

Abstract: A discharging apparatus for a liquid crystal display is provided for substantially reducing a residual image upon power-off. In the apparatus, a gate driver integrated circuit selectively applies first and second gate voltages to gate lines of the display. A discharge circuit is coupled to the gate driver integrated circuit and senses a power-off state of a power supply line. When a power-off state is sensed, a short-circuit if formed between the first gate voltage supply line and the second gate voltage supply line, thereby discharging voltages on the gate lines. Accordingly, a gate low voltage relative gate high (pixel turn-on) voltage is discharged upon power-off to define a discharge path via the gate line, thereby rapidly discharging electric charges charged in the liquid crystal display panel.

An Innovative Scheme of Symmetric Multilevel Voltage Source Inverter With Lower Number of Circuit Devices

Abstract: In this paper, an advanced configuration for a symmetric multilevel voltage source inverter is proposed. The authority of the proposed inverter versus the conventional cascaded H-bridge inverter and those most recently introduced is verified with provided comparisons. The proposed inverter is able to generate the desired voltage levels using a lower number of circuit devices, including power semiconductor switches and related gate driver circuits of switches. As a result, the total cost is considerably reduced, and the control scheme gets simpler. Moreover, the reduced amount of on-state switches in the suggested configuration decreases voltage drops. Furthermore, power losses are diminished. The given simulation results confirm the feasibility of the proposed configuration. To approve the practicability of the proposed inverter, a prototype of the proposed topology has been implemented. Finally, simulation and experimental results are compared, and the provided comparison shows that the obtained results are in good agreement.

Gate driver design for 1.7kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection

Abstract: This paper shows a gate driver design for 1.7 kV SiC MOSFET module as well a Rogowski-coil based current sensor for effective shortcircuit protection. The design begins with the power architecture selection for better common-mode noise immunity as the driver is subjected to high dv/dt due to the very high switching speed of the SiC MOSFET modules. The selection of the most appropriate gate driver IC is made to ensure the best performance and full functionalities of the driver, followed by the circuitry designs of paralleled external current booster, Soft Turn-Off, and Miller Clamp. In addition to desaturation, a high bandwidth PCB-based Rogowski current sensor is proposed to serve as a more effective method for the shortcircuit protection for the high-cost SiC MOSFET modules.