Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

DC stabilized power supply

Abstract: A switching signal generator for a switching power supply employing a DC-DC modulator has an adder, an integrator and a quantizer. A gate driver circuit is provided upstream of a power switch element and receives a quantizer output. By feeding back a gate driver circuit output to the adder of the ΔΣ-modulator, a large phase margin is obtained at a high-frequency switching. The switching signal generator for the ΔΣ-modulation type switching power supply has an improved direct-current transmission linearity characteristic relative to direct-current input, and that is stably controllable and of high efficiency. Furthermore, a DC-DC converter has an adder, an integrator and a quantizer, the integrator having a mechanism for adjusting its gain. The gain-adjusting mechanism receives a signal from a current flowing internally of the DC-DC converter, a voltage internally of the converter, or a converter output voltage to control gain of the integrator so that the amplitude of output voltage of the integrator is not saturated and a comparator is capable of high-speed operation, a ΔΣ-modulation type DC-DC converter is provided that is unlikely to undergo oscillation especially at a high sampling frequency, and that produces a stable output voltage.

Design and hardware implementation of Gen-1 silicon based solid state transformer

Abstract: This paper presents the design and hardware implementation and testing of 20kVA Gen-1 silicon based solid state transformer (SST), the high input voltage and high voltage isolation requirement are two major concerns for the SST design. So a 6.5kV 25A dual IGBT module has been customized packaged specially for this high voltage low current application, and an optically coupled high voltage sensor and IGBT gate driver has been designed in order to fulfill the high voltage isolation requirement. This paper also discusses the auxiliary power supply structure and thermal management for the SST power stage.

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Abstract: In this paper, a new series connection topology is introduced for silicon carbide (SiC) MOSFETs. In the topology, with a single external gate drive, three series-connected SiC MOSFETs are synchronously driven. The operating principle of the proposed topology is analyzed and presented. In order to improve the current capability of the module, parallel connection of two SiC devices are also demonstrated. A 3600 V/80 A series-parallel-connected configuration with three rows in a series and two branches in parallel is constructed with six 1200 V/40 A discrete SiC MOSFETs. Switching behavior of the configuration is completed at 2300 V/78 A. Experimental results verify the validity and feasibility of the proposed topology. Analysis based on experimental results for the circuit switching speed and switching losses is given. Finally, such a series-parallel-connected circuit is integrated in a SiC MOSFETs module, capable of 3600 V/80 A. The switching characteristics of the module are compared to the discrete configuration.

Switching regulator circuit, system, and method for providing input current measurement without a dedicated input current sense element

Abstract: A synchronous regulator includes a controller coupled to receive a reference signal and a feedback signal from the regulator operable to provide a pulse width modulation (PWM) signal at its output. The regulator includes at least one gate driver coupled to receive the PWM signal, and a synchronous output switch having a phase node there between controlled by the gate driver, and regulator input current measurement circuitry. The regulator input current measurement circuitry comprises a circuit operable for providing a signal representative of at least one phase node timing parameter, a sensing circuit operable for sensing inductor or output current provided by the regulator, and a calculation circuit coupled to receive the signal representative of the phase node timing parameters and the inductor or output current and is operable to determine the input current.

Circuit module with hot-swap control circuitry

Abstract: A circuit board capable of live-insertion or hot-swapping into a live chassis backplane. The circuit board is provided with a power control circuitry for gracefully ramping up board power after insertion, or gracefully removing power just prior to physical removal of a circuit board from the board slot. A pair of ejector levers are provided on each side of the circuit board. A push button switch is provided proximate one ear thereof and is selectively opened or closed depending upon the position of an ejector cover which can be secured thereover in an interlocking relationship. Upon retraction of the extractor cover, the switch is opened, and the converse applies. Power MOSFETs are provided between the card edge and the board power busses which are gracefully turned on and off as a function of the switch position. A high-side gate driver provides an increased bias voltage, which bias voltage is communicated through the closed switch to the gates of the MOSFETs. An RC network is coupled to the MOSFET gate to determine the time constant at which bias voltage will be ramped up or ramped down to correspondingly ramp power up or down to the circuit board power busses. A power supply monitor circuit is also provided for automatically resetting the board upon a power up condition.