Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

Parasitic Inductance and Capacitance-Assisted Active Gate Driving Technique to Minimize Switching Loss of SiC MOSFET

Abstract: High di/dt and dv/dt of SiC MOSFET cause a considerable amount of overshoot in device voltage and current during switching transients in the presence of inverter layout parasitic inductance and load parasitic capacitance. The excessive overshoots in device voltage and current cause failure of the device. Moreover, these uncontrolled overshoots increase the switching loss in the inverter. It is difficult to reduce parasitic inductance beyond a certain point. This paper proposes an active gate driving technique, which allows inverter to operate with moderate amount of layout parasitic inductance and load parasitic capacitance. The proposed technique dramatically reduces switching loss of the SiC MOSFET with the help of existing parasitic elements. The proposed switching loss reduction technique is termed as quasi zero switching . The developed active gate driver has been tested in a double pulse test setup and a 10 kW two-level voltage source inverter driving an induction motor.

Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module

Abstract: The relationship between bonding wire liftoff and terminal voltage in insulated gate bipolar transistor (IGBT) power module is studied. Bonding wire liftoff failure is one of the most dominant limiting factors to the reliability behavior of IGBT power module. In this paper, in order to monitor this type of fault, the effects of the typical degradations are considered. The parasitic inductance and gate equivalent capacitance of IGBT module change due to bonding wire liftoff, which have different impacts on the external characteristics. So, two aspects of IGBT module terminal characteristics are investigated to identify any measurable signature used for monitoring bond wire liftoff failures: 1) gate-emitter voltage during turn-on process and 2) collector-emitter voltage during turn-off process. This paper aims to provide useful information for further development in monitoring the health of IGBT module.

Adaptive Multi-Level Active Gate Drivers for SiC Power Devices

Abstract: State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses. High switching speed is preferred for achieving low switching loss, yet high dv/dt and di/dt can result in high EMI emission during switching transients. These switching dynamics can be controlled by the device gate driving strategy. The multi-level active gate driver (AGD) approach is able to tradeoff the switching losses with the dv/dt and di/dt for each switching transient. A novel three-level (3-L) AGD for SiC power mosfet trajectory control is introduced. Its turn-off profile has a shorter turn-off delay compared to any existing methodology. Accordingly, a comprehensive datasheet-driven trajectory model for the online model-based optimization of the 3-L turn-off is introduced. The main factors that impact the 3-L turn-off performance are analyzed with this model. The experimental results of double pulse tests validate the approach. Additionally, the benefits of the proposed 3-L AGD method over two-stage turn-off and conventional gate drivers on the market are illustrated through experiments.

Display driving device and display device, and driving control method thereof

Abstract: PROBLEM TO BE SOLVED: To provide a light emission driving device achieving a light emission operation with proper luminance gradations corresponding to display data by suppressing the scatter of light emission characteristics of display pixels due to the changes of external environment and secular changes, and to provide a display device capable of excellently displaying image information and a driving control method thereof. SOLUTION: The display device is provided with a display panel 110A where a plurality of display pixels equipped with organic EL elements OEL are arrayed in a matrix form; a gate driver 120 which applies a progressive scan signal Vsel to scanning lines SL; a data driver 130 which supplies a gradation signal voltage Vdata corresponding to display data to data lines DL; a correction control circuit 140A which measures light emission characteristics of the organic EL elements OEL of the respective display pixels to correct display data; and a system controller 150 which outputs various control signals for controlling the operations of the gate driver 120 and data driver 130, and correction control circuit 140A. COPYRIGHT: (C)2005,JPO&NCIPI

Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters

Abstract: This paper compares hard-driven gate-turn-off thyristors (IGCTs) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter. The structure, fundamental operation and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14 MVA inverter at switching frequencies of f/sub s/=250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications.