Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

Abstract: By a vertical shrink of the NPT IGBT to a structure with a thin n/sup -/ base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses.

Self-adjusting impedance matching driver

Abstract: A self-adjusting impedance matching driver for a digital circuit. The driver has both a pull-up gate to VDD and a pull-down gate to ground. An array of gates is provided in parallel with each of the pull-up gate and the pull-down gate, with any one or more of such gates being selectively enabled in response to circuit means that monitors the impedance match between the output of the driver and the network it drives. By enabling selectively such gates, any impedance mismatch can be minimized. The selective enablement may be done only at power up, and thereafter only if the driven network is changed substantially.

Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors

Abstract: As the characteristics of insulted gate transistors [like metal–oxide–semiconductor field-effect transistors and insulated gate bipolar transistors (IGBTs)] have been constantly improving, their utilization in power converters operating at higher and higher frequencies has become more common. However, this, in turn, leads to fast current and voltage transitions that generate large amounts of electromagnetic interferences over wide frequency ranges. In this paper, a new active gate voltage control (AGVC) method is presented. It allows us to control the values of at turn-on and at turn-off for insulated gate power transistors, by acting directly on the input gate voltage shape. In an elementary switching cell, it enables us to strongly reduce over-current generated by the reverse recovery of the free-wheeling diode at turn-on, and oscillations of the output voltage across the transistor at turn-off. In the following sections, the AGVC in open and closed-loop for IGBT is presented, and its performance is compared with that of a more conventional method, i.e., increasing the gate resistance. Robustness of the AGVC is estimated under variations of dc-voltage supply and transistor switched current.

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

Abstract: A new three-terminal power device, called the insulated gate transistor (IGT), with voltage-controlled output characteristics is described. In this device, the best features of the existing families of bipolar devices and power MOSFET's are combined to achieve optimal device characteristics for low-frequency power-control applications. Devices with 600-V blocking capability fabricated using a vertical DMOS process exhibit 20 times the conduction current density of an equivalent power MOSFET and five times that of an equivalent bipolar transistor operating at a current gain of 10. Typical gate turn-off times have been measured to range from 10 to 50 µs.

A review of IGBT models

Abstract: In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed.