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Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.


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Patent
21 Sep 2011
TL;DR: In this article, a liquid crystal display (LCD) with an integrated touch screen panel includes a plurality of pixels connected to a multiplicity of data lines and gate lines, the gate lines being divided into groups, a common electrode driver configured to simultaneously supply a driving signal to common electrodes within each group of the plurality of groups of the common electrodes, and to sequentially supply the driving signals to the plurality groups of common electrodes.
Abstract: A liquid crystal display (LCD) with an integrated touch screen panel includes a plurality of pixels connected to a plurality of data lines and a plurality of gate lines, the gate lines being divided into a plurality of groups, a plurality of sensing electrodes, a plurality of common electrodes divided into a plurality of groups, a common electrode driver configured to simultaneously supply a driving signal to common electrodes within each group of the plurality of groups of the common electrodes, and to sequentially supply the driving signal to the plurality of groups of the common electrodes, and a gate driver configured to sequentially supply a gate signal to gate lines within each of the plurality of group of the gate lines

55 citations

Proceedings ArticleDOI
12 Oct 1998
TL;DR: In this article, experimental and simulation techniques are used to investigate the series connection of high voltage IGBT modules, and an experimental setup with a power rating of 6.6 kV and 1200 A is established and used to analyze the circuit behavior in detail.
Abstract: In this paper experimental and simulation techniques are used to investigate the series connection of high voltage IGBT modules. An experimental setup with a power rating of 6.6 kV and 1200 A is established and used to analyze the circuit behavior in detail. An improved gate driver circuit in combination with an active overvoltage control enables safe operation of the circuit under all conditions. Additionally, the circuit is simulated with the simulation tool SABER using physics-based electro-thermal models for the description of the power semiconductor devices in the circuit. Experimental and simulated data agree very well.

54 citations

Journal ArticleDOI
TL;DR: In this paper, the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions were investigated with the aid of extensive measurements and numerical simulations, and it was shown that hot-spot generation due to current crowding and impact ionization is the cause of breakdown of an IGBT under short circuit switching.
Abstract: This paper reports the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions. Short-circuit performance of IGBT's has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced two-dimensional (2-D) mixed device and circuit simulator that incorporates the self-heating mechanism has been employed to examine IGBT behavior under short-circuit stress. Latch-up free punchthrough IGBT has been examined. It is shown that hot-spot generation due to current crowding and impact ionization is the cause of breakdown of an IGBT under short-circuit switching.

54 citations

Patent
Won-Bong Youn1
17 Sep 2001
TL;DR: In this paper, a liquid crystal display (LCD) device, and an apparatus and method for driving the same, in which a timing controller has a multiframe inversion driving portion for modulating an REV signal that designates a polarity of a data voltage for switching the polarity on an LCD panel with respect to a common electrode voltage.
Abstract: Disclosed are a liquid crystal display (LCD) device, and an apparatus and method for driving the same, in which a timing controller has a multiframe inversion driving portion for modulating an REV signal that designates a polarity of a data voltage for switching the polarity of liquid crystals on an LCD panel with respect to a common electrode voltage, thereby generating a modulated REV signal; a gate driver generates a gate driving voltage; a data driver for generating a data driving voltage based on the modulated REV signal received from the timing controller; and an LCD panel repeats an inversion drive in a period of p frames based on the gate driving voltage and the data driving voltage, the inversion being shifted down by every line in a period of one frame according to a change in the frame. Consequently, the flickering caused from dot inversion and horizontal lines from 2×1 dot inversion while driving the LCD can be removed.

54 citations

Proceedings ArticleDOI
24 Oct 2005
TL;DR: This paper presents a novel IGBT gate drive method which is easily implemented within the IGB gate driver for the PWM voltage source converters, and is highly cost effective in the low cost, open loop voltage source Converters, since no current sensor is required.
Abstract: The IGBT switching dead time which prevents the DC link shoot-through of the voltage source converter causes problems such as the waveform distortion and the fundamental voltage loss of the converter output. To solve these problems, many dead-time compensation methods, most of which are implemented within the PWM controller and need the output current direction detection, were proposed. This paper presents a novel IGBT gate drive method which is easily implemented within the IGBT gate driver for the PWM voltage source converters. Using this method, the gate drivers of the upper and the lower IGBT's within a converter phase leg can receive the ideal complimentary (without dead-time) PWM signals, and will not cause the DC link shoot through problem. The gate driver keeps the IGBT off if its anti-parallel diode is conducting current. This novel IGBT gate driver works effectively at low current, low output frequency, and the zero current crossing. In these situations the conventional dead-time compensation often meets problems since the current direction detection will become increasingly difficult, leading to erroneous compensation and waveform distortion. Additionally, the proposed IGBT gate driver is highly cost effective in the low cost, open loop voltage source converters, since no current sensor is required. In this paper, the principle of the proposed IGBT gate drive is described, and the simulation and experimental results validating the proposed method are presented.

54 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202351
202297
2021235
2020372
2019425
2018449