Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.

Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation

Abstract: Silicon-Carbide (SiC) MOSFETs, due to material properties, are designed with smaller thickness in the gate oxide and a higher electric field compared to Si MOSFETs. Consequently, the SiC MOSFETs have a worse reliability which causes higher leakage currents during instantaneous abnormal operating conditions. This paper investigates the reliability issues of the SiC MOSFET gate oxide under standard short-circuit test conditions. In this paper, 1200-V SiC MOSFETs are newly modeled, and also their short-circuit sustainability (tolerance) have been studied at different drain-source and gate-source voltages. A hardware tester circuit was designed and developed to test the devices under such extreme circuit conditions. Then, the gate reliability of SiC MOSFET devices have been compared to that of Si power devices of similar ratings. The results reveal a higher reduction in the instantaneous gate-source voltage of SiC MOSFETs compared to that of Si devices under the same operating conditions. The gate-voltage reduction phenomenon results from the higher leakage currents through the gate. Furthermore, it was found that the gate-source voltage reduction during the test depends on the gate structures. The gate voltage reduction of SiC MOSFETs with planar gate is higher than that of MOSFETs with shield planar gate. As the pulse duration increases in short-circuit tests, the leakage current in the gate-source of SiC devices increases. The results show that even though the SiC MOSFETs are very capable of processing long pulses and high power in the drain-source, the gate-source side is highly degraded by these pulses in the test. Moreover, whenever a small number of the short-circuit tests are applied, the gate structure of SiC MOSFETs becomes broken while the drain-source is still able to block the dc-link voltage. The paper concludes that the short-circuit reliability of the gate was found to be worse compared with commercial Si devices with similar rating.

Motor controller and electric tool using the same

Abstract: A motor controller comprises a processor selectively outputting an on-signal to either one of an upper arm switching element and a lower arm switching element based upon a detected position by the position sensor, gate drivers inputting a driving voltage to the gates of the switching elements by shifting a level of the on-signal from the processor to the upper arm switching element and a bootstrap capacitor configured to be charged while the upper arm switching element is turned off and to behave as a voltage supply for the gate driver while the upper arm switching element is turned on. The processor is configured to reduce a set duty ratio when the set duty ratio is equal to or larger than a predetermined value (e.g. 80 percents) and a rotational position of the motor does not change for a first predetermined time. This motor controller can prevent the switching element from a burnout even if the motor is locked.

Linearized power amplifier

Abstract: A linearized power amplifier is provided which comprises a non-linear radio frequency (RF) power amplifier, a linearization circuit such as a Cartesian Feedback circuit, an RF feedback circuit; an IF feedback circuit; or a feedforward circuit, and a dynamic bias modulation circuit for modulating an operating voltage of the amplifier. The dynamic bias modulation means includes an envelope determining circuit, signal processing circuits in which predetermined data or a simplified transfer function determined from measured characteristics of the amplifier is stored and used to produce power bias and/or base or gate bias signals, and driver circuits for modulating the power supply voltage and/or base or gate bias voltage of the RF amplifier in response to the bias signals. The dynamic bias modulation may be used with a BJT-based, and FET-based or any other type of RF power amplifier. With the right combination of power supply and base or gate bias modulation the efficiency of the RF amplifier can be maximised for a given output power, and the combination of linearization means and high level power supply and/or base or gate bias modulation gives the benefits of improved spectral control and intermodulation distortion reduction coupled with high efficiency.

Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Abstract: Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on polyimide/polyethylene-terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19 cm2/V·s and a gate voltage swing of ~0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 μs. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.

Liquid crystal display device and method for driving the same

Abstract: A liquid crystal display device and method for driving the same is described for reducing a compensating deviation of a common voltage. The liquid crystal display device includes a liquid crystal display panel; a data driver for driving data lines of the liquid crystal display panel; a gate driver for driving gate lines of the liquid crystal display panel; and a common voltage compensating unit for generating a plurality of compensating signals for compensating respective distortions of common voltages at a plurality of common regions of a common electrode of the liquid crystal display panel by using common voltages fed back from the common regions, and supplying compensating signals corresponding to each of the plurality of common regions.