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Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.


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Patent
28 Dec 2009
TL;DR: In this article, a liquid crystal display includes a gate driver, a control circuit and a charge-sharing circuit, and the gate driver outputs a first gate driving signal and a second gate-driving signal respectively at the first and the second output end according to the third or the fourth clock signal.
Abstract: A liquid crystal display includes a gate driver, a control circuit and a charge-sharing circuit. The control circuit provides a charge-sharing signal according to the parasitic capacitances at a first output end and a second output end in the gate driver. The charge-sharing circuit generates a third clock signal and a fourth clock signal by performing charge-sharing on a first clock signal and a second clock signal according to the charge-sharing signal. The third clock signal includes a signal falling edge which descends from a high level to a first level, and the fourth clock signal includes a signal falling edge which descends from the high level to a second level. The gate driver outputs a first gate driving signal and a second gate driving signal respectively at the first and the second output end according the third or the fourth clock signal.

48 citations

Proceedings ArticleDOI
01 Nov 2015
TL;DR: In this paper, an integrated SiC module with 1.2kV MOSFETs bare dies and two high current gate driver chips is integrated in a compact integrated module package to reduce the parasitic inductance.
Abstract: With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused by the fast switching is a major constrain for improving switching frequency. For this reason, an integrated SiC module with 1.2kV MOSFET and ultra-fast gate drive circuits is proposed and developed. Two 1.2kV SiC MOSFETs bare dies and two high current gate driver chips are integrated in a compact integrated module package to reduce the parasitic inductance. 0Ω gate resistor therefore can be used in this module to improve the device at maximum speed. Noise free operation of the tested module is verified even under extremely high dV/dt and dI/dt conditions. The ultra-low turn-off loss of the module is being demonstrated. Finally, the integrated module is demonstrated in two megahertz converters: an 800W 1.5MHz synchronous boost converter and a 3.38MHz half bridge inverter. The era for high voltage-megahertz switching has arrived.

48 citations

Patent
Heume Il Baek1
15 Dec 2005
TL;DR: In this article, an apparatus for driving a liquid crystal display (LCD) device with 4-color sub-pixels, including a data driver to provide video data signals to each sub-pixel, a gate driver and a data conversion part to generate a gain value by analyzing a ratio of an achromatic color signal to a chromatic colour signal.
Abstract: An apparatus for driving a liquid crystal display (LCD) device includes a liquid crystal panel including 4-color sub-pixels, a data driver to provide video data signals to each sub-pixel, a gate driver to provide a scan pulse to each sub-pixel, a data conversion part to generate a gain value by analyzing a ratio of an achromatic color signal to a chromatic color signal of 3-color source data inputted from an external source and convert the 3-color source data into 4-color data using the generated gain value, and a timing controller to provide the 4-color data received from the data conversion part to the data driver and control the gate driver and the data driver.

48 citations

Patent
Yang Zhang1, Yongsheng Peng1
22 Sep 2000
TL;DR: In this paper, a pre-driver (202), a bypassable driver amp (220), and a power amplifier (240) are used for RF amplification of a transmit signal within a wireless phone.
Abstract: A method and apparatus for RF amplification of a transmit signal within a wireless phone. The amplifier chain is composed of three parts, a pre-driver (202), a bypassable driver amp (220), and a power amp (240). The configuration of the amplifier chain is adjusted in real time to optimize power consumption for a given output power requirement. At low output power levels the driver amp (220) is bypassed and the power amp (240) is provided a low bias current. At medium output power levels the driver amp (220) is bypassed and the power amp (240) is biased at a moderate current. When high output power is required the driver amp (220) is utilized and the power amp (240) is provided a high bias current. The driver amp (220) is shut down when in the bypassed state. The result of implementing this amplifier configuration is an increase in the efficiency of the transmit amplifier. The increase in amplifier efficiency results in increased talk times for battery powered wireless phones.

48 citations

Journal ArticleDOI
01 May 2007
TL;DR: In this paper, a novel AC-biased holding circuit to stabilize the floating node of the shift register on the gate drivers is proposed to improve the driver reliability, and experimental confirmation validates that the new a-Si:H TFT gate drivers are highly reliable.
Abstract: Integrated a-Si:H TFT gate driver circuits on large area TFT-LCDs are reviewed. A novel AC-biased holding circuit to stabilize the floating node of the shift register on the gate drivers is proposed to improve the driver reliability. Experimental confirmation validates that the new a-Si:H TFT gate drivers are highly reliable

48 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202351
202297
2021235
2020372
2019425
2018449