Topic
Gate driver
About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.
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TL;DR: In this article, a gate driver with amorphous-indium- gallium- zinc-oxide thin-film transistors (TFTs) was proposed for high-yield, high-speed, and ultranarrow gate driver.
Abstract: We report the design and fabrication of a high-yield, a high-speed, and an ultranarrow gate driver with amorphous-indium - gallium - zinc-oxide thin-film transistors (TFTs). A single stage of the gate driver consists of nine TFTs and one capacitor. For supply voltage (VDD) of 20 V, the gate driver operates with a pulsewidth of 2 μs, which is compatible with a 4k2k display operated at 240 Hz. In addition, the proposed gate driver is ultrasmall in physical size, which is only 30 μm in width (pitch) and 720 μm in length, and thus suitable for small-size, high-resolution, and narrow bezel display.
45 citations
TL;DR: Simulation and experimental results have validated that the proposed control strategy for the interleaved flyback based microinverter results in better efficiency compared with the conventional control methods with the output current total harmonic distortion remaining within the specified limits.
Abstract: The paper proposes an optimal control strategy for the interleaved flyback based microinverter to improve its efficiency over the entire operating range. This control scheme is based on the choice of an appropriate operating mode [1-converter discontinuous conduction mode (DCM), 1-converter boundary conduction mode (BCM), 2-converter DCM, and 2-converter BCM] at various instantaneous power magnitudes. The proposed control method reduces the fixed losses associated with the gate driver and the transformer at the low power level. It also reduces the switching losses that may result due to the extremely high-frequency operation of the BCM at the low power level. Additionally, it also reduces the conduction losses through low current peak due to BCM and equal current sharing between the two converters at the high power level. Switching losses, due to the low-frequency operation of the BCM at a high power level, are also reduced. Operating mode selection of the interleaved inverter at a particular power level is based on the information of optimal efficiency. Detailed calculations of peak current references have been carried out for the various operating modes of the interleaved flyback based microinverter. Simulation and experimental results have validated that the proposed control method results in better efficiency compared with the conventional (DCM, hybrid DCM/BCM, hybrid 1-converter/2-converter) control methods with the output current total harmonic distortion remaining within the specified limits.
45 citations
07 Dec 1997
TL;DR: In this article, a 2GHz Si power MOSFET with 50% power-added efficiency and 1.0-W output power at a 3.6-V supply voltage has been developed for use as an RF high-power amplifier in wireless applications.
Abstract: A 2-GHz Si power MOSFET with 50% power-added efficiency and 1.0-W output power at a 3.6-V supply voltage has been developed for use as an RF high-power amplifier in wireless applications. This MOSFET achieves this performance by using a 0.4-/spl mu/m gate power device with an Al-shorted metal-silicide/Si gate structure and a reduced gate finger width pattern.
45 citations
Patent•
13 Dec 2002
TL;DR: In this paper, a power module is adapted to be connected to a voltage source and to supply power to a load, which includes a switching bridge that includes a first power transistor and a second power transistor.
Abstract: A power module is adapted to be connected to a voltage source and to supply power to a load. The power module includes a switching bridge that includes a first power transistor and a second power transistor, a first gate controller for driving the first power transistor and a second gate controller for driving the second power transistor. The first gage controller includes a first gate transformer, and a leakage inductance of the first gate transformer forms a resonant circuit with an input capacitance of the first power transistor. The second gate controller includes a second gate transformer, and a leakage inductance of the second gate transformer forms a resonant circuit with an input capacitance of the second power transistor.
45 citations
TL;DR: Novel high voltage-boosting converters are presented that are constructed based on bootstrap capacitors and boost inductors, and although there are three switches, only one half-bridge gate driver and one low-side gate driver are needed, but no isolated gate driver would be needed.
Abstract: In this paper, novel high voltage-boosting converters are presented. By changing the connection position of the anode of the diode and by using different pulse-width-modulation control strategies, different voltage conversion ratios can be obtained. These converters are constructed based on bootstrap capacitors and boost inductors. Above all, two boost inductors with different values, connected in series, can still make the proposed converters work appropriately. Furthermore, although there are three switches in each converter, only one half-bridge gate driver and one low-side gate driver are needed, but no isolated gate driver would be needed. After some mathematical deductions, some experimental results are provided to verify the effectiveness of the proposed converters.
45 citations