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Gate driver

About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.


Papers
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Journal ArticleDOI
TL;DR: With the authors' own computer program, a complete macromodel of the IGBT for the SPICE simulator has been computed and described and verified with experimental results.
Abstract: During the last few years, great progress in the development of new power semiconductor devices has been made. The new generation of power semiconductors is capable of conducting more current and blocking higher voltage. The IGBT (insulated gate bipolar transistor) is an outgrowth of power MOSFET technology. More like a MOSFET than a bipolar transistor in structure, the IGBT has some of the electrical characteristics of both. Like a MOSFET, the gate of the IGBT is isolated, and drive power is very low. The on-state conduction voltage of an IGBT is similar to that of a bipolar transistor. However, SPICE users are constantly faced with the inability to analyze circuits that contain devices that are not in the SPICE library of the semiconductor models. With the authors' own computer program, a complete macromodel of the IGBT for the SPICE simulator has been computed. In this paper, a complete IGBT SPICE macromodel is described and verified with experimental results. >

38 citations

Patent
25 Jun 2002
TL;DR: In this article, an apparatus and method for driving an electro-luminescence panel wherein pixels in a current driving type electrode-luminance panel are pre-charged to change a storage voltage of the pixel into the corresponding voltage within a limited scanning time.
Abstract: An apparatus and method for driving an electro-luminescence panel wherein pixels in a current driving type electrode-luminescence panel are pre-charged to change a storage voltage of the pixel into the corresponding voltage within a limited scanning time. In the apparatus, a plurality of electro-luminescence cells are arranged at crossings between gate lines and data lines. A gate driver is connected to the gate lines to sequentially drive the gate lines. A data driver is connected to the data lines to apply pixel signals, via the data lines, to the electro-luminescence cells. A pre-charger is provided within the data driver to pre-charge a current into the data lines before the pixel signals are applied via the data lines.

38 citations

Journal ArticleDOI
TL;DR: In this article, a high-temperature silicon carbide CMOS intelligent gate driver for high-power switching applications is presented, where several functions including overvoltage and undervoltage, as well as short-and open-load detection, are provided, all of which are operational up to 300/spl deg/C.
Abstract: In this paper, we present the design and fabrication of a high-temperature silicon carbide CMOS intelligent gate driver circuit intended for high-power switching applications. Using a temperature-insensitive comparator, several functions including overvoltage and undervoltage, as well as short- and open-load detection, are provided, all of which are operational up to 300/spl deg/C. These integrated circuits are ideally suited for harsh and high-temperature environments such as automotive and aircraft jet engines.

38 citations

Patent
09 Sep 1983
TL;DR: In this article, an analog switch circuit consisting of a first transfer gate and a second transfer gate is described, whereby a switching noise on the occasion of turning on of the first gate is bypassed through the second gate to the input signal source.
Abstract: An analog switch circuit comprises a first transfer gate (20) and a second transfer gate (23). The first transfer gate comprise first P-type and N-type field-effect transistors (21) and (22) having first electrodes thereof commonly connected through an output terminal (5) to a load (6) and second electrodes thereof commonly connected through an input terminal (4) to an input signal source (7) of an impedance lower than that of the load. The second transfer gate comprises second P-type and N-type field-effect transistors (24) and (25) of a gate size smaller than that of the respective transistors constituting the first transfer gate having the first and second electrodes connected in parallel with the first and second electrodes of the first P-type and N-type transistors, respectively. The second transfer gate is first turned on and then the first transfer gate is turned on, whereby a switching noise on the occasion of turning on of the first transfer gate is bypassed through the second transfer gate to the input signal source.

38 citations

Patent
21 Feb 1984
TL;DR: In this paper, a power MOSFET is controlled by illuminating a single photovoltaic generator which produces an output current which charges the gate capacitanace of the power mOSFet to turn on the device.
Abstract: A power MOSFET is controlled by illuminating a single photovoltaic generator which produces an output current which charges the gate capacitanace of the power MOSFET to turn on the device. A sensing impedance which may be a diode, MOSFET or other component is connected between the photovoltaic generator and the gate of the power MOSFET. The sensing impedance in the disclosed embodiment is a diode. The sensing impedance forces the power MOSFET gate voltage instantaneously to follow the photovoltaic generator output voltage. The diode is connected in series with the charging circuit and a switching transistor is connected in parallel with the gate capacitance of the MOSFET. The switching transistior base is coupled to the output of the photovoltaic source so that, when the photovoltaic source turns off, and the voltage of the photovoltaic source decays below a predetermined value, the switching transistor turns on to short-circuit the MOSFET gate capacitance so that it can immediately discharge to provide fast turn-off of the power MOSFET. A dV/dt clamping circuit is provided to prevent false charging of the power MOSFET gate through its drain-to-gate capacitance.

38 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202351
202297
2021235
2020372
2019425
2018449