Topic
Gate driver
About: Gate driver is a research topic. Over the lifetime, 7532 publications have been published within this topic receiving 75854 citations.
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13 Nov 2014
Abstract: The ultrahigh voltage (> 12 kV) SiC IGBTs are promising power semiconductor devices for medium voltage power conversion due to feasibility of simple two-level topologies, reduced component count and extremely high efficiency. However, the current devices generate high dv/dt during switching transitions because of the deep punch-through design. This paper investigates the behavior of dv/dt during the two-slope (different slopes before and after punch-through) turn-on and turn-off voltage transitions of these devices, by varying the device current, temperature and field-stop buffer layer design. It is shown that the dv/dt can be minimized by increasing the gate resistance, by taking the turn-on transition as reference. However, it is found that the increase in gate resistance has very weak impact on dv/dt above the punch-through voltage, and also resulting in significantly increased switching energy loss. It is shown that this problem can be addressed by using a two-stage active gate driver, where the gate current is appropriately controlled to limit the dv/dt over punch-through voltage and to minimize the switching energy loss under the punch-through voltage. Experimental results on 15 kV SiC N-IGBTs with field-stop buffer layer thickness of 2 μm and 5 μm are presented up to 11 kV with a detailed discussion of the results.
36 citations
06 Mar 2005
TL;DR: The design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs is examined, illustrating proof of principle of the self-biased gate driver configuration for deriving a stable 5-Vdc output from a 25-V dc input.
Abstract: This paper examines the design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs. The converter is targeted for ambient temperatures of 225 /spl deg/C. A demonstration converter board has been completed and tested illustrating proof of principle of the self-biased gate driver configuration for deriving a stable 5-V dc output from a 25-V dc input. The converter has also demonstrated conventional "off-line" 120 VAC operation to develop a 12 V dc output.
36 citations
Patent•
17 Dec 2013
TL;DR: In this paper, a shift register, a gate driver and a display device are described, which may eliminate the voltage coupled noise generated by a clock signal at an output terminal of the shift register effectively.
Abstract: Disclosed are a shift register, a gate driver and a display device, which relate the field of display technology and may eliminate the voltage coupled noise generated by a clock signal at an output terminal of the shift register effectively The shift register comprises: a first input unit, a clock control unit, a second input unit, an inverting unit, a pulling-down unit and a first level selecting unit, a second level selecting unit, a third level selecting unit; the first input unit is connected with a first input signal terminal, the first level selecting unit and the second input unit, respectively, wherein a node at which the first input unit is connected with the second input unit is a pulling-up node, the first input unit is used for controlling a potential at the pulling-up node The embodiments of the present disclosure may be applied to various display devices
36 citations
Patent•
09 May 1996
TL;DR: In this article, a boost converter type power factor correction circuit for an AC-to-DC power converter is controlled by a single power MOSFET which is operated by a gate driver in a low-level constant current surge limiting mode during initial charging of the bulk capacitor, and in a high-level current-limiting mode once the bulk capacitance is sufficiently charged for normal operation.
Abstract: Current flow between the boost inductor and the output bulk capacitor in a boost converter type power factor correction circuit for an AC-to-DC power converter is controlled by a single power MOSFET which is operated by a gate driver in a low-level constant current surge limiting mode during initial charging of the bulk capacitor, and in a high-level current-limiting mode once the bulk capacitor is sufficiently charged for normal operation. The power MOSFET gate driver is in turn controlled by a control logic which is connected to the input and output voltages of the boost converter, and which allows the circuit to cope with short circuits and input power interruptions and glitches.
36 citations
Patent•
24 Sep 1996
TL;DR: The bidirectional lateral insulated gate bipolar transistor (IGBTB) as mentioned in this paper is a bipolar transistor with two gate electrodes, which can conduct current in two directions and relies on a RESURF operation to provide high voltage blocking in both directions.
Abstract: A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a RESURF operation to provide high voltage blocking in both directions. The IGBT is symmetrical, having N-type drift region in contact with an oxide layer. A P-type region is provided above the N-type-drift region, having a portion more heavily doped with P-type dopants. The RESURF operation can be provided by a buried oxide layer or by a P substrate or by a horizontal PN junction. The IGBT can be utilized in various power operations, including a matrix switch or a voltage source converter.
36 citations