Showing papers on "Gate oxide published in 2017"

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

Abstract: A physics-based 2-D analytical model for surface potential, electric field, drain current, subthreshold swing (SS) and threshold voltage of dual-material (DM) double-gate tunnel FETs (DG TFETs) with SiO2/HfO2 stacked gate-oxide structure has been developed in this paper. The parabolic-approximationtechnique, with suitable boundary conditions, has been used to solve Poisson’s equation in the channel region. Channel potential model is used to develop electric field expression. The drain current expression is extracted by analytically integrating the band-to-band tunneling generation rate over the channel thickness. Threshold voltage has been extracted by maximum transconductance method. The proposed model also demonstrates that the proper choice of work function for both the latterly contacting gate electrode (near the source and drain) materials which can give better results in terms of input-output characteristics, SS, and ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ than the conventional TFET devices. Although the proposed model has been primarily developed for Si-channel-based DM DG TFET devices, however, the model has also been shown to be applicable for other materials like SiGe (indirect bandgap) and InAs channel-based TFET structures. The results of the proposed model have been validated against the TCAD simulation results obtained by using SILVACO ATLAS device simulation software.

A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection

Abstract: To reduce the fabrication complexity and cost of the nanoscale devices, a charge-plasma concept is introduced for the first time to implement a dielectric-modulated junctionless tunnel field-effect transistor (DM-JLTFET) for biosensor label-free detection. The formation of p+ source and n+ drain regions in DM-JLTFET is done by the deposition of platinum (work function = 5.93 eV) and hafnium (work function = 3.9 eV) materials, respectively, over the silicon body. Furthermore, a nanogap cavity embedded within the gate dielectric is created by etching the portion of gate oxide layer toward the source end for sensing biomolecules. For this, the sensing capability of DM-JLTFET has been investigated in terms of variation in dielectric constant, charge density, length, and thickness of the cavity at different bias conditions. Finally, a comparative study between DM-JLTFET and MOSFET biosensor is investigated. The implementation of proposed device and all the simulations have been performed by using ATLAS device simulator.

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Abstract: In this letter, we report a detailed experimental investigation of the time-dependent breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate, controlled by a Schottky metal/p-GaN junction. When a high stress voltage is applied on the gate, a large voltage drop and an electric field occur in the depletion region of the p-GaN close to the metal interface, promoting the formation of a percolation path. We have investigated the mechanisms underlying the gate breakdown by adopting different stress conditions, analyzing the influence of the temperature, and investigating the activation energy of the traps. In addition, thanks to this approach, the device lifetime has been evaluated and an original empirical model, representing the relationship between the gate leakage current and the time to failure, has been proposed.

Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Abstract: Artificial synaptic thin film transistors (TFTs) capable of simultaneously manifesting signal transmission and self-learning are demonstrated using transparent zinc oxide (ZnO) in combination with high κ tantalum oxide as gate insulator. The devices exhibit pronounced memory retention with a memory window in excess of 4 V realized using an operating voltage less than 6 V. Gate polarity induced motion of oxygen vacancies in the gate insulator is proposed to play a vital role in emulating synaptic behavior, directly measured as the transmission of a signal between the source and drain (S/D) terminals, but with the added benefit of independent control of synaptic weight. Unlike in two terminal memristor/resistive switching devices, multistate memory levels are demonstrated using the gate terminal without hampering the signal transmission across the S/D electrodes. Synaptic functions in the devices can be emulated using a low programming voltage of 200 mV, an order of magnitude smaller than in conventional resistive random access memory and other field effect transistor based synaptic technologies. Robust synaptic properties demonstrated using fully transparent, ecofriendly inorganic materials chosen here show greater promise in realizing scalable synaptic devices compared to organic synaptic and other liquid electrolyte gated device technologies. Most importantly, the strong coupling between the in-plane gate and semiconductor channel through ionic charge in the gate insulator shown by these devices, can lead to an artificial neural network with multiple presynaptic terminals for complex synaptic learning processes. This provides opportunities to alleviate the extreme requirements of component and interconnect density in realizing brainlike systems.

Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage

Abstract: The condition monitoring problem of power devices is significant for diagnostics and prognostics of a switched-mode power supply (SMPS) system. For power mosfet , the gate oxide degradation often occurs in various applications. However, there is no online condition monitoring method for gate oxide degradation so far. In this paper, a new precursor that can be used for online condition monitoring of power mosfet gate oxide degradation is proposed. Gate oxide degradation mechanisms and effect are summarized, and the mosfet turn-on process is analyzed. Then, a theoretical model is established to describe the relationship between miller platform voltage and two types of gate oxide defects, and miller platform voltage is identified as a new precursor. The precursor can be extracted without impacting system operation, thus online condition monitoring can be accomplished. The accelerated degradation test is carried out for power mosfet s with both high electric field and gamma irradiation methods, and the degraded devices injection and in situ monitoring of miller platform voltage are conducted on a BOOST circuit to verify the feasibility of the new precursor. Experimental results demonstrate that the new precursor can be applied to online condition monitoring of power mosfet gate oxide degradation in the SMPS system.

Performance and ruggedness of 1200V SiC — Trench — MOSFET

Abstract: This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200 V CoolSiC™ MOSFET are presented. The favorable temperature behavior of the on-state resistance combined with a low sensitivity of the switching energies to temperature simplify the design-in. Long-term gate oxide tests reveal a very low extrinsic failure rate well matching the requirements of industrial applications.

IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

Abstract: Infrared measurements are used to assess the measurement accuracy of the peak gate current (I GPeak ) method for Insulated-gate bipolar transistor (IGBT)junction temperature measurement. Single IGBT chips with the gate pad in both the center and the edge are investigated, along with paralleled chips, as well as chips suffering partial bondwire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (V CE (low ) ). In all cases, the IG Peak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with nonnegligible temperature disequilibrium between chips, the I GPeak method delivers a measurement based on the average temperature of the gate pads.

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery

Abstract: We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf0.8Zr0.2O2 (HZO) fabricated using a self-aligned gate last process. The FETs are fabricated using silicon-on-insulator wafers, and the ferroelectric is deposited with atomic layer deposition. The reported devices have an ON/OFF drain current ratio of up to 106, a read endurance of $>10^{10}$ read cycles, and a program/erase endurance of 107 cycles. Furthermore, healing of the transistor after gate insulator breakdown is demonstrated.

A two-dimensional semiconductor transistor with boosted gate control and sensing ability

Abstract: Transistors with exfoliated two-dimensional (2D) materials on a SiO2/Si substrate have been applied and have been proven effective in a wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, and spintronics However, these devices usually suffer from limited gate control because of the thick SiO2 gate dielectric and the lack of reliable transfer method We introduce a new back-gate transistor scheme fabricated on a novel Al2O3/ITO (indium tin oxide)/SiO2/Si "stack" substrate, which was engineered with distinguishable optical identification of exfoliated 2D materials High-quality exfoliated 2D materials could be easily obtained and recognized on this stack Two typical 2D materials, MoS2 and ReS2, were implemented to demonstrate the enhancement of gate controllability Both transistors show excellent electrical characteristics, including steep subthreshold swing (62 mV dec-1 for MoS2 and 83 mV dec-1 for ReS2), high mobility (6179 cm2 V-1 s-1 for MoS2 and 732 cm2 V-1 s-1 for ReS2), large on/off ratio (~107), and reasonable working gate bias (below 3 V) Moreover, MoS2 and ReS2 photodetectors fabricated on the basis of the scheme have impressively leading photoresponsivities of 4000 and 760 A W-1 in the depletion area, respectively, and both have exceeded 106 A W-1 in the accumulation area, which is the best ever obtained This opens up a suite of applications of this novel platform in 2D materials research with increasing needs of enhanced gate control

Thermally oxidized 2D TaS 2 as a high-κ gate dielectric for MoS 2 field-effect transistors

Abstract: We report a new approach to integrating high-κ dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assembly of layered two-dimensional (2D) TaS2. Combined x-ray photoelectron spectroscopy (XPS), optical microscopy, atomic force microscopy (AFM), and capacitance–voltage (C–V) measurements confirm that multilayer TaS2 flakes can be uniformly transformed to Ta2O5 with a high dielectric constant of ~15.5 via thermal oxidation, while preserving the geometry and ultra-smooth surfaces of 2D TMDs. Top-gated MoS2 FETs fabricated using the thermally oxidized Ta2O5 as gate dielectric demonstrate a high current on/off ratio approaching 106, a subthreshold swing (SS) down to 61 mV/dec, and a field-effect mobility exceeding 60 cm2 V−1 s−1 at room temperature, indicating high dielectric quality and low interface trap density.

Modeling and Simulation Investigation of Sensitivity of Symmetric Split Gate Junctionless FET for Biosensing Application

Abstract: In this paper, an analytical model has been developed for a split gate junctionless (JL) MOSFET, which works as a bio-transistor to detect the analytes (biomolecules), such as protein, DNA, enzyme, cell, and so on, using the dielectric-modulation technique. We have also studied the neutralization of charged analytes when charge reduction due to drying out. The analytical model has been investigated by solving 2-D Poisson’s equation. For the validation of analytical results, a split gate JL MOSFET has been virtually fabricated through sprocess and the electrostatic properties of device simulated by sdevice tools of the “Sentaurus” device simulator. For the bio-species immobilization, an underlap region also known as open cavity is formed in the device through etching oxide material and gate material from the middle of the channel. The electrostatic properties of device, such as surface potential, threshold voltage, drain current, and sensitivity, get affected by the immobilization of analytes at the SiO2 layer (which acts as an adhesion layer in the cavity region). The change in the threshold voltage and transfer characteristics of the device is pondered as the sensing metric to detect the bio-targets under dry environment.

Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

Abstract: The outstanding electron transport properties of InGaAs and InAs semiconductor materials, makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state and OFF state performance of 30 nm gate length InGaAs/InAs/InGaAs buried composite channel MOSFETs using various high-K dielectric materials is analyzed using Synopsys TCAD tool. The device features a composite channel to enhance the mobility, an InP spacer layer to minimize the defect density and a heavily doped multilayer cap. The simulation results show that MOSFETs with Al 2 O 3 /ZrO 2 bilayer gate oxide exhibits higher gm/I D ratio and lower sub threshold swing than with the other dielectric materials. The measured values of threshold voltage (V T ), on resistance (R ON ) and DIBL for Lg = 30 nm In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite channel MOSFET having Al 2 O 3 /ZrO 2 (EOT = 1.2 nm) bilayer dielectric as gate oxide are 0.17 V, 290 Ω-µm, and 65 mV/V respectively. The device displays a transconductance of 2 mS/µm.

Analytical Model of pH sensing Characteristics of Junctionless Silicon on Insulator ISFET

Abstract: In this paper, an analytical model has been developed for junctionless silicon on insulator ion-sensitive FET for pH sensing applications. The pH sensors detect the change of the hydrogen ion concentration in the aqueous solution. The modeled results show good agreement with the simulation results obtained by using Sentaurus. The electrolyte region has been considered by changing appropriate intrinsic semiconductor material in which the electron and hole charges represent the mobile ions in the aqueous solution. The effect of pH on surface potential, threshold voltage, and drain current has been investigated through model and simulations. In addition, the impact of different gate oxide materials, which act as adhesion layer, has been investigated. The pH response is defined as the amount of threshold voltage shift when the pH (in the injected solution) is varied from lower to higher values. Effect of the electrolyte region thickness on the pH sensitivity has also been discussed in this paper.

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Abstract: In this work we investigate the failure modes of GaN based e-mode transistors with a p-GaN gate, for which the top contact towards the p-GaN is realized with a Schottky metal First the general performance and stability of the platform will be demonstrated, together with the time dependent dielectric breakdown (TDDB) behavior of the gate The failure mechanism of the gate has been studied by performing constant voltage stress (CVS) measurements This has been performed for two different process conditions with varying active Mg concentration Main results in this paper demonstrate i Reliable device operation for p-GaN gates with Schottky metal contacts II TDDB degradation of the gate driven by a percolation path III The type of percolation path is dependent on the gate processing Results indicate the formation of a percolation path in the AlGaN barrier, which is demonstrated by experiments and further verified by modelling

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.

Abstract: The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f(max), cutoff frequency f(T), ratio f(max)/f(T), forward transmission coefficient S-21, and open-circuit voltage gain A(v) All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f(max)/f(T) > 3, A(v) > 30 dB, and S-21 = 125 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance similar to 600 S/m The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain

Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

Abstract: We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ∼ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides.

Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

Abstract: Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to Poole-Frenkel emission for both MIS-HEMTs. The dominant conduction mechanism in low to medium forward bias is trap-assisted tunneling while it is Fowler–Nordheim tunneling at high forward bias. However, conduction near zero gate bias is dominated by defect-assisted tunneling for both sets of MIS-HEMTs. The gate leakage current is primarily dependent on the properties of the gate dielectric material and dielectric/ semiconductor interface rather than the barrier layer. A model is proposed for the gate leakage current in GaN-based MIS-HEMTs, and the method to extract the related model parameters is also presented in this paper. The proposed gate current model matches well with the experimental results for both AlInN/GaN and AlGaN/GaN MIS-HEMTs over a wide range of gate bias and measurement temperature.

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.

Abstract: The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency capacitance–voltage (C–V) and current–voltage characterization of top-gated MoS2 metal–oxide–semiconductor field effect transistors (MOSFETs). The analysis was performed on few layer (5–10) MoS2 MOSFETs fabricated using photolithographic patterning with 13 and 8 nm HfO2 gate oxide layers formed by atomic layer deposition after in-situ UV-O3 surface functionalization. The impedance response of the HfO2/MoS2 gate stack indicates the existence of specific defects at the interface, which exhibited either a frequency-dependent distortion similar to conventional Si MOSFETs with unpassivated silicon dangling bonds or a frequency dispersion over the entire voltage range corresponding to depletion of the HfO2/MoS2 surface, consistent with interface traps distributed over a range of energy levels. The interface defects density (Dit) was extracted from the C–V responses by the high–low frequency and the multiple-frequency ext...

Experimental and numerical demonstration and optimized methods for SiC trench MOSFET short-circuit capability

Abstract: This paper focused on the investigation of short-circuit capability and failure mechanism for the commercially available SiC trench MOSFETs. There are three failure mechanisms; (1) avalanche generation, (2) thermal runaway and (3) breakdown of gate oxide layer between gate-source electrodes by different short-circuit conditions. These are dependent upon the drain voltage and, especially in the high voltage region, the short-circuit capability could be improved by both the less negative gate-off voltage and cooling from top of the device without sacrifice of R ON A.

Non Volatile MoS$_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

Abstract: We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19 ${\mu}A/{\mu}$m), high on-off ratio (10$^{7}$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have selfconsistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces and therefore it should be possible to integrate 2D electronics with single crystalline functional oxides.

Air gap spacer for metal gates

Abstract: A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

Abstract: Direct growth of an ultrathin gate dielectric layer with high uniformity and high quality on graphene remains a challenge for developing graphene-based transistors due to the chemically inert surface properties of graphene. Here, we develop a method to realize atomic-layer-deposition (ALD) growth of an ultrathin high-κ dielectric layer on graphene through premodifying the graphene surface using electron beam irradiation. An amorphous carbon layer induced by electron beam scanning is formed on graphene and then acts as seeds for ALD growth of high-κ dielectrics. A uniform HfO2 layer with an equivalent oxide thickness of 1.3 nm was grown as a gate dielectric for top-gate graphene field-effect transistors (FETs). The achieved gate capacitance is up to 2.63 μF/cm2, which is the highest gate capacitance on a graphene solid-state device to date. In addition, the fabricated top-gate graphene FETs present a high carrier mobility of up to 2500 cm2/(V·s) and a negligible gate leakage current of down to 0.1 mA/cm2, ...

A SiC Trench MOSFET concept offering improved channel mobility and high reliability

Abstract: This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the channel and the gate dielectric as well as their interface. Different approaches to realize a SiC MOSFET are briefly discussed and the CoolSiC™ MOSFET concept is introduced which balances low conduction losses with an IGBT-like reliability. Long term gate oxide tests reveal that the extrinsic failure rate can be confidently predicted to be less than 1 FIT per die in 20 years under specified use conditions for industrial applications.

New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs

Abstract: Silicon carbide (SiC) and gallium nitride metal–oxide–semiconductor field-effect transistors (MOSFETs) are capable of processing high power at high switching frequencies with less switching losses and conduction losses. The gate driver circuit power consumption is directly proportional to the switching frequency. The power taken from the gate supply is dissipated in the gate resistance of the conventional gate driver (CGD) circuit. Instead of dissipating all the gate driver energy, some energy can be recovered or recycled by utilizing the principle of resonance. This reduces the net power being taken from the gate supply. This paper presents a new resonant gate driver (RGD) circuit which consumes less power compared to the CGD circuit at high switching frequencies. The proposed gate driver is designed for SiC MOSFETs. It can be modified appropriately to suit for insulated-gate bipolar transistors and other MOSFETs also. The performance of the proposed circuit is simulated in LTSpice environment, and an experimental prototype of the proposed circuit is developed to validate its performance. The proposed RGD circuit has achieved nearly 50% reduction in gate driver power consumption compared to the CGD circuit.

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

Abstract: A novel silicon carbide (SiC) trench MOSFET with floating/grounded junction barrier-controlled gate structure (FJB-MOS/GJB-MOS) is presented and investigated utilizing Sentaurus TCAD simulations. The split P+ region introduced beneath the trench could better shield the gate oxide from the high electric field in the blocking mode, leading to an enhancement in the breakdown voltage while without significant degradation of other characteristics. As a result, the FJB-MOS with floating P+ shielding exhibits a higher figure of merit related to the breakdown voltage and the specific on-resistance ( ${V}_{\textsf {BR}}^{{\,\textsf {2}}}/{R}_{ \mathrm{\scriptscriptstyle ON},\textsf {sp}}$ ), which is improved by 15% and 49%, respectively, with comparison to those of the state-of-the-art double-trench MOSFET and L-shaped gate trench MOSFET. In terms of the GJB-MOS with grounded P+ shielding, it shows great advantage in reducing the switching losses thanks to the lower specific gate–drain charge ${Q}_{{\:\textsf {gd,sp}}}$ and is more conductive to high frequency applications. Additionally, the formation of the P+ region is aided by the Sentaurus Process and the processing implementation of the proposed structure is discussed.

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

Abstract: The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-...