Grain boundary

About: Grain boundary is a research topic. Over the lifetime, 70126 publications have been published within this topic receiving 1525995 citations.

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

Abstract: Single-layered molybdenum disulphide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for the next generation of nanoelectronics. Here, we report the controlled vapour phase synthesis of molybdenum disulphide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area, single- and few-layered films. Using high-resolution electron microscopy imaging, the atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulphide atomic layers are examined, and the primary mechanisms for grain boundary formation are evaluated. Grain boundaries consisting of 5- and 7- member rings are directly observed with atomic resolution, and their energy landscape is investigated via first-principles calculations. The uniformity in thickness, large grain sizes, and excellent electrical performance signify the high quality and scalable synthesis of the molybdenum disulphide atomic layers.

Softening of nanocrystalline metals at very small grain sizes

Abstract: Nanocrystalline solids, in which the grain size is in the nanometre range, often have technologically interesting properties such as increased hardness and ductility. Nanocrystalline metals can be produced in several ways, among the most common of which are high-pressure compaction of nanometre-sized clusters and high-energy ball-milling1,2,3,4. The result is a polycrystalline metal with the grains randomly orientated. The hardness and yield stress ofthe material typically increase with decreasing grain size, a phenomenon known as the Hall–Petch effect5,6. Here we present computer simulations of the deformation of nanocrystalline copper, which show a softening with grain size (a reverse Hall–Petch effect3,7) for the smallest sizes. Most of the plastic deformation is due to a large number of small ‘sliding’ events of atomic planes at the grain boundaries, with only a minor part being caused by dislocation activity in the grains; the softening that we see at small grain sizes is therefore due to the larger fraction of atoms at grain boundaries. This softening will ultimately impose a limit on how strong nanocrystalline metals may become.

CaCu3Ti4O12: One-step internal barrier layer capacitor

Abstract: There has been much recent interest in a so-called “giant-dielectric phenomenon” displayed by an unusual cubic perovskite-type material, CaCu3Ti4O12; however, the origin of the high permittivity has been unclear [M. A. Subramanian, L. Dong, N. Duan, B. A. Reisner, and A. W. Sleight, J. Solid State Chem. 151, 323 (2000); C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto, and A. P. Ramirez, Science 293, 673 (2001); A. P. Ramirez, M. A. Subramanian, M. Gardel, G. Blumberg, D. Li, T. Vogt, and S. M. Shapiro, Solid State Commun. 115, 217 (2000)]. Impedance spectroscopy on CaCu3Ti4O12 ceramics demonstrates that they are electrically heterogeneous and consist of semiconducting grains with insulating grain boundaries. The giant-dielectric phenomenon is therefore attributed to a grain boundary (internal) barrier layer capacitance (IBLC) instead of an intrinsic property associated with the crystal structure. This barrier layer electrical microstructure with effective permittivity values in excess of 10 000 can be fa...

Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Abstract: Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.

Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Abstract: The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit ( zT ). The zT of bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi 0.5 Sb 1.5 Te 3 (bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved the zT to 1.86 ± 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices.