Showing papers on "Graphene oxide paper published in 1988"

Method for the production of coated glass with a high transmissivity in the visible spectral range and with a high reflectivity for thermal radiation

Abstract: Method for making glazing with a high transmissivity in the visible spectral range and with a high reflectivity for thermal radiation as well as low surface resistance. On substrates of mineral glass a system of coatings is built up in the following order: Coating 1: oxide from the group, tin oxide, silicon dioxide, aluminum oxide, tantalum oxide, zirconium oxide, or mixtures thereof, Coating 2: alloy of 80 weight-percent of nickel and 20 weight-percent of chromium, Coating 3: silver or a silver alloy with at least 50 weight-percent silver content, Coating 4: alloy of 80 weight-percent of nickel and 20 weight-percent of chromium, Coating 5: oxide from the group tin oxide, silicon dioxide, aluminum oxide, tantalum oxide, zirconium oxide, or mixtures thereof. Thereafter the substrate with the entire packet of coatings is heated to the softening temperature of the glass and bent to the final shape.

Thin film oxide dielectric structure and method

Abstract: A metallic oxide such as aluminum oxide of significantly improved electrical properties is disclosed. The method of oxide formation includes a combination of soft porous anodization followed by transformation to a hard barrier form of oxide using inter alia low temperature electrolytes, constant voltage anodizing, and timely rate of current change responsive termination of the anodizing process. Use of the resulting oxide in electrical insulation, optic and other environments is contemplated.

Preparation of metal oxide fibers from intercalated graphite fibers

Abstract: Ceramic metal oxide fibers are made by intercalating graphitic graphite fibers with a mixture of metal chlorides and then heating the intercalated fibers to oxidize or burn off the carbon leaving a metal oxide fiber having generally the shape and structure of the graphite fiber precursors to make composite fibers, such as binary fibers of aluminum oxide-zirconium oxide and aluminum oxide-ferric oxide.

Method of producing porous membranes of sinterable refractory metal oxides

Abstract: Porous membranes made of sintered refractory metal oxides, e.g., silica aluimina, titania, zirconia, tungsten oxide, etc., and to a process for their formation. The membranes are formed by dispersing a powder of the metal oxide in an organic polymer. The relative amount of metal oxide to polymer is such that, after the polymer has been carbonized in a subsquent step, there is a stoichiometrical excess of the oxide to carbon. The solution is then shaped to form a desired thin membrane, and the polymer is then carbonized by heating it in a non-oxidizing atmosphere. The resulting oxide/carbon product is heated to a temperature at which (a) the carbon reacts with the oxide to form a volatile sub-oxide and carbon monoxide and (b) the remaining (unreacted) oxide particles sinter together. The heating is carried out in a non-oxidizing atmosphere containing either no nitrogen whatsoever, or an amount of nitrogen less than that which results in the formation of a non-porous product. The sintered membranes can be used, for example, as filters and catalyst supports and have good strength and controlled porosity.

A method of preparing a superconducting oxide and superconducting oxide metal composites

Abstract: A superconducting oxide is prepared by combining the metallic elements of the oxide to form an alloy, followed by oxidation of the alloy to form the oxide. Superconducting oxide-metal composites are prepared in which a noble metal phase intimately mixed with the oxide phase results in improved mechanical properties. The superconducting oxides and oxide-metal composites are provided in a variety of useful forms.

Method of producing oxide superconducting wire and oxide superconducting wire produced by this method

Abstract: A method of producing an oxide superconducing wire. A non-oxidizing metal layer is formed between an oxide superconducting material and an oxidizing metal support in order to prevent oxygen from being taken away from the oxide superconducting material by the oxidizing metal support during a subsequent heat treatment for producing an oxide superconductor to thereby obtaining a wire composite. The wire composite is then heated to produce the oxide superconductor.

Photo-anodic behaviour of α-ferric oxide film electrodes coated with various metal oxides

Abstract: In an attempt to improve the performance of α-ferric oxide as a photo-anode on which oxygen evolution occurs, α-ferric oxide film electrodes coated with various metal oxides were prepared and their characteristics were investigated. Tungsten oxide was found to exhibit a notable positive influence on the coated oxide photo-anode performance. This influence is a result of an increase in the faradaic oxygen reaction rate on the oxide.

Multi-layered field oxide structure

Abstract: A radiation-hardened field oxide comprises a thin layer of high-quality thermal oxide, a thick layer of borophosphosilica glass and a diffusion barrier layer of undoped oxide, with the boron and phosphorous provising recombination sites for electron-hole pairs.

Structure and Property of Oxide Films Formed on Aluminum

Abstract: Structures of typical oxide films formed on aluminum, and the structural changes with a combination of treatments are reviewed.Oxide films on Al are classified into four typical groups by structure : porous oxide films, barrier oxide films, thermal oxide films, and hydroxide films. The porous oxide films are formed anodically in acid solutions and barrier oxide films in neutral solution and the thermal oxide films are formed by heat treatments and hydroxide film by hydrothermal treatments. The morphology and formation behavior of these oxide films are described briefly.Three characteristic phenomena observed with the combination of treatments are described : pore-filling, sealing, and formation of composite oxide films. Pore-filling, where pores of porous oxide films are filled with new oxides, takes place by anodizing porous oxide-covered Al in a neutral solution, and is useful for determining the porosity of the oxide film. Sealing of pores in oxide films is attained by hydration of oxide exposed to hot water, and the dissolution rate of the sealed oxide film is much lower than that of unsealed film. Composite oxide films are formed by anodizing hydroxide-covered Al in neutral solutions, and the growth of the oxide film proceeds by dehydration of hydroxide at the hydroxide/oxide interphase and formation of oxide at the oxide/metal interphase.

Method for generating a sunken oxide

Abstract: A method for producing a recessed oxide allows the fabrication of large bonding pads with small capacitance. These bonding pads on simultaneously thick oxide on the semiconductor surface enable contact exposure with good image formation of fine structures on the surface of a transistor. With a protective layer (2), a region (S1) of a semiconductor surface (1) is covered. The area of the semiconductor surface (1) uncovered with the protective layer (2) is etched. Subsequently, an oxide (3) of desired thickness (b) is deposited. With a second phototechnological step the deposited oxide (3) is etched with a structure (S2). Thermal oxidation follows with growth of a hermetic oxide layer (4) the thickness (c) of which is small relative to the thickness (b) of the deposited oxide layer (3). The thermic oxide layer (4) is structured to form the desired geometry.

Oxide/metal interface on 20Cr–25Ni–Nb stainless steel

Abstract: 20Cr–25Ni–Nb stabilised stainless steel is used to contain the fuel in the advanced gas cooled reactor. During operation, this steel must withstand temperatures from 600 to 1073 K in CO2 gas at 40 atm pressure. It is important that the oxide which forms on this steel is thoroughly characterised and the adherence of the oxide to the metal is understood. A technique of sputter ion plating has been used to remove the oxide from the metal without destroying either metal or oxide. This involves plating the oxide with nickel or molybdenum at a temperature of 600 K, while sputtering the surface with argon ions. On cooling, stresses set up between the oxide and the metal cause the oxide plus sputtered layer to peel off allowing both the metal and oxide sides of the interface to be examined. Results are presented from studies of the metal/oxide interface using scanning Auger microscopy. Analysis of grain centres and grain boundaries indicates that silicon and chromium play an important role in oxide/metal ...

Electric Resistance Change Mechanism of Indium-Tin Oxide Film During Deposition of Dielectric Oxide Films by RF Magnetron Sputtering : Techniques, Instrumentations and Measurement

Abstract: Electric resistance change of indium-tin oxide (ITO) film was investigated when dielectric oxide films such as Sr(Zr0.2Ti0.8)O3 and Y2O3 for an electroluminescent device were deposited on the ITO by the rf magnetron sputtering method using oxide ceramic targets. In order to understand the mechanism of the resistance change, a dc voltage of -70~+70 V was biased to an ITO film during the sputtering of dielectric oxide films. The resistance of the ITO film became higher in the positive bias region. The cause of the increase in resistance of the ITO films was confirmed to be oxidation by the oxide targets and the sputtering gas. The amount of the resistance change could be qualitatively explained by the ratio of the oxygen introduced into the ITO film and the combined oxygen forming O2 gas at the ITO surface incident to the ITO film at the sputtering of the dielectric oxide films.

Process for producing an embedded oxide

Abstract: A method for producing a buried oxide to enable the production of large connection pads with a small capacity of these connection pads at the same time a thick oxide on the semiconductor surface with good imaging of fine structures on the surface of a transistor, in particular also in contact exposure. With a protective layer (2) is covered an area (S1) of a semiconductor surface (1). The non with the protective layer (2) covered area of ​​the semiconductor surface (1) is etched. Then, an oxide (3) to the desired thickness (b) is deposited. With a second photographic technique step, the deposited oxide (3) with a structure (S2) is etched. It is followed by a thermal oxidation to grow a thermal oxide layer (4) whose thickness (c) is small compared to the thickness (b) of the deposited oxide layer (3). The thermal oxide layer (4) is structured with the desired geometry.