Showing papers on "Graphene oxide paper published in 1994"
1,474 citations
TL;DR: In this article, a modified Staudenmaier method and an electrochemical one were used to investigate the formation process of graphite oxides, and the results strongly support the (C 2 F ) n -type structure model of graphs.
383 citations
Patent•
27 Dec 1994
TL;DR: In this paper, a separator for a solid electrolyte fuel cell is formed out of a separators substrate 14 containing cermet made of a heat resistant metal having an alloy containing 5% or more of chrome and a ceramic material, and a protection film of metallic oxide laid on the gas concordant surface of the cathode 12 in such a state as not being in direct contact with cathode gases.
Abstract: PURPOSE: To provide high density and strength and high electrical conductivity, maintain high resistance against heat and corrosion, allow the adjustment of thermal expansion characteristics such as a coefficient of thermal expansion, restrain the diffusion of chrome as a separator component, or the oxide thereof due to the existence of a protection film to prevent an adverse effect on a cathode, and maintain a high cell performance over a long time. CONSTITUTION: A separator for a solid electrolyte fuel cell is formed out of a separator substrate 14 containing cermet made of a heat resistant metal having an alloy containing 5% or more of chrome and a ceramic material, and a protection film of metallic oxide laid on the gas concordant surface of the cathode 12 of the substrate 14 in such a state as not being in direct contact with cathode gases. In this case, the alloy is preferably a nickel or iron base alloy, and the ceramic material is preferably alumina or a rare earth composite oxide. Furthermore, the metallic oxide is preferably indium oxide, Sn-doped indium oxide, zinc oxide, tin oxide, Sb-doped tin oxide, oxide cobalt, iron oxide or a rare earth composite oxide.
25 citations
24 citations
TL;DR: In this article, discharge characteristic studies of graphite oxyfluorides as cathode materials in lithium-battery systems, using liquid or solid electrolytes, are reported, and their performances are compared with those of original graphite oxide and graphite fluoride compounds.
17 citations
Patent•
09 Nov 1994
TL;DR: In this paper, a target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium dioxide-tin dioxide powders.
Abstract: A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.
16 citations
TL;DR: The structure of thermal oxide films on copper has been investigated by transmission electron microscopy of ultramicrotomed sections as mentioned in this paper, which revealed the mosaic structure of the oxide and the oxide/metal interface with atomic resolution.
10 citations
TL;DR: Results are presented for the perpendicular incidence birefringence of aluminum oxide, Merck Substance Hi, silicon oxide, tantalum oxide, titanium oxide, and zirconium oxide.
Abstract: We discuss recent developments in methods for monitoring the anisotropic growth and properties of tilted columnar films and present results for the perpendicular incidence birefringence of aluminum oxide, Merck Substance H1, silicon oxide, tantalum oxide, titanium oxide, and zirconium oxide.
10 citations
Patent•
22 Nov 1994
TL;DR: In this paper, an apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder was presented by hot-pressing the powder in a graphite die assembly and a gas release device was disposed within the die cavity to minimize the amount of trapped vapor and gas.
Abstract: An apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder (11) by hotpressing the metal oxide powder (11) in a graphite die assembly (12) having a ceramic barrier sleeve (24) disposed therein to isolate the metal oxide powder (11) from the graphite die assembly (12) components. To avoid the drawbacks of retaining vapors and gases in the powdered target material during hot-pressing, a gas release device is disposed within the die cavity (19) to minimize the amount of trapped vapor and gas. Heat treating said powdered target starting material prior to loading said material into said die cavity to partially reduce said powder also reduces the amount of vapor and gas retained in the powdered target material during hot-pressing.
8 citations
Patent•
14 Jun 1994
TL;DR: In this article, a conductive film is formed of composite conductive powder obtained by baking a mixture of indium oxide powder containing tin oxide, titanium oxide, or zirconium oxide as a dopant.
Abstract: PURPOSE:To provide composite conductive powder and a conductive film by reducing the content of indium, which causes highest material cost among ITO films, so as to make high transparency comparative with high conductivity even in a coating method. CONSTITUTION:A conductive film is formed of composite conductive powder obtained by baking a mixture of indium oxide powder containing tin oxide, titanium oxide or zirconium oxide as a dopant with tin oxide powder containing antimony oxide, tantalum oxide or niobium oxide as a dopant.
8 citations
Patent•
10 Nov 1994TL;DR: In this article, a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide layer by wet oxidizing the surface of the substrate.
Abstract: In a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide film by wet oxidizing the surface of the semiconductor substrate, which results in a compound oxide film consisting of the HTO film and the wet oxide film. Therefore, a high quality oxide film having excellent electrical characteristics can be formed.
Patent•
25 Aug 1994TL;DR: In this article, an apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder by enveloping the oxide powder in at least one layer of a barrier material while the powder is hot-pressed using a graphite die assembly is described.
Abstract: An apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder by enveloping the metal oxide powder in at least one layer of a barrier material while the powder is hot-pressed using a graphite die assembly.
Patent•
12 Dec 1994
TL;DR: In this paper, a method utilizing layered copper oxide release materials to separate oxide films from the growth substrates was proposed. But the method of forming free standing oxide films comprises the steps of: first forming a copper oxide release material, such as a high temperature superconductor, YBCO, on a growth substrate (10), such as LaAlO3, second, forming an oxide film, (14) on the copper oxides, and third, preferentially etching away the copper Oxides to separate the oxide film from the substrate (14).
Abstract: A method utilizing layered copper oxide release materials to separate oxide films from the growth substrates. The method of forming free standing oxide films comprises the steps of: first forming a copper oxide release material, (12), such as a high temperature superconductor, YBCO, on a growth substrate (10), such as LaAlO3, second, forming an oxide film, (14) on the copper oxide release material, and third, preferentially etching away the copper oxide release material (12) to separate the oxide film (14) from the substrate (10). The oxide film (14) can be a ferroelectric or an optical material, or a material that is compatible with further high temperature superconductor growth, such as SrTiO3 or CeO2.
Patent•
14 Jul 1994
TL;DR: A glass composition consisting of silicon oxide, calcium oxide and aluminum oxide, and its use for producing gems is described in this paper. But it is not suitable for jewelry production, as shown in Figure 1.
Abstract: A glass composition substantially comprising silicon oxide, calcium oxide and aluminum oxide, and its use for producing gems.
TL;DR: In this paper, the degradation of thin oxide by polysilicon-diffused POCl3 and the reliability improvement by the silicon deposition method were studied, and the degradation is increased with the decrement of sheet resistance and poly-silicon thickness.
Abstract: The degradation of thin oxide by polysilicon-diffused POCl3 and the reliability improvement of thin oxide by the silicon deposition method were studied. Phosphorus in polysilicon-doped POCl3 degraded the thin oxide qualities. Oxide degradation is increased with the decrement of sheet resistance and polysilicon thickness. Insitu double deposition (IDD) of amorphous silicon and polysilicon at 540° C/30 nm and 625° C/220 nm, respectively, created a mismatched structure of the grain boundary at the interface. This structure suppresses the segregation of excess phosphorus on the oxide surface, thus maintaining the oxide property.
Patent•
24 Mar 1994TL;DR: In this paper, an oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer, and the oxide is oxidized after it is hydrogenated, which improves the superconducting characteristics of the oxide.
Abstract: of EP0617473An oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer. The oxide is hydrogenated. The oxide is oxidized after it is hydrogenated. The hydrogenation and the oxidization are executed simultaneously with or after the oxide is formed. The hydrogenation and the oxidization improve the superconducting characteristics of the oxide superconductor.