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Showing papers on "Graphene oxide paper published in 1996"


Patent
15 Mar 1996
TL;DR: An electrical interconnect device for a planar fuel cell, comprising solid oxide electrolyte (44), an anode and a cathode (42), is described in this article, where an intermediate spinel layer is formed by reaction of M oxide with surface chromium oxide on the substrate.
Abstract: An electrical interconnect device for a planar fuel cell, comprising solid oxide electrolyte (44), an anode and a cathode (42), is described. The interconnect device comprises a plate-like chromium-containing substrate (22) having gas-flow channels (28) on the cathode-side and a coating on the cathode-side. The coating comprises an oxide surface layer comprising at least one metal M selected from Mn, Fe, Co and Ni, and an M, Cr spinel layer intermediate the substrate and the oxide surface layer. The intermediate spinel layer is formed by reaction of M oxide with surface chromium oxide on the substrate. The coating material may be applied as oxide or as salt or metal, or a mixture, and then converted to oxide. The M-metal(s) may be mixed with non-M metal or be doped. Methods of application are described in which the oxide surface layer is partially reacted to form the intermediate spinel layer.

132 citations


Patent
Mie Matsuo1, Haruo Okano1, Nobuo Hayasaka1, Kyoichi Suguro1, Hideshi Miyajima1, Junichi Wada1 
06 Jun 1996
TL;DR: In this paper, a method of manufacturing a semiconductor device is described, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than the decrease in free energy of hydrogen oxide or carbon oxide.
Abstract: The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80° to 500° C.

61 citations


Patent
19 Nov 1996
TL;DR: In this article, a comparison of the properties of silver-iron materials for electrical switching contacts with properties which come very close to those of the silver-nickel materials formed of 0.5 to 4.5% by weight iron and 0.05 to 2% of one or more of the oxides magnesium oxide, calcium oxide, yttrium oxide, lanthanum oxide, titanium oxide, zirconium oxide, hafnium oxide and tin oxide.
Abstract: Silver-iron materials for electrical switching contacts with properties which come very close to those of silver-nickel materials formed of 0.5 to 4.5% by weight iron and 0.05 to 2% by weight of one or more of the oxides magnesium oxide, calcium oxide, yttrium oxide, lanthanum oxide, titanium oxide, zirconium oxide, hafnium oxide, cerium oxide, niobium oxide, tantalum oxide, chromium oxide, manganese oxide, iron oxide, zinc oxide, aluminum oxide, indium oxide, silicon oxide, and tin oxide, the balance being silver.

14 citations


Journal ArticleDOI
TL;DR: In this paper, the effect of alloying elements on the thickness of oxide layers was investigated using glow discharge optical emission spectrometry (GDOS) for characterizing thin oxide layers formed on binary alloys with aluminum, silicon, phosphorus, chromium, manganese, nickel and molybdenum.
Abstract: Glow discharge optical emission spectrometry (GDOS) has been used for characterizing thin oxide layers formed on iron-base binary alloys with aluminum, silicon, phosphorus, chromium, manganese, nickel and molybdenum by heating in air at 773 and 873 K. We focused on the enrichment of alloying elements in the thin oxide layers and substrates as well as the effect of alloying elements on the thickness of the oxide layers. It was found in the quantitative depth profiles that aluminum, silicon, phosphorus, chromium and nickel are enriched at the oxide/metal interface, while manganese is distributed to the oxide layer and molybdenum is observed neither at the oxide/metal interface nor in the oxide layer. It is also suggested that aluminum, silicon, chromium and molybdenum have a significant influence on the reduction in the thickness of the oxide layers, and the present results are in good agreement with structural data obtained by X-ray diffraction.

6 citations


Patent
05 Apr 1996
TL;DR: An oxide superconducting composite may be prepared by oxidizing the precursor composite under conditions effective to form solute metal oxide domains within the silver matrix and to form a precursor oxide in the precursor alloy phase as mentioned in this paper.
Abstract: An oxide superconductor composite having improved texture and durability. The oxide superconductor composite includes an oxide superconductor phase substantially surrounded with/by a noble metal matrix, the noble metal matrix comprising a metal oxide in an amount effective to form metal oxide domains that increase hardness of the composite. The composite is characterized by a degree of texture at least 10% greater than a comparable oxide superconductor composite lacking metal oxide domains. An oxide superconducting composite may be prepared by oxidizing the precursor composite under conditions effective to form solute metal oxide domains within the silver matrix and to form a precursor oxide in the precursor alloy phase; subjecting the oxidized composite to a softening anneal under conditions effective to relieve stress within the noble metal phase; and converting the oxide precursor into an oxide superconductor.

5 citations


Patent
Heidrun Potthast1, Bernd Schumann1
27 Jun 1996
TL;DR: In this article, a sensor for detecting flammable gases in a test gas is proposed, which consists essentially of a sensitive coating based on a semiconducting metal oxide, the electrical resistance of which indicates the concentration of flammability gases in the test gas, applied to a ceramic substrate.
Abstract: The proposal is for a sensor for detecting flammable gases in a test gas. It consists essentially of a sensitive coating based on a semiconducting metal oxide, the electrical resistance of which indicates the concentration of flammable gases in a test gas, applied to a ceramic substrate. The sensitive coating (3) proposed therefor has a composite (12) of sintered granules (15) of the semiconducting metal oxide, the surface of which is coated with gold and/or a gold alloy. The semiconducting metal oxide is tin oxide (SnO2), indium oxide (In2O3), titanium oxide (TiO2) or another n-semiconducting metal oxide or mixed oxide, and the gold alloy consists, for example, of 66 mol % gold and 33 mol % palladium (Pd).

5 citations


Patent
29 Jul 1996
TL;DR: In this paper, an oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer, and the oxide is oxidized after it is hydrogenated.
Abstract: An oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer. The oxide is hydrogenated. The oxide is oxidized after it is hydrogenated. The hydrogenation and the oxidization are executed simultaneously with or after the oxide is formed. The hydrogenation and the oxidization improve the superconducting characteristics of the oxide superconductor.

3 citations