Showing papers on "Graphene oxide paper published in 1999"

Oxide thin film

Abstract: An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.

Method for forming dual gate oxides on integrated circuits with advanced logic devices

Abstract: A process for significantly reducing the thickness of and improving the quality and uniformity of a native oxide film which is formed during the formation of MOSFET devices on a silicon wafer in a dual thickness gate oxide process. The native oxide forms on exposed silicon surfaces after selectively etching away regions of a first thicker gate oxide and prior to growing a thinner gate oxide. The thinner gate oxide used to form high performance devices is between about 15 and 50 Å thick. The native oxide which forms on the exposed silicon surfaces has an initial thickness of about 10 Å. After the selective regions have been patterned the wafer is cleaned using a totally HF free cleaning procedure and subjected to a low pressure rapid thermal annealing between about 600 and 1,050° C. in an ambient of H2 and N2. The residual oxide thickness is reduced to about 4 Å with an accompanying improvement in thickness uniformity and oxide quality. The residual film is more robust that the initial native oxide and forms a much smaller thickness component of the final thinner gate oxide. After the annealing treatment, the residual native oxide becomes a more robust form of silicon oxide.

Methods of fabricating an integrated circuit device with composite oxide dielectric

Abstract: A method of fabricating an integrated circuit device includes forming a first metal oxide layer adjacent a semiconductor substrate. The first metal oxide layer may be formed of tantalum oxide, for example. A second metal oxide layer, which includes an oxide with a relatively high dielectric constant such as titanium oxide, zirconium oxide, or ruthenium oxide, is formed on the first metal oxide layer opposite the semiconductor substrate, and a metal nitride layer, such as titanium nitride, is formed on the metal oxide layer opposite the first metal oxide layer. The metal nitride layer includes a metal which is capable of reducing the metal oxide of the first metal oxide layer. Thus, the second metal oxide layer substantially blocks reduction of the metal oxide of the first metal oxide layer by the metal of the metal nitride layer.

Ultrathin silicon oxide film on Si(100) fabricated by highly concentrated ozone at atmospheric pressure

Abstract: We have investigated ultrathin silicon oxide film growth by highly concentrated ozone at atmospheric pressure. Oxide film >2 nm was grown on as-received Si(100) even at room temperature. The etching rate by dilute hydrofluoric acid solution of oxide fabricated on Si(100) at 350 °C by this method was almost the same as that of thermally grown oxide so that film density is equivalent to that of thermally grown oxide. The etching rate of this film also shows no dependence on the film depth. This is indicating that the transition layer due to the lattice mismatch of substrate and oxide is limited within a thinner region than that of thermally grown oxide. It also indicates that an oxide film with higher film density can be synthesized on the surface with preoxide film already formed to protect bare substrate surfaces.

Charge transport in thin interpoly nitride/oxide stacked films

Abstract: In this work, charge transport through interpoly thin nitride/oxide stacked films, including nitride/oxide dual- and oxide/nitride/oxide tri-layer films, was studied. Extensive experimental results, concerning current conduction in single oxide layer, single nitride layer, nitride/oxide dual-layer, and oxide/nitride/oxide tri-layer films are presented. An effective investigation of the various mechanisms that can explain current conduction and charge trapping in these dielectrics was performed. To this aim, different approaches to transport modeling, namely, a classical current continuity model, a transmission model, and a two-step trap assisted model are proposed. The gains and trade offs offered by each model are pointed out. A comprehensive model for the conduction mechanisms in thin nitride/oxide stacked films is proposed.

Oxide transparent conductive film, target for forming the same, method of manufacturing substrate having oxide transparent conductive film, electronic equipment and liquid crystal display unit

Abstract: PROBLEM TO BE SOLVED: To provide an oxide transparent conductive film capable of being finely etched in weak acid, having low connection resistance, superior in light transmittance, having low resistance in connecting TCP and free from fluctuation of resistance over aging, a target for manufacturing the same, and a method of manufacturing a substrate having the oxide transparent conductive film. SOLUTION: This oxide transparent conductive film 6 is composed of a composite oxide containing indium oxide, tin oxide and zinc oxide, and has at least a connecting part 6a with another conductor, and a content of tin is more than that of zinc in the connecting part, and the connecting part has crystallinity. This target is composed of the composite oxide. Further, this method of manufacturing a substrate comprises forming a film of the composite oxide, and etching, patterning and afterwards heat-treating the same to obtain a substrate 2 having the oxide transparent conductive film 6 of low connecting resistance.

Observation of critical gate oxide thickness for substrate-defect related oxide failure

Abstract: The presence of crystal originated particles in silicon substrates leads to gate oxide failures in metal–oxide–semiconductor devices. A nonlinear relationship is known to exist between the oxide defect density and the oxide thickness, but the mechanism behind this remains unclear. In this work, we evaluate the gate oxide integrity for oxide thicknesses ranging from 2.5 to 26.5 nm. The results show no appreciable oxide degradation below an oxide thickness of approximately 5 nm; above this threshold value, the defect density depends strongly on the presence of crystal originated particles. Oxide thinning is unlikely to be responsible for this behavior.

Conductive metal oxide based layer

Abstract: A conductive metal oxide based layer on a substrate is prepared by chemically reducing a metal salt in aqueous solution, coating the resulting aqueous metal dispersion after washing onto a substrate, preferably glass, and subjecting the coated layer to an oxidizing treatment, e.g. a heat step. In a preferred embodiment the metal oxide is tin oxide, or a mixture of tin oxide and another metal oxide.

Optical glass containing silicon oxide and boron oxide

Abstract: Optical glass contains silicon oxide and boron oxide with a refractive index of at least 1.7 and an Abbe number of 28-41. The ratio of silicon oxide to boron oxide content is more than 0.78. The glass has a contact angle of at least 40 deg towards platinum or platinum alloy at a temperature equivalent to or higher than its liquidus point. An Independent claim is also included for a process for forming precision molded materials from the optical glass.

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

Abstract: The electrical properties of thick oxide layers onn andp-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ~ 3000 A thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm onn-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.