Showing papers on "Graphene oxide paper published in 2000"

Preparation and characterization of poly(vinyl acetate)-intercalated graphite oxide nanocomposite

Abstract: Graphite oxide, a pseudo-two-dimensional solid in bulk form, was synthesized from natural graphite powder by graphite oxidation with KMnO4 in concentrated H2SO4. Poly(vinyl acetate) intercalated graphite oxide nanocomposite was prepared by an in situ intercalative polymerization reaction, in which an n-octanol–graphite oxide intercalation compound was first obtained, vinyl acetate monomer was then dispersed into the interlayer of the modified graphite oxide, followed by thermally polymerizing the monomer. It was experimentally shown that the c-axis spacing increased to 1.152 nm when poly(vinyl acetate) was intercalated into the interlayer space of the graphite oxide. Thermal analysis and FT-IR spectrometry were also used to characterize the nanocomposite. The extractability of the intercalated poly(vinyl acetate) and the electrical properties of the nanocomposite were evaluated.

Method for forming film by atomic layer epitaxial growing method

Abstract: PROBLEM TO BE SOLVED: To realize a layer structure in which aluminum oxide and titanium oxide are separated and do not mix each other, in a film forming method in which an insulating membrane is formed by alternately laminating the aluminum oxide and the titanium oxide by using an ALE method. SOLUTION: This method for forming a film is provided by setting a base substrate temperature at which the aluminum oxide and the titanium oxide do not mix with each other based on the aimed film thickness of the aluminum oxide and the titanium oxide by utilizing a phenomenon in that when the film thickness of the titanium oxide becomes smaller, then the base substrate temperature so as not to mix the titanium oxide with the aluminum oxide, becomes higher and a conditional zone R1 for realizing such layer structure having the separated aluminum oxide and titanium oxide, moves to high temperature side, and forming the film at the above set base substrate temperature.

Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets

Abstract: A method and article of manufacture of an ultra-thin base oxide or nitrided oxide layer in a CMOS device. The method and article of manufacture are formed by providing a silicon wafer with an initial oxide layer which is removed from the silicon wafer by a hydrogen baking step. A new oxide layer or nitrided oxide layer is formed by thermal growth on the silicon wafer surface. A portion of the new oxide layer is removed by hydrogen annealing. A MOSFET can be created by forming a gate electrode structure on a high-k dielectric material deposited on the new oxide layer.

Optimization of black oxide coating thickness as adhesion promoter for copper substrate

Abstract: Black oxide is a conversion coating applied to a copper surface to improve the interface adhesion with polymeric adhesives and moulding compounds. State-of-the-art analytical instruments, including SEM, TEM, XPS, AFM, XRD, goniometry, dynamic SIMS and RBS were employed to characterize the coated surface and interfaces with glob top resins. It was found that the copper oxide layer consists of cupric and cuprous oxides with a continuous change of oxide composition from the top surface to the inside without a distinct boundary in between. Crystallinity of the oxides was barely detected directly from the black oxide coated copper. The cupric oxide exists in the form of a long, fibril structure on nanoscopic scale. The interface bond strength between the copper oxide and glob-top resin increased rapidly in the low range of oxide thickness and became almost constant with further increase in oxide thickness. A functionally similar dependence of oxide thickness and interface adhesion on treatment time was also revealed. Fracture occurred mainly within the oxide layer for black oxide coated substrates (i.e. cohesive failure of black oxide), while fracture tended to occur along the coating-resin interface (i.e. adhesive failure) once the coated surface is debleeded by sandblasting.

Oxide superconductor wire material, and manufacturing method of the same

Abstract: PROBLEM TO BE SOLVED: To provide an oxide superconductor wire material having stable and excellent crystalline property at its whole lengthened part, with an oxide superconductor film showing high critical current density, and to provide a manufacturing method of the same. SOLUTION: For the oxide superconductor wire material comprising a polycrystalline metal base (1) having an aggregation structure oriented to {100} direction, oxide buffer layers (2, 3) formed on the polycrystalline metal base (1), and an oxide superconductor layer (4) formed on the oxide buffer layer (2, 3), the oxide buffer layer (2, 3) is composed of the first oxide buffer layer (2) with a surface coarseness of Rmax=0.15 μm or less which is a surface oxide layer of the polycrystalline metal base (1), and the second oxide buffer layer (3) formed on the first oxide buffer layer (2). COPYRIGHT: (C)2002,JPO

Coloring matter sensitizing solar battery and its manufacturing method

Abstract: PROBLEM TO BE SOLVED: To provide a coloring matter sensitizing solar battery, capable of preventing an electron moved into an oxide semiconductor electrode material from reacting with an electrolyte, preventing a release voltage from lowering, and enhancing energy transfer efficiency. SOLUTION: In the coloring matter sensitizing solar battery, at least part of an oxide semiconductor particle (oxide semiconductor electrode material) 27 forming an oxide semiconductor electrode 22 is coated with a metal oxide film 26 made of at least one kind of an aluminum oxide, magnesium oxide, nickel oxide, chromium oxide, manganese oxide, copper oxide, germanium oxide, gallium oxide, and zirconium oxide. The oxide semiconductor corpuscle 27 preferably comprises at least one kind of tin oxide particle and tin oxide particle containing antimony, or a zinc oxide particle, at least a part of the surface of which is coated with at least one kind of a tin oxide particle and a tin oxide particle containing antimony.

New coated metal particles, especially for producing bone prostheses, cosmetic additives, catalysts and fuel cell electrodes, comprise fine metal cores coated with an oxide not based on the metal core main component

Abstract: Coated metal particles, comprising fine metal core particles coated with an oxide, complex oxide or oxy-acid salt not based on the metal core main component. Novel oxide coated metal particles comprise fine metal core particles, each coated with a layer of an oxide, a complex oxide or an oxy-acid salt, which does not contain a main component of the core as main component, or of a complex oxide or complex salt of this oxide, complex oxide or oxy-acid salt and an oxide of the metal element. An Independent claim is also included for production of the above oxide coated fine metal particles by mixing fine metal powder with oxide powder, introducing into a thermal plasma to form a vapor phase mixture and then quenching.

Research on the Synthesis and Structure of Graphite Oxide

Abstract: Graphite oxide was synthesized from natural graphite powder by graphite oxidation with KMnO_4 in concentrated H_2SO_4 according to Hummers method. The component and structure of graphite oxide were investigated in detail, had on the results of IR, XRD, TG and DSC measurements. The results shows that graphite oxide possesses hydroxyl, carbonyl and other groups between the graphite Oxide lamellae. Due to the presence of these polar groups, various kinds of polar molecules and polar polymer can be inserted into the lamellae to form different kinds of intercalated graphite oxide nanocomposites.

Method for etching bismuth-containing oxide films

Abstract: The invention relates to a method for etching oxide films containing at least one bismuth oxide, especially a mixed ferroelectric oxide containing bismuth. The inventive method comprises the following steps: a) providing a substrate to which, at least one oxide film is applied, comprising at least one oxide containing bismuth; b) an etching solution is brought into contact with the substrate so that the solution can react with the oxide film, whereby the etching solution contains 2 -20 wt. % of a fluoride ion-donor, 15 -60 wt. % nitric acid and 20 -83 wt. % water; c) the etching solution is removed from the substrate. Said etching solution is also used in a method for structuring oxide films containing bismuth.

Methods for improved encapsulation of thick metal features in integrated circuit fabrication

Abstract: The present invention provides a method of manufacturing an integrated circuit having a capping layer over a thick metal feature In one embodiment, the method comprises forming first and second oxide layers over the thick metal feature, forming a composite oxide layer including an oxide spacer by etching the first and second oxide layers, and forming a capping layer over the composite oxide layer More specifically, forming the first oxide layer involves using a high density plasma (HDP) process, forming the second oxide layer involves using a plasma enhanced chemical vapor deposition (PECVD) process, and forming the composite oxide layer preferably involves etching with a reactive ion etch

Integrated circuit device with composite oxide dielectric

Abstract: An integrated circuit device includes a semiconductor substrate and a first metal oxide layer adjacent the substrate. The first metal oxide layer may be formed of tantalum oxide, for example. A second metal oxide layer, which includes an oxide with a relatively high dielectric constant such as titanium oxide, zirconium oxide, or ruthenium oxide, is formed on the first metal oxide layer opposite the semiconductor substrate, and a metal nitride layer, such as titanium nitride, is formed on the metal oxide layer opposite the first metal oxide layer. The metal nitride layer includes a metal which is capable of reducing the first metal oxide layer. Thus, the second metal oxide layer substantially blocks reduction of the first metal oxide layer by the metal of the metal nitride layer.

Oxide superconductor, method of manufacture thereof, and base material of oxide superconductor

Abstract: A superconductor comprises a base material (1) consisting of a refractory metal, one or more intermediate oxide layers (2, 3) formed over the base material (1), and a thick superconducting oxide layer (5) formed on the intermediate oxide layers (2, 3) by a liquid-phase epitaxy method in which the base material (1) with the intermediate oxide layers (2, 3) is dipped in a solution (7) containing the elements of the superconducting oxide layers.

Fabrication and Material Properties of Ru - Sn - Ti Ternary Mixed Oxide / Ti Electrode ( 1 )

Abstract: Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrodes was tested for Ru, Ru-Sn, Ru-Sn-Ti oxide on the Ti substrate, and various physical and material characteristics of the oxide electrodes and an adhesive degree of the oxides to the substrate were examined with changes of sintering temperature, com- position of metal oxides, and etching condition, using TGA, AES, XPS, EPMA, SEM and a tape test. The degree of non-sto- chiometry in the oxide, being attributed to the catalytic property of the oxide electrode, was evaluated. The etching condition of Ti substrate was found to have a severe effect on the fabrication reproducibility, the surface morphology, and the amount of oxide coated on the substrate of the oxide electrode. The metal oxide sintered below 600 o C was confirmed to have a non-sto- chiometric compound of MO2-x (0