Hafnium

About: Hafnium is a research topic. Over the lifetime, 3719 publications have been published within this topic receiving 53879 citations. The topic is also known as: Hf & element 72.

Refractory Diborides of Zirconium and Hafnium

Abstract: This paper reviews the crystal chemistry, synthesis, densification, microstructure, mechanical properties, and oxidation behavior of zirconium diboride (ZrB2) and hafnium diboride (HfB2) ceramics. The refractory diborides exhibit partial or complete solid solution with other transition metal diborides, which allows compositional tailoring of properties such as thermal expansion coefficient and hardness. Carbothermal reduction is the typical synthesis route, but reactive processes, solution methods, and pre-ceramic polymers can also be used. Typically, diborides are densified by hot pressing, but recently solid state and liquid phase sintering routes have been developed. Fine-grained ZrB2 and HfB2 have strengths of a few hundred MPa, which can increase to over 1 GPa with the addition of SiC. Pure diborides exhibit parabolic oxidation kinetics at temperatures below 1100°C, but B2O3 volatility leads to rapid, linear oxidation kinetics above that temperature. The addition of silica scale formers such as SiC or MoSi2 improves the oxidation behavior above 1100°C. Based on their unique combination of properties, ZrB2 and HfB2 ceramics are candidates for use in the extreme environments associated with hypersonic flight, atmospheric re-entry, and rocket propulsion.

High dielectric constant gate oxides for metal oxide Si transistors

Abstract: The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (14?nm) that its leakage current is too large It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (?) or 'high K' gate oxides such as hafnium oxide and hafnium silicate These oxides had not been extensively studied like SiO2, and they were found to have inferior properties compared with SiO2, such as a tendency to crystallize and a high density of electronic defects Intensive research was needed to develop these oxides as high quality electronic materials This review covers both scientific and technological issues?the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure and reactions, their electronic structure, bonding, band offsets, electronic defects, charge trapping and conduction mechanisms, mobility degradation and flat band voltage shifts The oxygen vacancy is the dominant electron trap It is turning out that the oxides must be implemented in conjunction with metal gate electrodes, the development of which is further behind Issues about work function control in metal gate electrodes are discussed

High dielectric constant oxides

Abstract: The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2 ,s uch as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high K oxides in capacitors of dynamic random access memories is also covered.

Hafnium and zirconium silicates for advanced gate dielectrics

Abstract: Hafnium and zirconium silicate (HfSixOy and ZrSixOy, respectively) gate dielectric films with metal contents ranging from ∼3 to 30 at. % Hf, or 2 to 27 at. % Zr (±1 at. % for Hf and Zr, respectively, within a given film), have been investigated, and films with ∼2–8 at. % Hf or Zr exhibit excellent electrical properties and high thermal stability in direct contact with Si. Capacitance–voltage measurements show an equivalent oxide thickness tox of about 18 A (21 A) for a 50 A HfSixOy (50 A ZrSixOy) film deposited directly on a Si substrate. Current–voltage measurements show for the same films a leakage current of less than 2×10−6 A/cm2 at 1.0 V bias. Hysteresis in these films is measured to be less than 10 mV, the breakdown field is measured to be EBD∼10 MV/cm, and the midgap interface state density is estimated to be Dit∼1–5×1011 cm−2 eV−1. Au electrodes produce excellent electrical properties, while Al electrodes produce very good electrical results, but also react with the silicates, creating a lower e l...

Less Common Metals

Abstract: A-review is given on developments and improvements in process technology for fabricating beryllium, chromium, hafnium, molybdenum, niobium, rhenium, tantalum, tungsten, and zirconium. The references given cover the period June 1960 through May 1961. (N.W.R.)