Topic
Half-metal
About: Half-metal is a research topic. Over the lifetime, 416 publications have been published within this topic receiving 12445 citations.
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01 Jan 2014
TL;DR: In this article, a review about the progress and the strategy in solving the conductive mismatch between the ferromagnetic contact and the semiconductor is given and a new spinFET prototype is referred to in this paper.
Abstract: Spintronics as a potential solution to substitute the current CMOS technology, has attracted great attentions in the past decade, due to its increased functionality of nonvolatility and low power dissipation. To this end, it is extremely urgent and essential to achieve high efficient spin injection/detection between ferromagnetic contact and semiconductor with manipulable spin transport in semiconductor with long spin lifetime and diffusion length. The main obstacle for high efficient spin injection comes from the conductive mismatch between the ferromagnetic contact and semiconductor. In this paper, we give a review about the progress and the strategy in solving such critical problem. It refers to the substitution of ferromagnetic metal by half metal or diluted magnetic semiconductor, introducing appropriate Schottky barrier and various types of tunneling oxides. To increase the spin lifetime and diffusion length, the semiconductor nanostructure is found to be much more favorable compared to the bulk and thin film. Furthermore, a new spinFET prototype will be referred to in this paper.
30 Oct 2019
TL;DR: In this paper, the spin-mixing conductance of a half metal and a normal metal is analyzed and it is shown that the spin mixing strongly influences the spindependent transport near the interface, and therefore reduces the spin polarization of the half metal.
Abstract: Half metal is a ferromagnetic metal that act as a conductor to electrons with of one spin orientation, while act as an insulator for the opposite spin. Because of this high spin-dependent property, half metals are widely studied in spiritroriics area. This property can be represented by the spin polarization P = (G↑ — G↓ ) / (G↑ + G↓ ) of its spin-dependent conductances G↑,↓. The value of P of an ideal half metal is 1. However, the value of P is reduced when it is attached to other material. We study how the spin current generations that occurs at the interface of half metal and normal metal reduces the value P. At the interface of a half metal and a normal metal a spin current can be pumped from the ferromagnetic layer to the normal metal. This spin pumping effect is characterized by spin-mixing conductance, which represents the magnitude of the generated spin current due to the mixing of electrons with spin up and down. By analyzing the coupling of spin and electric currents in the interface of half metal and normal metal, we show that the spin mixing strongly influences the spin-dependent transport near the interface, and therefore reduces the spin polarization of the half metal.
TL;DR: In this paper , the stability, structural, electronic and magnetic properties of the doped Heusler compounds Co2MnGa1−xAlx with (x= 0, 0.25, 0., 0.50 and 0.75) were studied theoretically by using first-principles density functional theory within the generalized gradient approximation scheme.
Abstract: Abstract: The stability, structural, electronic and magnetic properties of the doped Heusler compounds Co2MnGa1−xAlx with (x= 0, 0.25, 0.50, 0.75 and 1) were studied theoretically by using first-principles density functional theory within the generalized gradient approximation (GGA) scheme. The magnetic state is found to be energetically more favorable than the non-magnetic one. The calculated results reveal that with increasing Al concentration, the lattice parameter slightly decreases. Furthermore, the calculated densities of states for Co2MnGa, Co2MnAl and Co2MnGa1-xAlx (x = 0.25, 0.50 and 0.75) show a half-metallic behavior.
Keywords: Heusler, Half metallic, Co-based heusler, Magnetic moment.
Dissertation•
01 Jan 2016
Patent•
16 Mar 2017
TL;DR: In this article, the authors proposed a tunnel magnetoresistive element that can be configured by changing the number of spins in the half-metal magnetoresistance between two half metal ferromagnetic layers with an insulator layer interposed there between.
Abstract: PROBLEM TO BE SOLVED: To provide a structure for dynamically controlling a magnetic property of a half metal material externally, and a tunnel magnetoresistive device using the same.SOLUTION: When electrons are injected into a half metal ferromagnetic substance, the total number of spins in the material is changed, and a magnetic property changes. Specifically, when a half metal ferromagnetic substance layer, an ion (e.g., Li) conduction medium layer, and an electrode functioning as an ion supply source are laminated in this order and a positive voltage is applied to an electrode side, ion (positive ions) are injected into the ferromagnetic layer, and electrons are also injected. The magnetic property is changed in the half metal magnetic substance layer by the electron injection. A tunnel magnetoresistive element can be configured by controlling tunnel magnetoresistance between two half metal ferromagnetic substance layers with an insulator layer interposed therebetween.SELECTED DRAWING: Figure 3