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High-electron-mobility transistor

About: High-electron-mobility transistor is a research topic. Over the lifetime, 11597 publications have been published within this topic receiving 155571 citations. The topic is also known as: HEMT & heterostructure FET.


Papers
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Journal ArticleDOI
12 Jun 1998-Science
TL;DR: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor driving a polymer light-emitting diode (LED) of similar size, which represents a step toward all- polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.
Abstract: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10 6 . The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.

2,657 citations

Journal ArticleDOI
07 Nov 2002
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Abstract: Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

1,849 citations

Journal ArticleDOI
16 Sep 2010-Nature
TL;DR: On-chip microwave measurements demonstrate that the self-aligned graphene transistors have a high intrinsic cut-off (transit) frequency of fT = 100–300 GHz, with the extrinsic fT largely limited by parasitic pad capacitance.
Abstract: Graphene has attracted considerable interest as a potential new electronic material. With its high carrier mobility, graphene is of particular interest for ultrahigh-speed radio-frequency electronics. However, conventional device fabrication processes cannot readily be applied to produce high-speed graphene transistors because they often introduce significant defects into the monolayer of carbon lattices and severely degrade the device performance. Here we report an approach to the fabrication of high-speed graphene transistors with a self-aligned nanowire gate to prevent such degradation. A Co(2)Si-Al(2)O(3) core-shell nanowire is used as the gate, with the source and drain electrodes defined through a self-alignment process and the channel length defined by the nanowire diameter. The physical assembly of the nanowire gate preserves the high carrier mobility in graphene, and the self-alignment process ensures that the edges of the source, drain and gate electrodes are automatically and precisely positioned so that no overlapping or significant gaps exist between these electrodes, thus minimizing access resistance. It therefore allows for transistor performance not previously possible. Graphene transistors with a channel length as low as 140 nm have been fabricated with the highest scaled on-current (3.32 mA μm(-1)) and transconductance (1.27 mS μm(-1)) reported so far. Significantly, on-chip microwave measurements demonstrate that the self-aligned devices have a high intrinsic cut-off (transit) frequency of f(T) = 100-300 GHz, with the extrinsic f(T) (in the range of a few gigahertz) largely limited by parasitic pad capacitance. The reported intrinsic f(T) of the graphene transistors is comparable to that of the very best high-electron-mobility transistors with similar gate lengths.

1,227 citations

Patent
24 Jun 2003
TL;DR: In this article, a gate electrode is formed on the gate insulating layer, and a source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings.
Abstract: A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride/aluminum gallium nitride (AlN/AlGaN) or magnesium zinc oxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a silicon metal oxide semiconductor field effect transistor (Si-MOS-type FET), resulting in the formation of an inversion layer.

1,048 citations

Journal ArticleDOI
TL;DR: In this article, a short channel High Electron Mobility Transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device.
Abstract: We show that a short channel High Electron Mobility Transistor (HEMT) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. This response can be used for new types of detectors, mixers, and multipliers. These devices should operate at much higher frequencies than conventional, transit-time limited devices, since the plasma waves propagate much faster than electrons. The responsivities of such devices may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in the terahertz range. A long channel HEMT has a nonresonant response to electromagnetic radiation and can be used as a broadband detector for frequencies up to several tens of terahertz.

986 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023421
2022901
2021420
2020498
2019550
2018493