Homojunction

Abstract: The development of a compact, solid-state light-emitting diode (LED) that emits at 210 nanometres — the shortest wavelength yet achieved for any type of LED — represents an important step towards achieving exciton-related light-emitting devices and replacing inefficient gas light sources with solid-state light sources. Compact high-efficiency ultraviolet solid-state light sources1—such as light-emitting diodes (LEDs) and laser diodes—are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond2 and III–V nitride semiconductors (GaN, AlGaN and AlN; refs 3–10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap11 of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Abstract: Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and metallic monoclinic (1T') molybdenum ditelluride (MoTe2) that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 10(6). In situ scanning transmission electron microscopy results combined with theoretical calculations reveal that the Te vacancy triggers the local phase transition in MoTe2, achieving a true 2D device with an ohmic contact.

Abstract: to improve the structural properties of n- and p-type ZnO compared to previous studies. [7] In addition, a thermal annealing process was carried out to activate the phosphorus dopants in p-type ZnO and improve the electrical and optical properties of the ZnO layers. The LED showed excellent current-rectifying behavior with a threshold voltage of 3.2 V and an EL emission peak at 380 nm at room temperature. The UV EL emission spectrum was in good agreement with the room-temperature photoluminescence (PL) spectrum of the p-type ZnO used in the LED. Furthermore, the near-bandedge emission was increased and the deep-level emission was decreased when (Mg,Zn)O alloy layers were introduced as energy barrier layers between n-type and p-type ZnO films to confine the carrier recombination process to the high-quality n-type ZnO film. A schematic diagram of the p–n homojunction ZnO LED is shown in Figure 1. The gallium-doped n-type ZnO with a thickness of 1.5 lm was grown on a c-Al2O3 substrate. It

Abstract: With a global market share of about 90%, crystalline silicon is by far the most important photovoltaic technology today. This article reviews the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective. First, it discusses key factors responsible for the success of the classic dopant-diffused silicon homojunction solar cell. Next it analyzes two archetypal high-efficiency device architectures – the interdigitated back-contact silicon cell and the silicon heterojunction cell – both of which have demonstrated power conversion efficiencies greater than 25%. Last, it gives an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrier-selective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic–inorganic perovskite materials.

Abstract: Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes (LEDs) and laser diodes (LDs). It is easy to obtain strong n-type ZnO, but very difficult to create consistent, reliable, high-conductivity p-type material. The most natural choice of an acceptor dopant is N, substituting for O, and indeed several groups have been able to obtain p-type material by such doping. Surprisingly, however, other groups have also been successful with P and As, elements with much larger ionic radii than that of O. Although ZnO substrates are now available, most of the epitaxial p-type layers so far have been grown on sapphire, or other poorly-matched materials. The lowest p-type resistivity obtained up to now is about 0.5 Ω-cm, which should be sufficient for LED fabrication. In spite of the present availability of p-type ZnO, very few homojunction LEDs have been reported so far, to our knowledge; however, several good heterojunction LEDs have been demonstrated, fabricated with p-type layers composed of other materials. One such structure, with fairly strong 389-nm emission at 300 K, involves n-type ZnO and p-type AlGaN, grown on an SiC substrate. Also, an N + -ion implanted ZnO layer, deposited by chemical vapor deposition on Al 2 O 3 , exhibits 388-nm emission at 300 K and could be economical to produce.