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Hysteresis

About: Hysteresis is a research topic. Over the lifetime, 16895 publications have been published within this topic receiving 316343 citations.


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Journal ArticleDOI
TL;DR: The first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step is reported, and it is posited that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteResis and unstable diode behaviour.
Abstract: Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite-PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3(-) antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.

954 citations

Journal ArticleDOI
23 May 2012-ACS Nano
TL;DR: Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.
Abstract: Field effect transistors using ultrathin molybdenum disulfide (MoS2) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS2 devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS2 field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS2. Uniform encapsulation of MoS2 transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

951 citations

Journal ArticleDOI
TL;DR: For example, first-order reversal curves (FORC) diagrams as mentioned in this paper can be used to identify and discriminate between the different components in a mixed magnetic mineral assemblage, such as superparamagnetic, single-domain, and multidomain grains.
Abstract: Paleomagnetic and environmental magnetic studies are commonly conducted on samples containing mixtures of magnetic minerals and/or grain sizes. Major hysteresis loops are routinely used to provide information about variations in magnetic mineralogy and grain size. Standard hysteresis parameters, however, provide a measure of the bulk magnetic properties, rather than enabling discrimination between the magnetic components that contribute to the magnetization of a sample. By contrast, first-order reversal curve (FORC) diagrams, which we describe here, can be used to identify and discriminate between the different components in a mixed magnetic mineral assemblage. We use magnetization data from a class of partial hysteresis curves known as first-order reversal curves (FORCs) and transform the data into contour plots (FORC diagrams) of a two-dimensional distribution function. The FORC distribution provides information about particle switching fields and local interaction fields for the assemblage of magnetic particles within a sample. Superparamagnetic, single-domain, and multidomain grains, as well as magnetostatic interactions, all produce characteristic and distinct manifestations on a FORC diagram. Our results indicate that FORC diagrams can be used to characterize a wide range of natural samples and that they provide more detailed information about the magnetic particles in a sample than standard interpretational schemes which employ hysteresis data. It will be necessary to further develop the technique to enable a more quantitative interpretation of magnetic assemblages; however, even qualitative interpretation of FORC diagrams removes many of the ambiguities that are inherent to hysteresis data.

891 citations

01 Jan 1991
TL;DR: A new approach to the scalar Preisach model of hysteresis, which emphasizes its phenomenological nature and mathematical generality, is described in this paper, which gives the necessary and sufficient conditions for the representation of actual hystresis nonlinearities by the scalareach model.
Abstract: A new approach to the scalar Preisach model of hysteresis, which emphasizes its phenomenological nature and mathematical generality, is described. The theorem, which gives the necessary and sufficient conditions for the representation of actual hysteresis nonlinearities by the scalar Preisach model, is reported. The significance of this theorem is that it establishes the limits of applicability of Preisach's model regardless of the physical nature of hysteresis. Then, the vector Preisach models are formulated and some basic properties of these models are briefly summarized. Numerical implementations of Preisach's models are discussed and some computational results are given.

878 citations

Journal ArticleDOI
TL;DR: In this paper, the impact factors on the hysteresis loops are discussed based on recent developments in ferroelectric and related materials, including the effect of materials (grain size and grain boundary, phase and phase boundary, doping, anisotropy, thickness), aging, and measurement conditions (applied field amplitude, fatigue, frequency, temperature, stress), which can affect the hysteretic behaviors of the ferroelectrics.
Abstract: Due to the nature of domains, ferroics, including ferromagnetic, ferroelectric, and ferroelastic materials, exhibit hysteresis phenomena with respect to external driving fields (magnetic field, electric field, or stress). In principle, every ferroic material has its own hysteresis loop, like a fingerprint, which contains information related to its properties and structures. For ferroelectrics, many characteristic parameters, such as coercive field, spontaneous, and remnant polarizations can be directly extracted from the hysteresis loops. Furthermore, many impact factors, including the effect of materials (grain size and grain boundary, phase and phase boundary, doping, anisotropy, thickness), aging (with and without poling), and measurement conditions (applied field amplitude, fatigue, frequency, temperature, stress), can affect the hysteretic behaviors of the ferroelectrics. In this feature article, we will first give the background of the ferroic materials and multiferroics, with an emphasis on ferroelectrics. Then it is followed by an introduction of the characterizing techniques for the loops, including the polarization–electric field loops and strain–electric field curves. A caution is made to avoid misinterpretation of the loops due to the existence of conductivity. Based on their morphologic features, the hysteresis loops are categorized to four groups and the corresponding material usages are introduced. The impact factors on the hysteresis loops are discussed based on recent developments in ferroelectric and related materials. It is suggested that decoding the fingerprint of loops in ferroelectrics is feasible and the comprehension of the material properties and structures through the hysteresis loops is established.

869 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20241
2023943
20221,945
2021672
2020650
2019640