IMPATT diode

About: IMPATT diode is a research topic. Over the lifetime, 1295 publications have been published within this topic receiving 12298 citations.

GaN IMPATT diode: a photo-sensitive high power terahertz source

Abstract: The prospects of wurtzite phase single-drift-region (SDR), flat and single-low-high-low (SLHL) type GaN IMPATT devices as terahertz sources are studied through a simulation experiment. The study indicates that GaN IMPATT diodes are capable of generating high RF power (at least 2.5 W) at around 1.45 THz with high efficiency (17–20%). The superior electronic properties of GaN make this a promising candidate for IMPATT operation in the THz regime, unapproachable by conventional Si, GaAs and InP based IMPATT diodes. The effect of parasitic series resistance on the THz performance of the device is further simulated. It is interesting to note that the presence of a charge bump in a flatly doped SDR structure reduces the value of parasitic series resistance by 22%. The effects of photo- illumination on the devices are also investigated using a modified double iterative simulation technique. Under photo-illumination (i) the negative conductance and (ii) the negative resistance of the devices (both flat and SLHL) decrease, while the frequency of operation and the device quality factor shift upwards. However, the upward shift in operating frequency is found to be more (~16 GHz) in the case of the SLHL SDR IMPATT device. The study indicates that GaN IMPATT is a promising opto-sensitive high power THz source.

A 90-GHz double-drift IMPATT diode made with Si MBE

Abstract: For the first time silicon double-drift IMPATT structures have been grown completely by Si molecular-beam epitaxy. The n-type layers are grown at 750 °C on low-resistivity n+-type substrates followed by p-type layers at 650 °C. The highly doped p+-layers are grown by solid-phase epitaxy in the MBE system. Device design is made for CW operation in W-band. The material is investigated by inspection of beveled samples, defect etching, TEM, SIMS, and spreading resistance measurements. Double-drift flat-profile diodes are housed and mounted employing a technological procedure approved for single-drift diodes. For initial device characterization, dc measurements are performed. Information about doping profile, series, and thermal resistances is obtained. Preliminary RF measurements delivered a maximum output power of 600 mW at 94 GHz with 6.7-percent efficiency from an unoptimized structure.

Silicon-based millimeter-wave devices

Abstract: 1. Fundamentals.- 1.1 Silicon as the Base Material for MMICs.- 1.2 Linear Passive Planar Millimeter Wave Circuits on Silicon.- 1.2.1 Wave Propagation in Planar Structures.- 1.2.2 Planar Transmission Lines.- 1.2.3 Planar Transmission-Line Discontinuities.- 1.2.4 Planar Resonators.- 1.3 Planar Millimeter-Wave Antennas on Silicon.- 1.3.1 Antenna Elements.- 1.3.1 Antenna Arrays.- 1.4 Planar Millimeter-Wave Circuits Containing Active and Nonlinear Elements.- 1.5 Appendix: Closed-Form Expressions for Transmission-Line Characteristics.- References.- 2. Transit-Time Devices.- 2.1 Principles of Transit-Time-Induced Negative Resistance.- 2.2 Injection Mechanisms.- 2.2.1 Impact Ionisation - IMPATT Diode.- 2.2.2 Thermionic Emission - BARITT Diode.- 2.2.3 Tunnel Injection.- 2.2.4 The Misawa Mode.- 2.3 Numerical Large-Signal Simulations.- 2.4 Skin Effect.- 2.5 Thermal Properties.- 2.5.1 Integrated Transit-Time Devices.- 2.5.2 Diamond Heat Sinks.- 2.5.3 Ring Diodes.- 2.5.4 Transient Thermal Resistance.- 2.5.5 Measurement of the Thermal Resistance.- 2.6 Design Constraints.- 2.7 Technology.- 2.7.1 Material Growth.- 2.7.2 Contacts.- 2.7.3 Handling Techniques.- 2.7.4 Packaging.- 2.8 Performance.- 2.8.1 Power.- 2.8.2 Efficiency.- 2.8.3 Noise.- 2.9 New Transit-Time Device Concepts.- References.- 3. Schottky Contacts on Silicon.- 3.1 Schottky-Barrier Models.- 3.1.1 The Schottky Mott Model.- 3.1.2 The Space Charge Region.- 3.1.3 Bardeen's Model.- 3.1.4 Linear Models.- 3.1.5 Barrier Height Correlations.- 3.1.6 Advanced Models: Charge Transfer Across the Interface.- 3.2 Epitaxial Diodes on Si.- 3.2.1 Single-Crystalline Schottky Contacts.- 3.2.2 Other Orientational Dependences.- 3.2.3 CaSi2 and Ag.- 3.2.4 Polycrystalline Epitaxial Contacts on Si.- 3.2.5 Unconventional Metals with Small Lattice Mismatch to Si.- 3.2.6 Summary.- 3.3 Electrical Transport Properties.- 3.3.1 Emission Over the Barrier.- 3.3.2 Tunneling Through the Barrier.- 3.3.3 Generation Recombination in the Space Charge Region.- 3.3.4 Minority Carrier Injection.- 3.3.5 Inhomogeneities in Schottky Contacts.- 3.3.6 Noise Properties.- 3.3.7 Microwave Properties.- 3.4 Schottky-Barrier Measurements.- 3.4.1 Current-Voltage Curves.- 3.4.2 Capacitance Measurements.- 3.4.3 Internal Photoemission (Photoresponse).- 3.4.4 External Photoemission.- 3.4.5 Results for Polycrystalline Contacts.- 3.5 Conclusions.- References.- 4. SiGe Heterojunction Bipolar Transistors.- 4.1 Operation Principle of Homojunction and Heterojunction Bipolar Transistors.- 4.1.1 The Bipolar Junction Transistor and Its Physical Limits.- 4.1.2 The Heterojunction Bipolar Transistor.- 4.1.3 The Si/Ge Material System.- 4.2 Design of SiGe HBT Layers.- 4.2.1 Emitter Design.- 4.2.2 Base Design.- 4.2.3 Collector Design.- 4.3 Fabrication Technologies and Device Performance.- 4.4 Applications of SiGe HBTs.- 4.5 Conclusion.- References.- 5. Silicon Millimeter-Wave Integrated Circuits.- 5.1 Silicon as the Substrate Material.- 5.1.1 Silicon-Substrate Waveguide Parameters.- 5.1.2 Surface Waves.- 5.2 Millimeter-Wave Sources for SIMMWICs.- 5.2.1 IMPATT Oscillator.- 5.2.2 Varactor-Tuned Oscillator.- 5.2.3 HBT Oscillator.- 5.3 SIMMWIC Transmitter.- 5.3.1 Thermal Limitation of Monolithic IMPATT Diodes.- 5.3.2 Coplanar Slot-Line Transmitter.- 5.4 SIMMWIC Receiver.- 5.4.1 Microstrip Receiver.- 5.4.2 Coplanar Slot-Line Receiver.- 5.4.3 Resonant Tunneling Rectenna.- 5.5 SIMMWIC Switch.- References.- 6. Self-Mixing Oscillators.- 6.1 Principle of Operation.- 6.2 Linear Disturbance Theory.- 6.2.1 Model for the Self-mixing Oscillator.- 6.2.2 Conversion-Gain Factors.- 6.2.3 Simplified Device Model.- 6.3 Matrix Formulation of Conversion Gain.- 6.3.1 Conversion Matrix.- 6.3.2 Conversion Gain.- 6.4 Noise in Self-Mixing Oscillators.- 6.4.1 RF Noise.- 6.4.2 Low Frequency Noise.- 6.5 Numerical Simulations.- 6.6 Measuring Techniques and Experimental Results.- 6.6.1 Measuring Set-up.- 6.6.2 Experimental Results of a Si-IMPATT Device in the V-band.- References.- 7. Silicon Millimeter-Wave Integrated Circuit Technology.- 7.1 Technological Requirements for a Millimeter-Wave Substrate.- 7.1.1 Historical Background of SIMMWIC Technology.- 7.1.2 Characterization of High-Resistive Silicon Substrates.- 7.1.3 Behaviour of High-Resistive Silicon Substrates During Fabrication Processes.- 7.2 Basic Technologies.- 7.2.1 Buried Layers.- 7.2.2 Epitaxial Growth.- 7.2.3 Lithography.- 7.2.4 Pattern Transfer.- 7.2.5 Metallization and Air Bridge Technology.- 7.3 Fabrication Process and Monolithic Integration of Two-Terminal Devices.- 7.3.1 Fabrication Process of Coplanar Schottky-Barrier Diodes.- 7.3.2 Fabrication Process of Monolithically Integrated Transit-Time Diodes.- 7.3.3 Fabrication Process of Lateral PIN Diodes.- 7.4 Fabrication Process of Three-Terminal Devices.- 7.4.1 Bipolar Transistors.- 7.4.2 Hetero Bipolar Transistors for SIMMWICs.- 7.5 Summary and Prospects.- References.- 8. Future Devices.- 8.1 Physics and Applications of Si/SiGe, Double-Barrier Structures.- 8.1.1 Band Structure of Si/SiGe.- 8.1.2 Tunneling Current Calculation.- 8.1.3 The Quantum-Mechanical Concept of Electromagnetic Oscillations from Resonant-Tunneling Double Barriers.- 8.1.4 Calculation of fmax for n-type Si/SiGe Tunneling Diodes.- 8.1.5 Equivalent-Circuit Analysis of Oscillation Frequency and Output Power from an n-type Si/SiGe Double-Barrier Diode.- 8.1.6 Millimeter-Wave Detection by Si/SiGe Double Barriers.- 8.2 The Si/SiGe Quantum Barrier Varactor Diode.- 8.3 Field-Effect Devices: Si/SiGe MODFET and MOST, ?-Doped Si FET.- 8.3.1 dc and HF Modeling.- 8.3.2 Modeling Results and Comparison with Si n- and p-MOSTs.- 8.3.3 Experimental Results.- 8.3.4 Processing Steps: Growth and Post Processing.- Appendix 8.A The Effective-Mass Approximation.- Appendix 8.B Maximum Oscillation Frequency and Power Generation.- References.- 9. Future Applications.- 9.1 Sensor Applications.- 9.1.1 Measurement Principles.- 9.1.2 Radiometric Sensors.- 9.1.3 cw Radar Sensors.- 9.1.4 Frequency Modulated Radar Sensors.- 9.1.5 Pulse-Modulated Radars.- 9.2 Communication Applications.- 9.2.1 General Considerations.- 9.2.2 Identification Card Systems.- 9.2.3 Short-Range Data Transmission.- 9.2.4 Information Systems.- 9.2.5 Millimeter-Wave Data Bus.- 9.3 System Requirements.- 9.3.1 General System Aspects.- 9.3.2 Frequency Stability.- 9.3.3 Environmental Conditions.- 9.3.4 Packaging.- References.

Tunnel diodes

Abstract: This paper presents a review of the properties, principle of operation, and implications of the tunnel diode. Following a brief description of the unusual characteristics of this device, a discussion is given of the mechanism which leads to the negative resistance. Experiments showing the transition from the tunnel diode characteristic to that of a high-voltage avalanche diode are exhibited. The electrical characteristics of tunnel diodes are outlined making use of the small-signal equivalent circuit which represents the behavior in the negative resistance region. Diodes designed for high-frequency operation are described and examples are given of circuits which demonstrate their behavior as switches, radio receivers, and microwave oscillators. In connection with a discussion of the temperature dependence of these devices, experiments are described which demonstrate the importance of phonons in determining their characteristics at the temperature of liquid helium

Large-signal noise, frequency conversion, and parametric instabilities in IMPATT diode networks

Abstract: A theoretical treatment is presented of some of the nonlinear properties of the IMPATT or Read avalanche diode, a negative-resistance semiconductor device that is now coming into wide-spread use for microwave oscillators and power amplifiers. Based upon the somewhat idealized Read model, this theory presents a qualitatively meaningful explanation of certain "parametric" effects that are often troublesome to the designers of amplifier and oscillator networks. First, an analytic treatment is given for frequency-conversion effects that appear when the device is strongly driven by one continuous signal, and simultaneously perturbed by a weak signal at another frequency or by noise. From this theory, stability criteria are derived for spurious oscillations of the "parametric" type which frequently appear in these devices under large-signal conditions. The noise-generation mechanism is reviewed, and it is shown that the noise is enhanced by strong signals and the spectral distribution is modified by frequency conversion. Some measurements of noise and frequency-conversion gain are presented which indicate substantial qualitative agreement with the theory.