Topic
IMPATT diode
About: IMPATT diode is a research topic. Over the lifetime, 1295 publications have been published within this topic receiving 12298 citations.
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TL;DR: In this paper, the power output and efficiency of a Read-type IMPATT diode was analyzed using a closed-form solution of the nonlinear equations describing a Read type diode.
Abstract: This paper presents results on RF power output and efficiency of IMPATT oscillators obtained from a large-signal model of these devices. The results are obtained from a closed-form solution of the nonlinear equations describing a Read-type IMPATT diode. The closed-form solution is obtained by assuming a short transit time through the drift region compared to the RF period. The solution is used to obtain the large-signal diode impedance. The analysis shows that the power output of an IMPATT diode depends strongly on the series load resistance presented to the active part of the diode and that the change in diode reactance with increasing bias current also depends on the series resistance. Plots of power output as a function of frequency, bias current, and load resistance are presented. Frequency tuning of the oscillator through current variation is also discussed. Experimental results are presented and compared with the theoretical ones wherever possible. The results lead to an improved understanding of such oscillators and are extremely useful in optimizing their performance and determining their limitations.
52 citations
TL;DR: In this article, the dc field and current density profiles of a Si n+-p-v-n-p+double avalanche region (DAR) Impatt have been carried out.
Abstract: A computer study on the dc field and current-density profiles of a Si n+-p-v-n-p+double avalanche region (DAR) Impatt has been carried out. With increasing current density the uniform electric field in the central drift region remains almost unaffected due to cancellation of mobile space charge, in case of symmetrically doped structure. Also the avalanche and drift-zone widths and the RF conversion efficiency remain almost unaltered. For asymmetric doping there is a small space-charge effect.
52 citations
TL;DR: In this paper, a double-Read IMPATT diodes for D-band frequencies were designed and tested, and the module encapsulation technique was applied for reproducible RF impedance matching, where the active device was reduced by a titanium-Schottky contact instead of an alloyed n/sup +/- contact.
Abstract: CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching, the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n/sup +/-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised.
50 citations
TL;DR: In this article, the microwave oscillaton characteristics of GaAs IMPATT diodes under external optical illumination were studied and it was found that depending on the diode bias condition, the frequency of oscillation and the intensity of illumination, the IMPATT microwave output power can be either enhanced or reduced.
Abstract: A study was made of the microwave oscillaton characteristics of GaAs IMPATT diodes under external optical illumination. It was found that depending on the diode’s bias condition, the frequency of oscillation and the intensity of illumination, the IMPATT microwave output power can be either enhanced or reduced.
50 citations
TL;DR: The unique IMPATT properties which affect the oscillator spectral purity and coherency are reviewed and some key considerations for the device design and system applications of the pulsed oscillators are discussed.
Abstract: High-power millimeter-wave pulsed MPATT sources have found a variety of applications as solid-state transmitters in RADAR applications. These applications have been greatly enhanced by the rapidly advancing millimeter-wave technology of which the high-power pulsed IMPATT source is a key element. In this paper the unique IMPATT properties which affect the oscillator spectral purity and coherency are reviewed. Some key considerations for the device design and system applications of the pulsed oscillators are discussed along with the state of the art, recent progress, and future trend.
49 citations