Topic
Impurity
About: Impurity is a research topic. Over the lifetime, 21262 publications have been published within this topic receiving 268152 citations.
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TL;DR: In this paper, a modulation-doping technique was used to spatially separate conduction electrons and their parent impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.
Abstract: GaAs‐AlxGa1−xAs superlattice structures in which electron mobilities exceed those of otherwise equivalent epitaxial GaAs as well as the Brooks‐Herring predictions near room temperature and at very low temperatures are reported. This new behavior is achieved via a modulation‐doping technique that spatially separates conduction electrons and their parent donor impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.
1,341 citations
TL;DR: In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.
Abstract: The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.
1,250 citations
TL;DR: The current state of polaron theory as applicable to transition metal oxides is reviewed in this article, including problems such as impurity conduction where disorder plays a role, and an estimate is given of the conditions under which polaron formation leads to an enhancement of the mass but no hopping energy.
Abstract: The current state of polaron theory as applicable to transition metal oxides is reviewed, including problems such as impurity conduction where disorder plays a role. An estimate is given of the conditions under which polaron formation leads to an enhancement of the mass but no hopping energy. The binding energy of a polaron to a donor or acceptor in narrow-band semiconductors is discussed. The experimental evidence about the conductivity of TiO 2 and NiO is reviewed. Impurity conduction in NiO and conduction in glasses containing transition metal ions is discussed and it is emphasized that the activation energy for hopping nearly all vanishes at low temperatures. Pollak's theory of a.c. impurity conductivity is reviewed and applied to the problem of dielectric loss in these materials.
1,063 citations
TL;DR: In this paper, a review on the diffusion, solubility and electrical activity of 3D transition metals in silicon is given, which can be divided into two groups according to the respective enthalpy of formation of the solid solution.
Abstract: A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations.
987 citations
TL;DR: In this article, the authors provide a unified framework for describing quasi-localized states in the vicinity of impurity sites in conventional and unconventional superconductors and show that these fluctuations affect the density of states and are, strictly speaking, gapless in the presence of an arbitrarily small concentration of magnetic impurities.
Abstract: We review recent developments in our understanding of how impurities influence the electronic states in the bulk of superconductors. Our focus is on the quasi-localized states in the vicinity of impurity sites in conventional and unconventional superconductors and our goal is to provide a unified framework for their description. The non-magnetic impurity resonances in unconventional superconductors are directly related to the Yu-Shiba-Rusinov states around magnetic impurities in conventional s-wave systems. We review the physics behind these states, including quantum phase transition between screened and unscreened impurity, and emphasize recent work on d-wave superconductors. The bound states are most spectacularly seen in scanning tunneling spectroscopy measurements on high-$T_c$ cuprates, which we describe in detail. We also discuss very recent progress on the states coupled to impurity sites which have their own dynamics, and impurity resonances in the presence of an order competing with superconductivity. Last part of the review is devoted to influence of local deviations of the impurity concentration from its average value on the density of states in s-wave superconductors. We review how these fluctuations affect the density of states and show that s-wave superconductors are, strictly speaking, gapless in the presence of an arbitrarily small concentration of magnetic impurities.
968 citations