Indium antimonide

About: Indium antimonide is a research topic. Over the lifetime, 1425 publications have been published within this topic receiving 21541 citations.

Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

Abstract: Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and one superconducting (niobium titanium nitride) electrode. Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields on the order of 100 millitesla, we observe bound, midgap states at zero bias voltage. These bound states remain fixed to zero bias, even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.

The Interpretation of the Properties of Indium Antimonide

Abstract: The data given on the optical properties of InSb are analysed and precise values for the position and temperature dependence of the absorption edge are given. The variation of the position of the absorption edge with impurity concentration is explained by the very low effective mass of the conduction electrons, which is estimated by three methods to be about 0.03 of the free electron mass.

Fourier Transform Spectroscopic Imaging Using an Infrared Focal-Plane Array detector

Abstract: A powerful new mid-infrared spectroscopic chemical imaging technique combining step-scan Fourier transform Michelson interferometry with indium antimonide focal-plane array (FPA) image detection is described The coupling of an infrared focal-plane array detector to an interferometer provides an instrumental multiplex/multichannel advantage Specifically, the multiple detector elements enable spectra at all pixels to be collected simultaneously, while the interferometer portion of the system allows all the spectral frequencies to be measured concurrently With this method of mid-infrared spectroscopic imaging, the fidelity of the generated spectral images is limited only by the number of pixels on the FPA detector, and only several seconds of starting time is required for spectral image acquisition This novel, high-definition technique represents the future of infrared chemical imaging analysis, a new discipline within the chemical and material sciences, which combines the capability of spectroscopy for molecular analysis with the power of visualization In particular, chemical imaging is broadly applicable for noninvasive, molecular characterization of heterogeneous materials, since all solid-state materials exhibit chemical nonuniformity that exists either by design or by development during the course of material preparation or fabrication Imaging, employing Raman and infrared spectroscopy, allows the precise characterization of the chemical composition, domain structure, and chemical architecture of a variety of substances This information is often crucial to a wide range of activities, extending from the fabrication of new materials to a basic understanding of biological samples In this study, step-scan imaging principles, instrument design details, and infrared chemical imaging results are presented Since the prospect of performing high-resolution and high-definition mid-infrared chemical imaging very rapidly has been achieved with the step-scan approach, the implications for the chemical analysis of materials are many and varied

Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor.

Abstract: The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices.

Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.

Abstract: A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas, respectively. For inhomogeneities of sufficiently large diameter relative to that of the surrounding disk, the resistance is field-independent up to an onset field above which it increases rapidly. These results can be understood in terms of the field-dependent deflection of current around the inhomogeneity.