Indium gallium zinc oxide

About: Indium gallium zinc oxide is a research topic. Over the lifetime, 672 publications have been published within this topic receiving 18606 citations.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

Abstract: The full color 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix back plane It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor The n-channel a-IGZO TFTs exhibited the field-effect mobility of 82 cm2/Vs, threshold voltage of 11 V, on/off ratio of > 108, and subthreshold gate swing of 058 V/decade The AMOLED display with a-IGZO TFT array would be promising for large size applications such as note PC and HDTV because a-IGZO semiconductor can be deposited on large glass substrate (> Gen 7) using conventional sputtering system

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

Abstract: We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (Vth) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress.

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

Abstract: The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.