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Showing papers on "Indium tin oxide published in 1973"



Journal ArticleDOI
TL;DR: In this article, it was shown that the tin environment is substantially different from the indium environment, namely In 2 O 3, the environment of the tin is changed towards lower binding energies than the SnO 2 starting material.

67 citations


Patent
J Kane1
15 Mar 1973
TL;DR: In this article, the indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione is volatilized in a heated carrier gas stream and brought into contact with a preheated substrate to be coated in an atmosphere containing oxygen or water.
Abstract: The indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione is volatilized in a heated carrier gas stream and brought into contact with a preheated substrate to be coated in an atmosphere containing oxygen or water. The process is particularly applicable to the deposition of indium oxide on glass vidicon faceplates.

1 citations


01 Jun 1973
TL;DR: In this paper, the concentration of dopant is controlled by appropriate mixing of the oxides of indium and zinc, and the relative intensity of the EPR spectrum is affected by indium doping.
Abstract: : Samples of zinc oxide doped with indium have been prepared using the vapor transport method. Concentration of dopant is controlled by appropriate mixing of the oxides of indium and zinc. When ZnO is mechanically damaged, three lines in the EPR spectrum with g-values at 2.0052, 2.0136, 2.0184 are induced. These are attributed to the interaction of adsorbed species and induced paramagnetic centers in the crystal. The relative intensity of the lines is affected by indium doping. (Modified author abstract)