Showing papers on "Indium tin oxide published in 1984"

Optical properties of transparent and heat‐reflecting indium tin oxide films: The role of ionized impurity scattering

Abstract: The complex dynamical resistivity of high‐quality transparent and heat‐reflecting indium tin oxide films, prepared by reactive e‐beam deposition, was evaluated from spectrophotometric measurements in the 0.25–50‐μm wavelength range. These data are explained in detail from a theory encompassing scattering of free electrons by ionized impurities.

Thermally insulating glazing

Abstract: A method of producing glass sheets having good transmission behavior in the visible spectrum range and having good reflection behavior as regards heat radiation. A transparent substrate S is coated by cathodic atomization with, successively, a first oxide layer 1 comprising indium oxide, tin oxide or mixtures thereof, a layer 2 consisting of silver in a thickness of 5 to 50 n, a metallic layer 3 selected from aluminium, titanium, tantalum, chromium, manganese and zirconium in a thickness ranging from 1 to 5 nm and applied directly to the silver layer 2 for the purpose of maintaining the condition thereof, and a final protective oxide layer 4 of indium oxide, tin oxide or mixtures thereof.

Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition

Abstract: An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and photovoltaic devices. The method includes the novel steps of combining the use of (1) an electron beam to vaporize a source of solid material, and (2) electromagnetic energy to provide an ionizable plasma from reactant gases. By passing the vaporized solid material through the plasma, it is activated prior to the deposition thereof onto the substrate. In this manner, the solid material and the reactant gases are excited to facilitate their interaction prior to the deposition of the newly formed compound onto the substrate.

Indium tin oxide sol compositions

Abstract: An indium tin oxide sol composition comprises 0.5 to 30% by weight of indium oxide, tin oxide in an amount of from 0.5 to 30% by weight, based on the amounts of tin, and indium, and a dispersing agent. The composition is obtained by contacting a solution of an indium salt of an inorganic acid containing a tin salt of an inorganic acid with an ion-exchange resin. The composition has high purity and forms excellent transparent conductive films.

Electrical properties of indium-tin-oxide single crystals

Abstract: Indium-tin-oxide single crystals with 0–9 atomic% of Sn/In are produced by flux method, and their electrical properties are measured. At about 2 atomic% of Sn/In, the resistivity is 2×10-4 Ω-cm and the electron concentration is 3×1020/cm3 at room temperature. Further increase of Sn/In ratio does not change the electrical properties. The electron concentration is about 1/2–1/10 of the numbers of Sn atoms in the crystals. The value of electron mobility is about 100 cm2/V.s and independent with the atomic ratio of Sn/In. This value is about 5 times larger than the calculated one assuming the ionized impurity scattering in degenerate semiconductor.

Method for low temperature, low pressure metallic diffusion bonding of piezoelectric components

Abstract: A method for intermetallic diffusion bonding of piezoelectric components, wherein ceramic pieces with fired-on silver electrodes are stacked with a thin shim of solid indium alloy therebetween. The indium alloy preferably comprises 25% indium, 37.5% lead and 37.5% tin. The stack is placed under 150 psi compression and heated at a temperature of about 350° for 30-48 hours in an inert gas. Almost immediately upon being heated, a liquid-solid diffusion takes place in which a small amount of the silver diffuses from the electrodes into the now liquid indium alloy. The alloy in the interface becomes saturated with silver producing a new quaternary alloy which has a higher melting point than the previous indium alloy shim. Thus, there is a gradual solidification of the alloy as the concentration of silver increases. After solidification of the new alloy during the remainder of the heating time, there is a gradual diffusion of the indium into the silver and vice versa. The bi-directional solid-solid diffusion of the indium and silver gives the bond a strength higher than known in the prior art.

Electrode substrate for liquid crystal display panel

Abstract: PURPOSE: To improve the transparency, electrical conductivity and durability of transparent electrodes by successively providing an anchoring coat layer, gas permeation resistant resin layer and crosslinkable resin cured layer on a base material layer and forming a transparent electrode consisting of a crystalline indium oxide thereon. CONSTITUTION: The anchoring coat 2 formed by using an anchoring agent dissolved or dispersed in an aq. medium, the gas permeation resistant resin layer 3 and the crosslinkable resin cured layer 4 are successively provided on the base material layer 1 consisting of a non-optical rotatory transparent film or sheet having ≤30nm retardation value. This composite material A is used and the transparent electrode B consisting mainly of the crystalline indium oxide is formed thereon. While the indium oxide is an intrinsically transparent electric insulator, this indium oxide is converted to a semiconductor by incorporating a slight amt. of an impurity, for example, tin or fluorine or slightly lacking oxygen therein. The transparent electrode B having the excellent transparency, electrical conductivity and durability is obtd. in this way. COPYRIGHT: (C)1991,JPO&Japio

Thin film solar battery

Abstract: PURPOSE:To form a stable series connection type thin film solar battery whereto a reverse parallel diode is added without increasing a photo power generating reactive area by a method wherein the reverse parallel diode for protecting the thin film solar battery element in series connection is formed on a flexible metallic electrode and is then connected between each element and the upper electrode of adjacent elements. CONSTITUTION:Generally, ITO (indium tin oxide) film or SnO2 film is used for a plurality of clear electrodes 4 formed in isolation on a common clear insulation substrate 3. An a-Si pattern 5 with a P-layer, an I-layer, and an N-layer laminated from the substrate side is isolation- formed thereon. And, the metallic electrode 6 is formed thereon. The left side edge of the metallic electrode 6 in the figure is so formed as to overlap on the edge of the a-Si layer 5, and the right side is extended until it is electrically connected to the clear electrode 4. Thus, the solar battery elements are put in series connection. The exposed part of the metallic electrode 8 is adhered to the metallic electrode 61 of one solar battery element 11 with an adhesive such as conductive paste, and the metallic electrode 10 to the metallic electrode 62 of the adjacent solar battery element 12, and the protection diode 2 is connected to the solar battery element 1 in reverse parallel. A plurality of such protection diodes 2 are prepared on the common flexible film 7, which are then adhered on the solar battery elements prepared in a plurality on the common insulation substrate 3.

Semitransparent silicide electrodes utilizing interaction between hydrogenated amorphous silicon and metals

Abstract: Thin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon (a‐Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal, annealing, and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be less than 100 A. Accordingly, it can be used as the semitransparent electrode in a‐Si:H photodiodes. This layer is more chemically stable than such conventional transparent semiconductive oxides as indium tin oxide (ITO). Photodiodes using this semitransparent electrode have as good optical and electrical characteristics as conventional a‐Si:H photodiodes using ITO.

Thin film semiconductor device

Abstract: PURPOSE: To relieve defects by constituting dual line wiring at the intersecting part of a gate bus and a data bus of a TFT gate array, and eliminating a part of the dual line wiring, when the short between the wirings generates. CONSTITUTION: On a light transparent insulating substrate 10, Cr metal is selectively stuck and formed as a gate electrode and gate buses 1, 1'. By plasma discharge, silicon nitride 11 is deposited as a gate insulating film and an interlayer insulating film on the whole surface. By plasma discharge, an amorphous silicon layer is deposited as an amorphous semiconductor layer 2, and further N-type amorphous silicon 3 is deposited. After the amorphous silicon (the N-type layer also is contained) 2, 3 are etched in a desired pattern, a source electrode 4, a drain electrode 5 and data buses 5' are formed by using Cr, Al, etc., and the N-type amorphous silicon is etched by using the pattern as a mask. A transparent electrode is selectively stuck by using indium tin oxide, and a protecting film 7 is stuck on the almost whole surface by using silicon nitide and the like. Hence a semiconductor device can be relieved from the generation of defects caused by short circuiting by cutting a part of the dual line. COPYRIGHT: (C)1991,JPO&Japio

An improved method of manufacturing flat panel backplanes, display transistors and displays made thereby

Abstract: An improved method of manufacturing active matrix display backplanes with thin film transistors thereon and a drive scheme therefor A refractory metal covers the indium tin oxide (ITO) layer, patterned to form a gate electrode for the transistors and to protect the pixel pad ITO during formation of the transistors To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges

Boron contamination in the intrinsic layers of amorphous silicon solar cells

Abstract: The undoped hydrogenated amorphous silicon (a‐Si:H) is well‐known to be n− type. When this material is used to fabricate nip solar cells in a single chamber system, it tends to be contaminated by the residue dopants remaining from the deposition of the first boron‐doped p layer unless adequate precautions are taken. The photoresponses of the indium tin oxide (ITO)/nip a‐Si:H:F/stainless steel solar cells were measured by using band‐passed blue (350 580 nm) light. The blue light penetrates only about 1400 A deep into the device whereas the red light is absorbed rather uniformly inside a typical 4000‐A‐thick cell. These two responses as a function of applied biases can thus be used to find out the location of the carrier collection region which in turn tells us the degree of contamination in the i layer. Several examples will be discussed which illustrate the close relationships between the deposition parameters and the cell performances.

Indium doped gallium arsenide crystals and method of preparation

Abstract: A method of fabrication of low dislocation single crystal indium-doped gallium arsenide, and improved crystal structure. The method is an improved liquid encapsulant Czochralski process with an indium doping level of 5×1019 to 3×1020 indium atoms per cubic centimeter incorporated into the large diameter, long single crystal. The initial melt of elemental indium, gallium, and arsenic contain about 1 atom percent of indium, and inclusion of the indium permits high yield growth of crystals with desired near stoichiometric or slightly arsenic rich composition which exhibit the desired electrical characteristics.

High performance hydrogenated amorphous Si solar cells with graded boron-doped intrinsic layers prepared from disilane at high deposition rates

Abstract: High speed preparation of A1/nip/SnO2/indium tin oxide/Glass type amorphous Si solar cells from disilane is presented with emphasis on the boron doping profile during the intrinsic layer deposition It was found that the cell characteristics strongly depend on the doping level and the profile of B2H6, and 805% and 685% conversion efficiencies were obtained with a linear graded doping profile at the deposition rates of 15 and 30 A/s, respectively

Photoelectric transducer device

Abstract: PURPOSE:To provide a highly efficient photoelectric transducer device, by forming a-Si including oxygen atoms in the first doping layer which is to be formed on ITO (Indium Tin Oxide) or SnO2, thereafter forming the same conductive type a-Si, which does not include oxygen. CONSTITUTION:The concentration of B2H6, which is used for obtaining a P type by 20% SiH4 that is dilluted by an H2 base, is made to be 0.05-1% with respect SiH4. O2 is made to be 2-10vol% with respect to SiH4. This gas is made to act on a substrate at a temperature of 200 deg.C, and a P type a-Si layer with a thickness of 50Angstrom is formed. At this time, suppression effect of SiO or SiO2 is made conspicuous by mixing oxygen, and the increase in series resistance can be prevented when a solar battery is manufactured. The thickness of ordinary P type a-Si 10, in which oxygen atoms are not introduced, is 50Angstrom . The sum of the P type layer is 100Angstrom . In this way, the light absorbing loss is made to be about a half in comparison with the case only the ordinary P type a-Si is used. The P-I interface is not different from the ordinary element. The resistance can be made smaller than a single oxygen doped P type a-Si. The increase in the series resistance can be avoided.

Process for producing tin oxide fibers

Abstract: A process for producing tin oxide fibers, which comprises forming a melt comprising a solute composed essentially of tin oxide and a solvent selected from the group consisting of copper, a copper alloy, tin or a tin alloy, evaporating the solute from the melt, and introducing the evaporated solute to a low temperature zone, whereby tin oxide fibers are permitted to precipitate and grow in the low temperature zone.

Fabrication Of Electrode Structures On Very Large Electroluminescent Displays

Abstract: Fabrication issues for EL panels up to one meter square are discussed. Particular attention is given the problem of fabricating electrode structures of indium tin oxide and aluminum on the large panels. Experimental results of processing on panels up to 26 x 32 cm active area with 512 x 640 pixels, using transparent electrodes with sheet resistance of less than 10 ohms per square and metal electrodes with sheet resistance less than 1 ohm per square are discussed. Brightness variations due to electrode resistance are given, and brightness as a function of drive voltage is reported for the 512 x 640 geometry.

Stability of some indium-tin oxide coatings.

Abstract: Un processus de depot de couches minces d'oxyde d'indium et d'etain en trois etapes a ete recemment rapporte. (Assadourian-Herczeg, Appl. Opt. 23, 1452 (1984)). On examine ici certains phenomenes associes a la stabilite de la resistivite de ces couches minces

Manufacture of thin-film element

Abstract: PURPOSE:To prevent the generation of unsatisfactory cutting on a glass substrate and the breakage of a screen as well as to prevent the deterioration in dampproof property of an element by a method wherein a printing process is performed continuously on a hard passivation resin without separating it for each element, and the glass and the resin are broken simultaneously by giving a flaw on the surface of the glass located on the reverse side. CONSTITUTION:In the case of the solar battery and the photoelectromotive force element wherein morphous silicon is used, a transparent electrode 2 such as indium tin oxide, SnO2 and the like is formed in the thickness of approximately 500-1,500Angstrom on a glass substrate 1 of 0.5-1mm. in thickness by performing an electron beam vapor-deposition or a sputtering, and a semiconductor thin film 3 of approximately 3,500-5,000Angstrom consisting of a P-layer, an i-layer and an N-layer is deposited on said electrode 2. Then, an electrode 4 is formed by vacuum-depositing metals such as aluminum, nickel, chromium, chitanium and the like. Lastly, the above is dried up and hardened after a screen printing has been performed. Cutting is performed by producing a flaw on the glass surfaces 9, 9' opposite side of the surface coated with resin 5 by a cutting machine, and splitting the glass layer 1 and the resin 5 simultaneously.

Transparent electrode for photoelectric transducer element

Abstract: PURPOSE:To obtain excellent adhesive property with an organic photoelectric transducer element and to eliminate adverse effect to the durability of the organic photoelectric transducer element, by using a metal or metal oxide thin film which is evaporated on a transparent, organic macromolecular base material film as a transparent electrode for the organic photoelectric transducer element. CONSTITUTION:A molecular film made of a polyester resin, a polyolefin resin, a polycarbonate resin, a polyamide resin, a polyimide resin, or the like, which has a thickness of 5mum or more and 500mum or less, is used as a transparent organic macromolecular base material film. Of these, biaxially stretched polyethylene terephthalate film has excellent dimensional stability, transparence, and mechanical characteristics and it is the most suitable film. As a metal or a metal oxide, a metal such as aluminum, zinc, iron, nickel, tantalum, gold, silver, or cobalt is used, and a metal oxide such as a tin oxide or an indium tin oxide is used. As an organic photoelectric transducer element, chlorophyll, melocyanine, phthalocyanine, thionine, rhodamine 6G, or the like is used.