Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
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TL;DR: Another p-type inorganic hole-selective contact material, CuS nanoparticles (CuS NPs), is applied in an inverted planar heterojunction perovskite solar cell to reduce the interfacial carrier injection barrier and facilitate high hole extraction efficiency.
Abstract: Organic–inorganic hybrid perovskite solar cells (PSCs) have drawn worldwide intense research in recent years. Herein, we have first applied another p-type inorganic hole-selective contact material, CuS nanoparticles (CuS NPs), in an inverted planar heterojunction (PHJ) perovskite solar cell. The CuS NP-modification of indium tin oxide (ITO) has successfully tuned the surface work function from 4.9 to 5.1 eV but not affect the surface roughness and transmittance, which can effectively reduce the interfacial carrier injection barrier and facilitate high hole extraction efficiency between the perovskite and ITO layers. After optimization, the maximum power conversion efficiency (PCE) has been over 16% with low J–V hysteresis and excellent stability. Therefore, the low-cost solution-processed and stable CuS NPs would be an alternative interfacial modification material for industrial production in perovskite solar cells.
125 citations
TL;DR: In this paper, the conductivity of indium tin oxide (ITO) films was found to be strongly dependent on the crystallinity of the ITO films, and it was suggested that the amorphous layer with thickness of 80nm was formed at the interface on the polymer substrate and polycrystalline ITO could be obtained above the thickness.
124 citations
TL;DR: In this paper, the authors have fabricated and characterized ferroelectric-gate thin-film transistors (TFTs) using indium-tin-oxide (ITO) as a channel and ferronelectric Bi4−xLaxTi3O12 (BLT) as an insulator.
Abstract: We have fabricated and characterized ferroelectric-gate thin-film transistors (TFTs) using indium-tin-oxide (ITO) as a channel and ferroelectric Bi4−xLaxTi3O12 (BLT) as a gate insulator. We have obtained a typical n-channel transistor property with clear current saturation in drain current and drain voltage (ID–VD) characteristics. The obtained on∕off current ratio is more than 104 and the field-effect mobility is estimated 9.1cm2∕Vs. In particular, we demonstrate a large “on”-current of 2.5 mA in ITO∕BLT structure TFT in spite of the low channel mobility. This is because the ferroelectric film can induce large charge density due to the spontaneous polarization.
124 citations
TL;DR: In this article, the change of surface electronic structure of indium-tin-oxide (ITO) as a function of ultraviolet (UV)oxide treatment time was reported, which led to the increase in the ITO work function via the reduction of operation voltage.
Abstract: We report the change of surface electronic structure of indium–tin–oxide (ITO) as a function of ultraviolet (UV)–ozone treatment time. The voltage of organic light emitting diodes at a current density of 100 mA/cm2 was reduced as the surface treatment time using UV–ozone was lengthened. X-ray photoelectron spectroscopy results showed that the relative concentration of carbon atoms decreased, but oxygen concentration increased relatively with UV–ozone treatment. This led to the increase in the ITO work function via the reduction of operation voltage.
124 citations
Patent•
20 Jun 1996
TL;DR: In this paper, a transparent multilayer device which reflects light in the infrared region of the spectrum while transmitting light on the visible region of spectrum is proposed. The device comprises a multilayered polymer film and a transparent conductor.
Abstract: A transparent multilayer device which reflects light in the infrared region of the spectrum while transmitting light in the visible region of the spectrum. The device comprises a multilayered polymer film and a transparent conductor. The multilayered polymer film preferably comprises layers of a semi-crystalline naphthalene dicarboxylic acid polyester having an average thickness of not more than 0.5 microns and layers of a second polymer having an average thickness of not more than 0.5 microns. The layers of semi-crystalline naphthalene dicarboxylic acid polyester preferably have a positive stress optical coefficient. The transparent conductor comprises at least one layer containing a metal or a metal compound in which the metal compound is preferably selected from the group consisting of metal oxides, metal alloys, and combinations thereof. Silver and indium tin oxide are particularly preferred transparent conductors. The transparent multilayer devices may be applied to the surface of a glass or plastic substrate, such as an exterior window in a building, or to a windshield or window in an automobile, truck, or aircraft.
124 citations