Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Fully solution-processed semitransparent organic solar cells with a silver nanowire cathode and a conducting polymer anode.

Abstract: We report the fabrication of efficient indium-tin-oxide-free organic solar cells based on poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM). All layers of the devices from the lowermost silver nanowire cathode to the uppermost conducting polymer anode are deposited from solution and processed at plastic-compatible temperatures<200 °C. Owing to the absence of an opaque metal electrode, the devices are semitransparent with potential applications in power-generating windows and tandem-cells. The measured power conversion efficiencies (PCEs) of 2.3 and 2.0% under cathode- and anode-side illumination, respectively, match previously reported PCE values for equivalent semitransparent organic solar cells using indium tin oxide.

Resistive switching behaviors of ZnO nanorod layers

Abstract: We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zincinterstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.

Uniform and Ordered Copper Nanomeshes by Microsphere Lithography for Transparent Electrodes

Abstract: We report a comprehensive simulation and experimental study on the optical and electronic properties of uniform and ordered copper nanomeshes (Cu NMs) to determine their performance for transparent conductors. Our study includes simulations to determine the role of propagating modes in transmission and experiments that demonstrate a scalable, facile microsphere-based method to fabricate NMs on rigid quartz and flexible polyethylene terephthalate substrates. The fabrication method allows for precise control over NM morphology with near-perfect uniformity and long-range order over large areas on rigid substrates. Our Cu NMs demonstrate 80% diffuse transmission at 17 Ω/square on quartz, which is comparable to indium tin oxide. We also performed durability experiments that demonstrate these Cu NMs are robust from bending, heating, and abrasion.

Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors

Abstract: This article describes a new atomic layer deposition (ALD) method for preparing indium tin oxide (ITO) thin films using nonhalogenated precursors. The indium oxide (In2O3) was deposited using alternating exposures to cyclopentadienyl indium (InCp) and ozone, and the tin oxide (SnO2) used alternating exposures to tetrakis(dimethylamino) tin (TDMASn) and hydrogen peroxide. By adjusting the relative number of In2O3 and SnO2 ALD cycles, we deposited ITO films with well-controlled SnO2 content. The ITO films were examined using four-point probe and Hall probe measurements, spectrophotometry, ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, and X-ray diffraction. The lowest resistivity (3 × 10-4 Ωcm) and highest optical transparency (92%) were obtained for films containing 5% SnO2. The ITO films were slightly thinner and contained more SnO2 than expected on the basis of rule-of-mixtures predictions. In situ measurements revealed that these discrepancies result from an inh...

Direct Vapor Growth of Perovskite CsPbBr3 Nanoplate Electroluminescence Devices.

Abstract: Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr3 nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr3 nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr3 Schottky barriers with highly efficient carrier injection is ...