Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
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TL;DR: In this paper, indium tin oxide (ITO) thin films were grown heteroepitaxially on (111) and (100) surfaces of yttria-stabilized zirconia (YSZ) at a growth temperature of 900°C using a pulsed-laser deposition technique, and their crystal quality and surface morphology were evaluated by using high-resolution x-ray diffraction and an atomic force microscope.
Abstract: Highly electrically conductive (resistivity: 1×10−4 Ω cm) indium tin oxide (ITO) thin films were grown heteroepitaxially on (111) and (100) surfaces of yttria-stabilized zirconia (YSZ) at a growth temperature of 900 °C using a pulsed-laser deposition technique, and their crystal quality and surface morphology were evaluated by using high-resolution x-ray diffraction and an atomic force microscope. Higher growth temperature, the use of a cleaved surface as a substrate, and an increase in oxygen pressure are essential to fabricate an ITO thin film with an atomically flat surface. The full width at half maximum of out-of-plane x-ray rocking curves of ITO (222) grown on YSZ (111) and of ITO (400) on YSZ (100) were 54 and 720 arcseconds, respectively, which indicates that (111)-oriented ITO films exhibited higher crystal quality than (100)-oriented ITO films. The ITO film was grown on YSZ (111) by the three-dimensional spiral growth mode, with flat terraces and steps corresponding to (222) plane spacing of 0.2...
115 citations
TL;DR: It is shown that in the cathodic part of the studied potential window all oxides dissolve during the electrochemical reduction of the oxide – cathodic dissolution, and in case an oxidation potential is applied to the reduced electrode, metal oxidation is accompanied with additional dissolution – anodic dissolution.
Abstract: Tin-based oxides are attractive catalyst support materials considered for application in fuel cells and electrolysers. If properly doped, these oxides are relatively good conductors, assuring that ohmic drop in real applications is minimal. Corrosion of dopants, however, will lead to severe performance deterioration. The present work aims to investigate the potential dependent dissolution rates of indium tin oxide (ITO), fluorine doped tin oxide (FTO) and antimony doped tin oxide (ATO) in the broad potential window ranging from −0.6 to 3.2 VRHE in 0.1 M H2SO4 electrolyte. It is shown that in the cathodic part of the studied potential window all oxides dissolve during the electrochemical reduction of the oxide – cathodic dissolution. In case an oxidation potential is applied to the reduced electrode, metal oxidation is accompanied with additional dissolution – anodic dissolution. Additional dissolution is observed during the oxygen evolution reaction. FTO withstands anodic conditions best, while little and strong dissolution is observed for ATO and ITO, respectively. In discussion of possible corrosion mechanisms, obtained dissolution onset potentials are correlated with existing thermodynamic data.
115 citations
TL;DR: In this paper, the authors reported the origin of the strong UV-irradiation dependence, generally known as a "light-soaking" process, in inverted polymer solar cells (I-PSCs) using the interface of an sol-gel processed titanium suboxide (TiOx) and indium tin oxide (ITO) cathode.
Abstract: We report the origin of the strong UV-irradiation dependence, generally known as a “light-soaking” process, in inverted polymer solar cells (I-PSCs) using the interface of an sol-gel processed titanium sub-oxide (TiOx) and indium tin oxide (ITO) cathode. When I-PSCs incorporating TiOx as an electron-selecting layer were fabricated, the as-prepared devices exhibited an anomalous J-V curve with a kink shape, resulting in an extremely low efficiency. However, the kink shape disappeared after white light irradiation for considerable duration, after which the device parameters recovered the normal values expected for this class of devices. By using electrochemical impedance spectroscopy and by measuring the contact potential difference and transient photoconductivity of the TiOx layer, we found that the light-soaking process in I-PSCs originates from the photoinduced “rearrangement of the Fermi levels” at the sol-gel processed TiOx and ITO cathode interface together with trap sites existing in the TiOx layer. Based on our data, we optimized I-PSC devices with a high fill factor (FF) of ∼70%.
115 citations
TL;DR: Aluminium doped zinc oxide (ZnO:Al) films were deposited on amorphous substrates heated up to 200°C with a radio frequency (RF) power of 100 W by rf magnetron sputtering from a ZnO target mixed with Al2O3 of 2 wt.%. Argon gas pressure during deposition was in the range 0.08-2.7 Pa as mentioned in this paper.
115 citations
TL;DR: In this paper, transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature were presented.
Abstract: The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlOx served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1V and an on/off ratio of ∼106 operated as a n-type enhancement mode with saturation mobility of 0.53cm2∕Vs. The devices showed optical transmittance about 80% in the visible range.
115 citations