Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
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TL;DR: The stable hexane dispersion of ITO NCs was also readily spin-cast on polyimide (T(g) ~360 °C), and the resultant ITO assembly exhibited a comparable conductivity and transparency to the assembly on a glass substrate.
Abstract: Monodisperse 11 nm indium tin oxide (ITO) nanocrystals (NCs) were synthesized by thermal decomposition of indium acetylacetonate, In(acac)(3), and tin bis(acetylacetonate)dichloride, Sn(acac)(2)Cl(2), at 270 °C in 1-octadecene with oleylamine and oleic acid as surfactants. Dispersed in hexane, these ITO NCs were spin-cast on centimeter-wide glass substrates, forming uniform ITO NC assemblies with root-mean-square roughness of 2.9 nm. The assembly thickness was controlled by ITO NC concentrations in hexane and rotation speeds of the spin coater. Via controlled thermal annealing at 300 °C for 6 h under Ar and 5% H(2), the ITO NC assemblies became conductive and transparent with the 146 nm-thick assembly showing 5.2 × 10(-3) Ω·cm (R(s) = 356 Ω/sq) resistivity and 93% transparency in the visible spectral range--the best values ever reported for ITO NC assemblies prepared from solution phase processes. The stable hexane dispersion of ITO NCs was also readily spin-cast on polyimide (T(g) ~360 °C), and the resultant ITO assembly exhibited a comparable conductivity and transparency to the assembly on a glass substrate. The reported synthesis and assembly provide a promising solution to the fabrication of transparent and conducting ITO NCs on flexible substrates for optoelectronic applications.
114 citations
TL;DR: In this paper, a series of soluble arylamine-based hole-transporting polymers with glass transition temperatures in the range of 130−150 °C have been synthesized, which allows facile substitution of the aryl groups on the amine with electron-withdrawing and electron-donating moieties, which permits tuning of the redox potential of the polymer.
Abstract: A series of soluble arylamine-based hole-transporting polymers with glass transition temperatures in the range of 130−150 °C have been synthesized. The synthetic methodology allows facile substitution of the aryl groups on the amine with electron-withdrawing and electron-donating moieties, which permits tuning of the redox potential of the polymer. These polymers have been used as hole-transport layers (HTLs) in two-layer light-emitting diodes ITO/HTL/Alq/Mg [ITO = indium tin oxide, Alq = tris(8-quinolinato)aluminum]. The maximum external quantum efficiency of the device increases if the redox potential of the HTL is increased to facilitate reduction of the positive charge carriers at the HTL/Alq interface. A fluorinated hole-transport polymer with a relatively large redox potential (390 mV vs ferrocenium/ferrocene) yielded the device with the highest external quantum efficiency of 1.25% photons/e-. The device stability, however, follows the opposite trend. The device with the most electron-rich HTL exhibited the best performance after prolonged usage.
114 citations
TL;DR: In this article, a novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested, and the response of the film with MgO catalytic layer on sensitivity and selectivity was observed.
114 citations
TL;DR: In this article, Cadmium sulfide thin films have been deposited by electrodeposition using the potentiostatic method on indium tin oxide (ITO)-coated glass substrates from aqueous solution containing CdCl2 · 2H2O and Na2S2O3 at 90 °C.
114 citations
TL;DR: In this article, the electronic structures of model interfaces of organic electroluminescent (EL) devices were investigated with UV photo-emission spectroscopy (UPS), and the authors found that the work function of metal electrode was changed by deposition of organic layer, indicating the invalidity of the traditional energy level alignment model where a common vacuum level was assumed at organic/metal interface.
Abstract: The electronic structures of model interfaces of organic electroluminescent (EL) devices were investigated with UV photoemission spectroscopy (UPS). Interfaces of TTN (tetrathianaphthacene) and TCNQ (tetracyanoquinodimethane) were also studied as extreme cases for hole transport and electron transport material, respectively. For all organic/metal interfaces studied, the work function of metal electrode was changed by deposition of organic layer, i.e., the vacuum level was shifted at the interface, indicating the invalidity of the traditional energy level alignment model where a common vacuum level was assumed at organic/metal interface. At TCNQ/Au, DP-NTCI/Al, which are acceptor/metal interfaces, upward shift of the vacuum level of organic layer relative to that of metal was observed, suggesting the formation of interfacial dipole due to electron-transfer from metal to acceptor. At other organic/metal interfaces, TPD(N, N'-diphenyl-N, N'-(3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine)/Au or ITO (indium tin oxide), ALq/sub 3/ (tris(8-hydroxyquinolino) aluminum)/Al, DP-NTCl(N, N'-diphenyl-1,4,5,8- naphthyltetracarboxylimide)/Al or Au, downward shift of the vacuum level was observed. Such downward shift has been also observed in our previous study for porphyrin/metal interfaces, and seems to be a trend for organic/metal interfaces at which no electron-transfer from metal to organic layer occurs. This trend suggests that the traditional model tends to underestimate (overestimate) the barrier height for hole (electron) injection. On the other hand, the vacuum level shift at ALq/sub 3//TPD interface was less than 0.1 eV, leading to an apparent applicability of the traditional model. However, it is not always the case for organic/organic interfaces: finite shift of 0.2 eV was observed at TTN/TCNQ interface due to electron-transfer from TTN to TCNQ. Possible origins of vacuum level shift at organic/metal interfaces were also discussed.
114 citations