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Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.


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Journal ArticleDOI
TL;DR: In this paper, high-temperature ferromagnetism is demonstrated in Mn-doped indium-tin oxide (ITO) films deposited using reactive thermal evaporation.
Abstract: High-temperature ferromagnetism is demonstrated in Mn-doped indium–tin oxide (ITO) films deposited using reactive thermal evaporation. These films were grown on sapphire (0001), Si∕SiO2 as well as Si (100) substrates with the highest magnetic moment observed around 0.8μB∕Mn in 5% Mn-doped ITO films. The electrical conduction is n type and the carrier concentration is ∼2.5×1019cm−3 for 5% Mn doping. An anomalous Hall effect is observed in magnetotransport measurements, showing that the charge carriers are spin polarized, revealing the magnetic interaction between itinerant electrons and localized Mn spins. The carrier concentration can be varied independent of the Mn concentration in this transparent ferromagnetic semiconductor for its easy integration into magneto-optoelectronic devices.

110 citations

Journal ArticleDOI
TL;DR: A simple and rapid pre-treatment washing method was proposed to reduce the thickness of PVP layer from 13.19 to 0.96 nm and improve the contact between wires, and the improved AgNWs were successfully employed in a capacitive pressure sensor with high transparency, sensitivity, and reproducibility.
Abstract: Transparent electrode based on silver nanowires (AgNWs) emerges as an outstanding alternative of indium tin oxide film especially for flexible electronics. However, the conductivity of AgNWs transparent electrode is still dramatically limited by the contact resistance between nanowires at high transmittance. Polyvinylpyrrolidone (PVP) layer adsorbed on the nanowire surface acts as an electrically insulating barrier at wire–wire junctions, and some devastating post-treatment methods are proposed to reduce or eliminate PVP layer, which usually limit the application of the substrates susceptible to heat or pressure and burden the fabrication with high-cost, time-consuming, or inefficient processes. In this work, a simple and rapid pre-treatment washing method was proposed to reduce the thickness of PVP layer from 13.19 to 0.96 nm and improve the contact between wires. AgNW electrodes with sheet resistances of 15.6 and 204 Ω sq−1 have been achieved at transmittances of 90 and 97.5 %, respectively. This method avoided any post-treatments and popularized the application of high-performance AgNW transparent electrode on more substrates. The improved AgNWs were successfully employed in a capacitive pressure sensor with high transparency, sensitivity, and reproducibility.

110 citations

Journal ArticleDOI
TL;DR: In this article, the fabrication and properties of indium tin oxide/p-Si single-crystal solar cells are described and the effect of temperature on device performance and spectral response are compared with the theory.
Abstract: We have reported on the theory of semiconductor‐insulator‐semiconductor (SIS) solar cells in a previous publication. In this paper, the fabrication and properties of indium tin oxide/p‐Si single‐crystal solar cells will be described. The ITO is deposited by the ion‐beam sputtering method. Best photovoltaic devices are obtained when the composition of indium tin oxide (ITO) is 91 mole% and 9 mole% SnO2. The device properties as a function of the ITO composition will be described. The thickness and the composition of the oxide‐silicon interface is critical for device performance. The existence of a thin interfacial layer is demonstrated by Auger spectroscopy. The effect of temperature on device performance and the spectral response are compared with the theory. The SIS model accurately matches the major trends observed in experimental nITO/p‐Si solar cells.

110 citations

Journal ArticleDOI
TL;DR: In this article, a large-area flexible organic photovoltaic (OPV) modules are fabricated successfully by gravure printing in air, using an industrial-scale printing proofer of similar performance to commercial roll-to-roll printing processes.

109 citations

Journal ArticleDOI
TL;DR: In this article, conditions for efficiency improvement and optimization in indium-tinoxide/pindium-selenide solar cells are discussed in terms of electrical and photovoltaic properties.
Abstract: Conditions for efficiency improvement and optimization in indium‐tin‐oxide/p‐indium‐selenide solar cells are discussed in this paper. This aim is achieved by using low‐resistivity p‐indium‐selenide and by incorporating a back‐surface‐field contact. This contact is insured by a p‐indium selenide/gold barrier whose rectifying behavior is explained through the complex impurity structure of p‐indium‐selenide. Electrical and photovoltaic properties of the cells are also reported. The efficiency parameters under AM1 simulated conditions have been improved up to 32 mA/cm2 for the short‐circuit current density, 0.58 V for the open‐circuit voltage, and 0.63 for the filling factor. As a result, solar efficiencies larger than 10% in annealed cells and 8% in unannealed ones have been attained. The limitations of these devices are discussed by investigating the dependence of electrical and efficiency parameters in function of photon flux and temperature.

109 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023343
2022730
2021537
2020684
2019804
2018838