Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

Abstract: This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at room temperature, the device exhibits a repeatable bipolar resistance switching behavior without an electroforming process and an excellent transmittance in the visible region. The conduction mechanisms for low and high resistance states are dominated by Ohm's law and space-charge-limited current behavior, respectively. In retention and endurance tests, a resistance ratio of more than 1 order remains after 10 4 s at 90°C and after 100 dc voltage sweeping cycles.

Photoconductivity of solution-processed MoS2 films

Abstract: Solution-exfoliated MoS2 nano-platelets were formed into thin films by deposition onto a water surface followed by transfer to indium tin oxide coated glass. After drying, a gold electrode was evaporated on top to give a sandwich structure with quasi-Ohmic contacts. Illumination of this device with broadband light of ∼1 kW m−2 intensity gave a fourfold increase in conductivity. The photocurrent increased sub-linearly with intensity and exponentially with time indicating the presence of traps. The photo-responsively at low intensity was ∼10−4 A per W at 15 V. This work demonstrates the potential for liquid-exfoliated, inorganic nanosheets to be fabricated into low-cost optoelectronic devices.

Indium Tin Oxide Plasma Frequency Dependence on Sheet Resistance and Surface Adlayers Determined by Reflectance FTIR Spectroscopy

Abstract: Variable angle reflectance FTIR spectroscopy was used to investigate the optical properties of indium tin oxide (ITO) and fluorine-doped tin oxide (SFO) thin films in the near-IR spectral region. T...

Exciton diffusion length in the organic semiconductor diindenoperylene

Abstract: The photovoltaic behavior of Schottky barrier devices consisting of a single diindenoperylene (DIP) layer sandwiched between an indium tin oxide and Ag electrode has been investigated. Correlating the spectral dependence of the photocurrent and the absorption coefficient, we estimated the exciton diffusion length in DIP to ∼100nm along the c′ direction. X-ray structural analysis yielded this length to be in agreement with the average crystallite size, thereby, revealing domain boundaries to be the limiting effect on the exciton transport. The corresponding exciton diffusion constant of 5×10−3cm2∕s resembles that of highly ordered single crystals of polyaromatic hydrocarbons.

A dual-scale metal nanowire network transparent conductor for highly efficient and flexible organic light emitting diodes

Abstract: Although solution processed metal nanowire (NW) percolation networks are a strong candidate to replace commercial indium tin oxide, their performance is limited in thin film device applications due to reduced effective electrical areas arising from the dimple structure and percolative voids that single size metal NW percolation networks inevitably possess. Here, we present a transparent electrode based on a dual-scale silver nanowire (AgNW) percolation network embedded in a flexible substrate to demonstrate a significant enhancement in the effective electrical area by filling the large percolative voids present in a long/thick AgNW network with short/thin AgNWs. As a proof of concept, the performance enhancement of a flexible phosphorescent OLED is demonstrated with the dual-scale AgNW percolation network compared to the previous mono-scale AgNWs. Moreover, we report that mechanical and oxidative robustness, which are critical for flexible OLEDs, are greatly increased by embedding the dual-scale AgNW network in a resin layer.