Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, a low-temperature two-step dipping method is proposed for the fabrication of CH3NH3PbI3-xClx perovskite films on the indium tin oxide glass/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) substrate.
Abstract: Solution-processable hybrid perovskite solar cells are a new member of next generation photovoltaics. In the present work, a low-temperature two-step dipping method is proposed for the fabrication of CH3NH3PbI3-xClx perovskite films on the indium tin oxide glass/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) substrate. The bandgaps of the CH3NH3PbI3-xClx perovskite films are tuned in the range between 1.54 and 1.59 eV by adjusting the PbCl2 mole fraction (nCl/(nCl + nI)) in the initial mixed precursor solution from 0.10 to 0.40. The maximum chlorine mole fraction measured by a unique potentiometric titration method in the produced CH3NH3PbI3-xClx films can be up to 0.220 ± 0.020 (x = 0.660 ± 0.060), which is much higher than that produced by a one-step spin-coating method (0.056 ± 0.015, x = 0.17 ± 0.04). The corresponding solar cell with the CH3NH3PbI2.34±0.06Cl0.66±0.06 perovskite film sandwiched between PEDOT:PSS and C60 layers exhibits a power conversion efficiency as high as 14.5%. Meanwhile, the open-circuit potential (Voc) of the device reaches 1.11 V, which is the highest Voc reported in the perovskite solar cells fabricated on PEDOT:PSS so far.
95 citations
TL;DR: The new mesoporous transparent conducting oxide based on indium-tin-oxide, meso-ITO, has been synthesized by a modified sol-gel method, using CTAB as the surfactant, demonstrating substantial framework conductivity and no hysteresis in the absorption-desorption isotherm.
Abstract: The new mesoporous transparent conducting oxide based on indium-tin-oxide, meso-ITO, has been synthesized by a modified sol-gel method, using CTAB as the surfactant. Critical was the employment of triethanolamine to control the rate of hydrolysis and inhibit deposition of the bulk oxides. Removal of the surfactant by calcination yielded a relatively well-ordered worm-hole motif arrangement of pores visible in the TEM and stable to 400 degrees C. BET measurements revealed no hysteresis in the absorption-desorption isotherm, consistent with a narrow pore-size distribution (between 20 and 40 A depending on the In:Sn ratio); surface areas ranged between 270 and 310 m2/g. This colorless material is the first mesoporous oxide exhibiting substantial framework conductivity, with a conductivity at 25 degrees C of 1.2 x 10-3 S/cm. This distinguishes it from mesoporous mixed-valence transition-metal oxides that exhibit weak hopping semiconductor behavior and much lower conductivity.
95 citations
TL;DR: In this article, the effect of post-deposition heat treatment on the electrical and optical properties of ITO films is investigated and several material parameters, such as the effective band gap and the refractive index, have been derived and discussed.
95 citations
TL;DR: In this article, the effects of a p-type NiO interfacial layer between indium tin oxide (ITO) and active layer were examined systematically to increase the efficiency and stability of OSCs.
95 citations
TL;DR: In this paper, the properties of indium tin oxide (ITO) thin films were analyzed in order to investigate its dependence on oxygen pressure, and rapid thermal annealing (RTA) temperature.
95 citations