scispace - formally typeset
Search or ask a question
Topic

Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the role of oxygen-plasma treatment of indium-tin oxide (ITO) anodes has been clearly understood and detailed studies of the surface and bulk of the ITO thin films exposed to oxygen plasmas were performed.

92 citations

Journal ArticleDOI
TL;DR: In this article, the authors evaluated the optical properties of ITO thin films on polyethylene napthalate (PEN) substrate in terms of the oxygen content and the surface morphology.
Abstract: Indium tin oxide (ITO) thin films, on polyethylene napthalate (PEN) of both good electrical and optical properties were obtained by radio-frequency sputtering. The optoelectronic properties of the ITO films on PEN substrate were evaluated in terms of the oxygen content and the surface morphology. Rutherford backscattering spectrometry analysis was used to determine the oxygen content in the film. Hall-effect measurements were used to evaluate the dependence of electrical properties on oxygen content. The results showed that the resistivity of the ITO film increases with increasing oxygen content. For an oxygen content of 1.6×1018–2.48×1018atoms∕cm2, the resistivity varied from 0.38×10−2to1.86×10−2Ωcm. Typical resistivities were about ∼10−3Ωcm. UV-Vis spectroscopy and atomic force microscopy measurements were used to determine the optical transmittance and surface roughness of ITO films, respectively. Optical transmittances of ∼85% were obtained for the ITO thin films. Our results revealed that substrate r...

92 citations

Journal ArticleDOI
TL;DR: ITO covered with 2 nm gold nanoislands and annealed at 500 °C for 1 min was investigated for its ability to detect the adsorption of biotinylated bovine serum albumin using local surface plasmon resonance (LSPR), and its subsequent molecular recognition of avidin.
Abstract: Mechanically, chemically and optically stable gold island films were prepared on indium tin oxide (ITO) substrates by direct thermal evaporation of thin gold films (2-6 nm) without the need for pre- or post-coating. The effect of mild thermal annealing (150 degrees C, 12 h) or short high temperature annealing (500 degrees C, 1 min) on the morphology of the gold nanostructures was investigated. ITO covered with 2 nm gold nanoislands and annealed at 500 degrees C for 1 min was investigated for its ability to detect the adsorption of biotinylated bovine serum albumin using local surface plasmon resonance (LSPR), and its subsequent molecular recognition of avidin.

92 citations

Journal ArticleDOI
TL;DR: In this article, enhanced light outcoupling from bottom emitting monochrome high-efficiency red, green, and blue organic light emitting diodes by adding silver layers on the indium tin oxide (ITO) anode was demonstrated.
Abstract: We demonstrate enhanced light outcoupling from bottom emitting monochrome high-efficiency red, green, and blue organic light emitting diodes by adding silver layers on the indium tin oxide (ITO) anode. The devices contain the phosphorescent emitting dyes tris(2-phenylpyridine)iridium and iridium(III)bis[2-methyldibenzo-(f, h)quinoxaline](acetylacetonate), and the blue singlet emitter 2,2′,7,7′-tetrakis 2,2-(diphenylvinyl)spiro-9,9′-bifluorene. We follow the p-i-n doping concept to increase the power efficiencies. We reach 81 lm/W for red, 101 lm/W for green, and 4.0 lm/W for blue color. These efficiencies are improved by up to a factor of 2.3 compared to standard ITO devices, which we attribute to microcavity amplification between the cathode and the Ag layer.

92 citations

Journal ArticleDOI
TL;DR: The atomic composition and electrical characteristics of the ALD-IGO film were controllable by adjusting the deposition supercycles, composed of InO and GaO subcycles, and could be employed to fabricate active layers for thin-film transistors to realize an optimum mobility.
Abstract: Indium gallium oxide (IGO) thin films were deposited via atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (InCA-1) and trimethylgallium (TMGa) as indium and gallium precursors, respectively, and hydrogen peroxide as the reactant. To clearly understand the mechanism of multicomponent ALD growth of oxide semiconductor materials, several variations in the precursor–reactant deposition cycles were evaluated. Gallium could be doped into the oxide film at 200 °C when accompanied by an InCA-1 pulse, and no growth of gallium oxide was observed without the simultaneous deposition of indium oxide. Density functional theory calculations for the initial adsorption of the precursors revealed that chemisorption of TMGa was kinetically hindered on hydroxylated SiOx but was spontaneous on a hydroxylated InOx surface. Moreover, the atomic composition and electrical characteristics, such as carrier concentration and resistivity, of the ALD-IGO film were controllable by adjusting th...

91 citations


Network Information
Related Topics (5)
Thin film
275.5K papers, 4.5M citations
95% related
Carbon nanotube
109K papers, 3.6M citations
93% related
Graphene
144.5K papers, 4.9M citations
93% related
Silicon
196K papers, 3M citations
91% related
Oxide
213.4K papers, 3.6M citations
91% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023343
2022730
2021537
2020684
2019804
2018838