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Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.


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Journal ArticleDOI
TL;DR: It is reported that tailoring of the energy level and electron transporting ability in oxide ECLs using Zn2SnO4 nanoparticles and quantum dots notably minimizes the loss of photogenerated electrons in the low-temperature-fabricated flexible PSC.
Abstract: Low-temperature-processed perovskite solar cells (PSCs), especially those fabricated on flexible substrates, exhibit device performance that is worse than that of high-temperature-processed PSCs. One of the main reasons for the inferior performance of low-temperature-processed PSCs is the loss of photogenerated electrons in the electron collection layer (ECL) or related interfaces, i.e., indium tin oxide/ECL and ECL/perovskite. Here, we report that tailoring of the energy level and electron transporting ability in oxide ECLs using Zn2SnO4 nanoparticles and quantum dots notably minimizes the loss of photogenerated electrons in the low-temperature-fabricated flexible PSC. The proposed ECL with methylammonium lead halide [MAPb(I0.9Br0.1)3] leads to fabrication of significantly improved flexible PSCs with steady-state power conversion efficiency of 16.0% under AM 1.5G illumination of 100 mW cm–2 intensity. These results provide an effective method for fabricating high-performance, low-temperature solution-pro...

90 citations

Journal ArticleDOI
24 Feb 2014-ACS Nano
TL;DR: The suggested approach provides a reliable and efficient light harvesting in a broad range of wavelength, which consequently enhances the performance of various organic solar cells.
Abstract: We report the effect of a nanobump assembly (NBA) constructed with molybdenum oxide (MoO3) covering Ag nanoparticles (NPs) under the active layer on the efficiency of plasmonic polymer solar cells. Here, the NPs with precisely controlled concentration and size have been generated by an atmospheric evaporation/condensation method and a differential mobility classification and then deposited on an indium tin oxide electrode via room temperature aerosol method. NBA structure is made by enclosing NPs with MoO3 layer via vacuum thermal evaporation to isolate the undulated active layer formed onto the underlying protruded NBA. Simulated scattering cross sections of the NBA structure reveal higher intensities with a strong forward scattering effect than those from the flat buffer cases. Experimental results of the device containing the NBA show 24% enhancement in short-circuit current density and 18% in power conversion efficiency compared to the device with the flat MoO3 without the NPs. The observed improvemen...

90 citations

Journal ArticleDOI
TL;DR: In this article, an ethoxysilane functionalized hole-transporting triphenylamine (TPA-CONH-silane) was synthesized and was self-assembled to form a monolayer on an indium tin oxide (ITO) anode.
Abstract: Modification of inorganic electrodes has attracted much attention in the study of organic semiconductor devices. An ethoxysilane functionalized hole-transporting triphenylamine (TPA–CONH–silane) was synthesized and was self-assembled to form a monolayer on an indium tin oxide (ITO) anode. The modified surface was characterized by water contact angle, X-ray photoelectron spectroscopy (XPS), ellipsometry and atomic force microscopy (AFM). The increase in surface work function is expected to facilitate hole injection from the ITO anode. To investigate the effect of a self-assembled monolayer (SAM) on the characteristics an organic light-emitting diode (OLED), a typical OLED device [SAM-modified ITO/TPD (50 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (70 nm)] was fabricated. The SAM-modified device could endure a higher current and showed a much higher luminance (6300 cd m−2) than the bare ITO device (2700 cd m−2). The external quantum efficiency was also shown to improve as a result of the presence of the SAM. In addition to these device characteristics, a study of the TPD film morphology revealed an enhanced thermal stability for the SAM-modified device. The variation of the terminal group of the SAM and possible further optimization of SAM-modified OLEDs is under investigation.

90 citations

Journal ArticleDOI
TL;DR: This work reports on the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband, on-plasmon-resonance optical pumping, which enables modulation of the full-visible spectrum with large absolute change of transmission, favourable spectral tunability and beam-steering capability.
Abstract: Nonlinear optical responses of materials play a vital role for the development of active nanophotonic and plasmonic devices. Optical nonlinearity induced by intense optical excitation of mobile electrons in metallic nanostructures can provide large-amplitude, dynamic tuning of their electromagnetic response, which is potentially useful for all-optical processing of information and dynamic beam control. Here we report on the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband, on-plasmon-resonance optical pumping, which enables modulation of the full-visible spectrum with large absolute change of transmission, favourable spectral tunability and beam-steering capability. Furthermore, we observe a transient response in the microsecond regime associated with slow lattice cooling, which arises from the large aspect-ratio and low thermal conductivity of ITO-NRAs. Our results demonstrate that all-optical control of light can be achieved by using heavily doped wide-bandgap semiconductors in their transparent regime with speed faster than that of noble metals. Optical nonlinearity in metallic nanostructures has been exploited for all-optical signal switching. Here, Guo et al. report on the optical nonlinearity of indium tin oxide nanorod arrays in the dielectric range induced by pumping in the metallic range, enabling modulation of the full-visible spectrum.

90 citations

Journal ArticleDOI
TL;DR: ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film).
Abstract: ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

90 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023343
2022730
2021537
2020684
2019804
2018838