Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Methods for manufacturing solid state ionic devices

Abstract: A multilayer, thin film solid state ionic device usable as an electrochromic window and/or as a rechargeable battery and a method for its manufacture. In one embodiment, the device comprises a transparent substrate and a thin film, five layered coating, the coating being deposited onto the substrate. The device is made by depositing a first layer of indium tin oxide onto the substrate, depositing a second layer of tungsten trioxide onto the first layer, inserting a quantity of lithium ions into the second layer so as to form a lithium-enriched second layer, depositing a third layer of lithium niobate onto the lithium-enriched second layer, sputter depositing a fourth layer of LiCoO 2 onto the third layer, whereby the fourth layer is lithium-deficient, applying, in the presence of a plasma, a sufficiently large positive electrical potential to the second layer so as to cause virtually all of the lithium ions inserted thereinto to be expelled therefrom, whereby a quantity of lithium ions are added to the fourth layer to ameliorate its lithium deficiency and whereby any lithium ions expelled from the second layer but not needed to cure the deficiency of lithium ions in the fourth layer are expelled into the plasma, and then depositing a fifth layer made of indium oxide onto said fourth layer.

Dip-coating of ITO films

Abstract: Uniform, transparent indium tin oxide (ITO) films were prepared by dip-coating process using an organic sol composed of indium acetate—diethanolamine—tin octylate-n-propanol mixture and the relationship between their electrical properties, film morphology and dip-coating conditions have been investigated. The optimum Sn-doping concentration was about 4 mol% relative to In ion. The conductivity of as-prepared ITO films increased with an increase in firing temperature. Multiple coating of the layers as thin as a few tens of nanometers accelerated the growth of the ITO crystals and increased the conductivity of formed films. Thus, ITO films with a resistivity of 4 × 10−4 Ω cm could be obtained by dip-coating and by subsequent post annealing in nitrogen. Through this study we conclude that the conductivity of dip-coated films was mainly controlled by the crystallite size and, hence, by carrier mobility.

Coaxial RuO2–ITO Nanopillars for Transparent Supercapacitor Application

Abstract: Supercapacitive properties of ruthenium oxide (RuO2) nanoparticles electrodeposited onto the indium tin oxide (ITO) nanopillars were investigated. Compared to conventional planar current collectors...

Bendable Solar Cells from Stable, Flexible, and Transparent Conducting Electrodes Fabricated Using a Nitrogen-Doped Ultrathin Copper Film

Abstract: Copper has attracted significant interests as an abundant and low-cost alternative material for flexible transparent conducting electrodes (FTCEs). However, Cu-based FTCEs still present unsolved technical issues, such as their inferior light transmittance and oxidation durability compared to conventional indium tin oxide (ITO) and silver metal electrodes. This study reports a novel technique for fabricating highly efficient FTCEs composed of a copper ultrathin film sandwiched between zinc oxides, with enhanced transparency and antioxidation performances. A completely continuous and smooth copper ultrathin film is fabricated by a simple room-temperature reactive sputtering process involving controlled nitrogen doping (<1%) due to a dramatic improvement in the wettability of copper on zinc oxide surfaces. The electrode based on the nitrogen-doped copper film exhibits an optimized average transmittance of 84% over a spectral range of 380 −1000 nm and a sheet resistance lower than 20 Ω sq−1, with no electrical degradation after exposure to strong oxidation conditions for 760 h. Remarkably, a flexible organic solar cell based on the present Cu-based FTCE achieves a power conversion efficiency of 7.1%, clearly exceeding that (6.6%) of solar cells utilizing the conventional ITO film, and this excellent performance is maintained even in almost completely bent configurations.