Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
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TL;DR: It is shown that the molecular dipole moment of the phenol correlates strongly with the measured ITO work function change; no such correlation exists between the acidity of the Phenol and this measured change in work function, consistent with an electrostatic model and not with one involving electronegativities of the ligated phenoxide oxygens.
Abstract: Indium tin oxide (ITO) reacts with tetra(tert-butoxy)tin to give surface bound alkoxytin species. Ligand exchange occurs in these surface bound species by reaction with substituted phenols. The speciation of surface phenoxides was measured in ultrahigh vacuum by X-ray photoelectron spectroscopy, as was the work function for the surface modified ITO. It is shown that the molecular dipole moment of the phenol correlates strongly with the measured ITO work function change; no such correlation exists between the acidity of the phenol and this measured change in work function. Results are consistent therefore with an electrostatic model and not with one involving electronegativities of the ligated phenoxide oxygens.
88 citations
Patent•
10 Oct 1991
TL;DR: A multilayer antireflection coating designed for deposition in in-line coating machines by DC reactive sputtering is described in this paper, where half of the total thickness of the coating may be formed from zinc oxide which has a high sputtering rate.
Abstract: A multilayer antireflection coating designed for deposition in in-line coating machines by DC reactive sputtering. About half of the total thickness of the coating may be formed from zinc oxide which has a high sputtering rate. Conductive transparent materials including aluminum doped zinc oxide, antimony doped tin oxide, cadmium tin oxide, and indium tin oxide may be included in the coating.
88 citations
TL;DR: A conjugated copolymer of 9,9-didodecylfluorene and 4-triphenylamino-2,6-bis(phenyl)pyridine (F12TPN), containing both electron donor and acceptor moieties, was synthesized via Suzuki coupling polymerization.
Abstract: A conjugated copolymer of 9,9-didodecylfluorene and 4-triphenylamino-2,6-bis(phenyl)pyridine (F12TPN), containing both electron donor and acceptor moieties, was synthesized via Suzuki coupling polymerization. Polymer memory devices, based on thin films of F12TPN and its carbon nanotube composites, were fabricated. The current density-voltage characteristics of the indium tin oxide (ITO)/F12TPN/Al sandwich structure could be switched from a low conductivity (off) state to a high conductivity (on) state, when operated under negative bias with ITO as the anode. The switch-on voltage of the as-fabricated device was around −2.3V. The on/off state current ratio was about 10. The on/off state current ratio could be enhanced to 105 and the switch-on voltage reduced to about −1.7V by doping the F12TPN layer with about 1wt% of carbon nanotubes. Once the memory devices had been switched on, they could not be erased (switched off) with a reverse bias (positive bias). Thus the memory effect was characteristics of that of a write-once read-many-times memory. The memory mechanism was deduced from molecular simulation and modeling of the nature of currents in both states.
88 citations
TL;DR: The advent of crystallinity affects the electrical properties of the ZITO film, and the effect is ascribed to the boundaries between phases in the films.
Abstract: Zinc−indium−tin oxide (ZITO) films are grown by pulsed-laser deposition in which 30% of the indium in the In2O3 structure is replaced by substitution with zinc and tin in equal molar proportions: In2−2xZnxSnxO3, where x = 0.3. Films grown at 25 and 100 °C exhibit electron diffraction patterns (EDPs) typical of amorphous materials. At a deposition temperature of 200 °C, evidence of crystallinity begins to appear in the EDP data and becomes more evident in films deposited at 400 °C. The advent of crystallinity affects the electrical properties of the ZITO film, and the effect is ascribed to the boundaries between phases in the films. The electrical and optical properties of the amorphous ZITO films grown at 25 °C are dependent on the oxygen partial pressure (PO2) during film growth, transitioning from a high-mobility (36 cm2/V·s) conductor (σ ∼1700 S/cm) at PO2 = 5 mTorr to a high-mobility semiconductor at PO2 ≈ 20 mTorr. Field-effect transistors (FETs) prepared with as-deposited amorphous ZITO channel laye...
88 citations
TL;DR: In this article, the morphological, electrochemical, spectroelectrochemical characterization, and electrochromic device properties of poly(2,2‘-[10-methyl-3,7-phenothiazylene]-6,6‘-bis[4-phenylquinoline]) (PPTZPQ) were described.
Abstract: We describe the morphological, electrochemical, spectroelectrochemical characterization, and electrochromic device properties of films of poly(2,2‘-[10-methyl-3,7-phenothiazylene]-6,6‘-bis[4-phenylquinoline]) (PPTZPQ). Cyclic voltammograms of PPTZPQ polymer films showed reversible electrochemical oxidation accompanied with a color change that was switchable as a function of the potential. However, the reduction behavior of PPTZPQ was unstable and caused a loss of the electrochromic effect. The spectroelectrochemical behavior of PPTZPQ was interpreted as the combination of the properties of the constituent donor and acceptor moieties. Two PPTZPQ solid-state electrochromic devices were constructed using indium tin oxide (ITO) deposited on polyester and poly(ethylene oxide) as a polymeric electrolyte. The electrochromic active materials were PPTZPQ as the primary electrode and ladder poly(benzobisimidazobenzophenanthroline) (BBL) or vanadium pentoxide (V2O5) as the secondary electrode. The PPTZPQ−BBL and PPT...
88 citations