Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films.

Abstract: Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

Stabilization of the work function of indium tin oxide using organic surface modifiers in organic light-emitting diodes

Abstract: We herein report on the performance and improved stability of organic light-emitting diodes (OLEDs) in which the transparent indium tin oxide (ITO) electrode is modified using organic surface modifiers based on phosphonic acid anchoring groups. In contrast to air plasma treatment, a commonly used technique to increase the work function of ITO, treatment of the ITO surface with a partially fluorinated phosphonic acid results in a comparable change in work function but with a higher stability over time. The resultant lifetime of OLEDs also increased when this phosphonic acid modified ITO was used.

Preparation and Crystallization of Tin-doped and Undoped Amorphous Indium Oxide Films Deposited by Sputtering

Abstract: Tin-doped and undoped amorphous indium oxide films were prepared by dc magnetron sputtering without substrate heating at relatively high total gas pressures and relatively large target-substrate distance. The structural and electrical properties of these films were investigated by X-ray diffraction and Hall-effect measurements. The amorphous tin-doped indium oxide (a-ITO) films were crystallized at a temperature about 30°C higher than that for amorphous indium oxide (a-IO) films.

Emission enhancement in single-layer conjugated polymer microcavities

Abstract: We have studied the luminescence properties of microcavities which are formed by a single layer of poly(para‐phenylenevinylene) sandwiched between a dielectric mirror coated with a conducting indium tin oxide layer and a semitransparent metal electrode. Compared with a device without cavity structure, the spectral and spatial emission are significantly narrowed, and the forward emission intensity is enhanced. We measure a spectral linewidth (full width at half maximum) of the cavity modes of about 4 nm in photoluminescence and 20 nm in electroluminescence and an enhancement of luminescence intensity in the forward direction of more than an order of magnitude. The implications of the narrowing of the emission and possible transfer mechanisms for excitation energy are discussed.

High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide

Abstract: Observation of high temperature ferromagnetism in Ni-doped In2O3 and indium-tin-oxide (ITO) samples prepared by a solid state synthesis route is reported. Both Ni-doped compounds showed a clear ferromagnetism above 300K with the magnetic moments of 0.03–0.06μB∕Ni and 0.1μB∕Ni at 300 and 10K, respectively. Ni-doped In2O3 samples showed a typical semiconducting behavior with a room temperature resistivity of ρ∼2Ωcm, while Ni-doped ITO samples were metallic with ρ∼2×10−2Ωcm. Analysis of different conduction mechanisms suggested that variable range hopping model explains our ρ-T data for the Ni-doped In2O3 sample the best.