Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Highly Bendable and Durable Transparent Electromagnetic Interference Shielding Film Prepared by Wet Sintering of Silver Nanowires

Abstract: Electromagnetic (EM) wave emissions from wearable or flexible smart display devices can cause product malfunction and have a detrimental effect on human health. Therefore, EM shielding strategies are becoming increasingly necessary. Consequently, herein, we prepared a transparent acrylic polymer-coated/reduced graphene oxide/silver nanowire (Ag NW) (A/RGO/SANW) EM interference (EMI) shielding film via liquid-to-vapor pressure-assisted wet sintering. The film exhibited enhanced Ag NW network formation and antireflection (AR) effects. The wet-sintered Ag NW shielding film had a threshold radius of curvature (ROC) of 0.31 mm at a film thickness of 100 μm, demonstrating its high flexibility, whereas the conventional indium tin oxide (ITO) shielding film had a threshold ROC of ∼5 mm. The EMI shielding effectiveness (SE) of the A/RGO/SANW multilayer film was approximately twice that of the ITO film at a similar relative transmittance (84–85%). The optical relative reflectance of the Ag NW layer was reduced due ...

Efficient electron‐beam‐deposited ITO/n‐Si solar cells

Abstract: Indium tin oxide/silicon heterojunction solar cells with power conversion efficiencies of 10% in AM1 solar spectrum were fabricated. The indium tin oxide (ITO) films were deposited onto n‐type silicon by electron‐beam evaporation of a mixture of 90 : 10 molar% In2O3 : SnO2 powder. As in SnO2/n‐Si cells, the efficiencies of these cells depend upon the angle of incidence of the ITO vapor stream to silicon. We have found the photovoltaic properties of these cells to be very similar to those of SnO2/n‐Si devices.

Visible and infrared rare-earth-activated electroluminescence from indium tin oxide schottky diodes to gan:er on si

Abstract: Visible and infrared rare-earth-activated electroluminescence (EL) has been obtained from Schottky barrier diodes consisting of indium tin oxide (ITO) contacts on an Er-doped GaN layer grown on Si. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources for Ga, Mg, and Er and a plasma source for N2. RF-sputtered ITO was used for both diode electrodes. The EL spectrum shows two peaks at 537 and 558 nm along with several peaks clustered around 1550 nm. These emission lines correspond to atomic Er transitions to the 4I15/2 ground level and have narrow linewidths. The optical power varies linearly with reverse bias current. The external quantum and power efficiencies of GaN:Er visible light-emitting diodes have been measured, with values of 0.026% and 0.001%, respectively. Significantly higher performance is expected from improvements in the growth process, device design, and packaging.

Sulfamic Acid-Catalyzed Lead Perovskite Formation for Solar Cell Fabrication on Glass or Plastic Substrates.

Abstract: Lead perovskite materials such as methylammonium triiodoplumbate(II) (CH3NH3PbI3, PV) are promising materials for printable solar cell (SC) applications. The preparation of PV involves a series of energetically costly cleavages of the μ-iodo bridges via conversion of a mixture of PbI2 (PI) and methylammonium iodide (CH3NH3I, MAI) in N,N-dimethylformamide (DMF) into a precursor solution containing a polymeric strip of a plumbate(II) dimer [(MA+)2(PbI3–)2·(DMF)2]m, which then produces a perovskite film with loss of DMF upon spin-coating and heating of the substrate. We report here that the PI-to-PV conversion and the PV crystal growth to micrometer size can be accelerated by a small amount of zwitterionic sulfamic acid (NH3SO3, SA) and that sulfamic acid facilitates electron transfer to a neighboring electron-accepting layer in an SC device. As a result, an SC device on indium tin oxide (ITO)/glass made of a 320 nm thick PV film using 0.7 wt % SA showed a higher short-circuit current, open-circuit voltage, ...

Method for fabricating thin film transistor array substrate for liquid crystal display

Abstract: A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered structure with a lower layer exhibiting good contact characteristics with respect to indium tin oxide, and an upper layer exhibiting low resistance characteristics. A gate insulating layer, a semiconductor layer, a contact layer, and first and second data line layers are sequentially deposited onto the substrate with the gate line assembly. The first and second data line layers are patterned to form a data line assembly, and the contact layer is etched through the pattern of the data line assembly such that the contact layer has the same pattern as the data line assembly. A passivation layer is deposited onto the data line assembly, and a photoresist pattern is formed on the passivation layer by using a mask of different light transmissties mainly at a display area and a peripheral area. The passivation layer and the underlying layers are etched through the photoresist pattern to form a semiconductor pattern and contact windows. A pixel electrode, a supplemental gate pad and a supplemental data pad are then formed of indium tin oxide or indium zinc oxide. The gate and data line assemblies may be formed with a single layered structure. A black matrix and a color filter may be formed at the structured substrate before forming the pixel electrode, and an opening portion may be formed between the pixel electrode and the data line to prevent possible short circuits.