Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Green fluorescent organic light-emitting device with external quantum efficiency of nearly 10%

Abstract: Green fluorescent organic light-emitting device (OLED) exhibiting a high external quantum efficiency of nearly 10% has been developed. The OLED consists of simple three organic layers, using NPB, 0.8% C545T doped TPBA, and DBzA as a hole-transporting layer, an emitting layer, and an electron-transporting layer, respectively, [fluorocarbon coated indium tin oxide/NPB (60 nm)/08% C545T doped TPBA (40 nm)/DBzA (20 nm)/LiF (1 nm/Al], where NPB is 4,4′-bis (N-phenyl-1-naphthylamino)biphenyl, C545T is 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-benzo[l]pyrano[6 7 8-ij]quinolizin-11-one, TPBA is 9,9′,10,10′-tetraphenyl-2,2′-bianthracene, and DBzA is 9,10-bis[4-(6-methylbenzothiazol-2-yl)phenyl]anthracene. The high external quantum efficiency is maintained in the wide range of current density of 2–100 mA∕cm2. The current efficiency and power efficiency of the OLED are also very high, 29.8 cd/A and 26.2 lm/W, respectively, at a current density of 20 mA/cm2. The OLED is promising for prac...

Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition

Abstract: Highly electrically conductive indium–tin–oxide thin films were epitaxially grown on an extremely flat (100) surface of yttria-stabilized zirconia single-crystal substrates at a substrate temperature of 600 °C by a pulsed-laser deposition technique. A resistivity down to 7.7×10−5 Ω cm was reproducibly obtained, maintaining optical transmission exceeding 85% at wavelengths from 340 to 780 nm. The carrier densities of the films were enhanced up to 1.9×1021 cm−3, while the Hall mobility showed a slight, almost linear, decrease from 55 to 40 cm2 V−1 s−1 with increasing SnO2 concentration. The low resistivity is most likely the result of the good crystal quality of the films.

Hydrogen-Incorporated TiS2 Ultrathin Nanosheets with Ultrahigh Conductivity for Stamp-Transferrable Electrodes

Abstract: As a conceptually new class of two-dimensional (2D) materials, the ultrathin nanosheets as inorganic graphene analogues (IGAs) play an increasingly vital role in the new-generation electronics. However, the relatively low electrical conductivity of inorganic ultrathin nanosheets in current stage significantly hampered their conducting electrode applications in constructing nanodevices. We developed the unprecedentedly high electrical conductivity in inorganic ultrathin nanosheets. The hydric titanium disulfide (HTS) ultrathin nanosheets, as a new IGAs, exhibit the exclusively high electrical conductivity of 6.76 × 104 S/m at room temperature, which is superior to indium tin oxide (1.9 × 104 S/m), recording the best value in the solution assembled 2D thin films of both graphene (5.5 × 104 S/m) and inorganic graphene analogues (5.0 × 102 S/m). The modified hydrogen on S–Ti–S layers contributes additional electrons to the TiS2 layered frameworks, rendering the controllable electrical conductivity as well as ...

Indium tin oxide contacts to gallium nitride optoelectronic devices

Abstract: We have fabricated GaN-based light-emitting diodes using transparent indium tin oxide (ITO) p contacts. ITO-contacted devices required an additional 2 V to drive 10 mA, as compared to similar devices with metal contacts. However, ITO has lower optical absorption at 420 nm (α=664 cm−1) than commonly used thin metal films (α=3×105 cm−1). Uniform luminescence was observed in ITO-contacted devices, indicating effective hole injection and current spreading.

Using Self‐Assembling Dipole Molecules to Improve Charge Collection in Molecular Solar Cells

Abstract: Surface modification of indium tin oxide (ITO)-coated substrates through the use of self-assembled monolayers (SAMs) of molecules with permanent dipole moments has been used to control the anode work function and device performance in molecular solar cells based on a CuPc:C60 (CuPc: copper phthalocyanine) heterojunction. Use of SAMs increases both the short-circuit current density (Jsc) and fill factor, increasing the power-conversion efficiency by up to an order of magnitude. This improvement is attributed primarily to an enhanced interfacial charge transfer rate at the anode, due to both a decrease in the interfacial energy step between the anode work function and the highest occupied molecular orbital (HOMO) level of the organic layer, and a better compatibility of the SAM-modified electrodes with the initial CuPc layers, which leads to a higher density of active sites for charge transfer. An additional factor may be the influence of increasing electric field at the heterojunction on the exciton-dissociation efficiency. This is supported by calculations of the electric potential distribution for the structures. Work-function modification has virtually no effect on the open-circuit voltage (Voc), in accordance with the idea that Voc is controlled primarily by the energy levels of the donor and acceptor materials.