Topic
Indium tin oxide
About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this paper, the authors demonstrate ultrafast plasmon modulation in the near-infrared (NIR) to mid infrared (MIR) range by intraband pumping of indium tin oxide nanorod arrays (ITO-NRAs).
Abstract: All-optical control of plasmons can enable optical switches with high speeds, small footprints and high on/off ratios. Here we demonstrate ultrafast plasmon modulation in the near-infrared (NIR) to mid-infrared (MIR) range by intraband pumping of indium tin oxide nanorod arrays (ITO-NRAs). We observe redshifts of localized surface plasmon resonances arising from a change of the plasma frequency of ITO, which is governed by the conduction band non-parabolicity. We generalize the plasma frequency for non-parabolic bands, quantitatively model the fluence-dependent plasma frequency shifts, and show that different from noble metals, the lower electron density in ITO enables a remarkable change of electron distributions, yielding a significant plasma frequency modulation and concomitant large transient bleaches and induced absorptions, which can be tuned spectrally by tailoring the ITO-NRA geometry. The low electron heat capacity explains the sub-picosecond kinetics that is much faster than noble metals. Our work demonstrates a new scheme to control infrared plasmons for optical switching, telecommunications and sensing. Ultrafast plasmon modulation has been realized in the near- to mid-infrared range by intraband pumping of indium tin oxide nanorod arrays.
249 citations
••
TL;DR: Narrowband photodetectors are designed, which operate in the broadband regime upon bottom illumination and in the narrowband regime upon top illumination (from the air/perovskite side) and show high external quantum efficiency.
Abstract: Photodetectors are designed, which operate in the broadband regime upon bottom illumination (from the indium tin oxide (ITO) side) and in the narrowband regime upon top illumination (from the air/perovskite side). The narrowband photodetectors show high external quantum efficiency of above 104 %. The operational spectrum of the photodetectors can also be tuned by adjusting the halide composition in the active material.
248 citations
••
TL;DR: In this paper, the formation of ordered TiO2 nanotube arrays was affected by the electrolyte temperature and the applied anodization potential, while little effect from the electrolytes temperature was observed.
Abstract: Highly ordered TiO2 nanotube arrays were fabricated via electrochemical anodization of high purity Ti foil and Ti thin film coated indium tin oxide (ITO) glass in fluorine containing electrolytes (both aqueous and nonaqueous). The formation of ordered TiO2 nanotube arrays was affected by the electrolyte temperature and the applied anodization potential. In aqueous electrolyte, the anodization potential exerted significant influence on the formation of TiO2 nanotube arrays, while little effect from the electrolyte temperature was observed. In nonaqueous electrolyte, the electrolyte temperature markedly affected the TiO2 nanotube dimensions, while the anodization potential exhibited slight influence in this regard. As a consequence, TiO2 nanotube arrays with tube diameters ranging from 20 to 90 nm and film thicknesses ranging from several hundred nanometers to several micrometers were obtained. The TiO2 nanostructures were examined by scanning electron microscopy. Thermal annealing on the anodized Ti induce...
247 citations
••
TL;DR: In this article, the effects of substrate temperature on the properties of ZnO films were investigated and the crystalline, electrical and optical properties of the films were found to depend directly on substrate temperature during deposition.
Abstract: Highly conductive and transparent aluminum- and gallium-doped zinc oxide (ZnO:Al and ZnO:Ga) thin films in place of indium tin oxide films have been prepared by using XeCl excimer laser ablation at relatively low temperatures. The impurity content of Al or Ga in the ZnO target was optimized on the basis of the measurements of resistivity, carrier concentration, and Hall mobility of the deposited transparent conducting ZnO films. The effects of substrate temperature on the properties of ZnO films were investigated. The crystalline, electrical and optical properties of the films were found to depend directly on substrate temperature during deposition. The minimum resistivity of 1.4×10−4 Ω cm was obtained for the ZnO:Al film prepared at a substrate temperature of 300 °C using a ZnO target with an Al2O3 content of 1% by weight (wt %). Moreover, the ZnO:Al film prepared at a substrate temperature of 100 °C showed a low resistivity value of 2.5×10−4 Ω cm. As for the ZnO:Ga film, on the other hand, the minimum r...
247 citations
••
TL;DR: In this paper, the state-of-the-art developments and future prospects of transparent conductive films (TCFs) synthesized using Graphene oxide (GO) suspension are reviewed.
247 citations