Indium tin oxide

About: Indium tin oxide is a research topic. Over the lifetime, 17857 publications have been published within this topic receiving 402127 citations. The topic is also known as: indium tin oxide.

Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode

Abstract: An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices.

High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.

Abstract: Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn4Sn4O15, grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator. This structurally dense-packed semiconductor composition with minimal Zn2+ incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron mobilities of ∼90 cm2 V−1 s−1 (104 cm2 V−1 s−1 maximum obtained for patterned ZITO films), with Ion/Ioff ratio ∼105, a subthreshhold swing of ∼0.2 V/dec, and operating voltage <2 V for patterned devices with W/L = 50. The microstructural and electronic properties of ZITO semiconductor film compositions in the range Zn9−2xInxSnxO9+1.5x (x = 1−4) and ZnIn8−xSnxO13+0.5x (x = 1−7) were systematically investigated to elucidate those factors which yield optimum mobility, Ion/Ioff, and threshold voltage parameters. It is shown tha...

Highly Efficient Electroluminescence from Green‐Light‐Emitting Electrochemical Cells Based on CuI Complexes

Abstract: The complexes [Cu(dnpb)(DPEphos)](+)(X-) (dnpb and DPEphos are 2,9-di-n-butyl-1,10-phenanthroline and bis[2-(diphenyl-phosphino)phenyl]ether, respectively, and X- is BF4-, ClO4-, or PF6-) can form high quality films with photoluminescence quantum yields of up to 71 +/- 7% Their electroluminescent properties are studied using the device-structure indium tin oxide (ITO)/complex/metal cathiode The devices emit green light efficiently, with an emission maximum of 523 nm, and work in the mode of light-emitting electrochemical cells The response time of the devices greatly depends on the driving voltage, the counterions, and the thickness of the complex film After pre-biasing at 25 V for 40 s, the devices turn on instantly, with a turn-on voltage of ca 29 V A current efficiency of 56 cd A(-1) and an external quantum efficiency of 16% are realised with Al as the cathode Using a low-work-function metal as the cathode can significantly enhance the brightness of the device almost without affecting the turn-on voltage and current efficiency With a Ca cathode, a brightness of 150 cd m(-2) at 6 V and 4100 cd m(-2) at 25 V is demonstrated The electroluminescent performance of these types of complexes is among the best so far for transition metal complexes with counterions

Broadband metamaterial for optical transparency and microwave absorption

Abstract: We present a metamaterial for simultaneous optical transparency and microwave absorption in broadband, which can be used as an optically transparent radar-wave absorber. The proposed metamaterial absorber is made of windmill-shaped elements with the reflection spectra featured by three absorption bands. By properly tailoring the resonances of the structure, we achieve the optimized metamaterial absorptivity that is greater than 90% from 8.3 to 17.4 GHz. In the meantime, excellent optical transmittance is achieved by use of the indium tin oxide (ITO) film with moderate surface resistance, implying that the optical properties of the metamaterial are hardly affected by the periodic meta-atoms. Both numerical simulations and experimental results demonstrate the good performance of the proposed metamaterial, thereby enabling a wide range of applications such as ultrathin detectors and photovoltaic solar cells in the future.